My Quote Request
No products added yet
5961-00-068-6448
20 Products
1850-0192
TRANSISTOR
NSN, MFG P/N
5961000686448
NSN
5961-00-068-6448
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4882 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO
Related Searches:
525007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686441
NSN
5961-00-068-6441
MFG
PIONEER MAGNETICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
C2852
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686441
NSN
5961-00-068-6441
MFG
HOWELL INSTRUMENTS INC .
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
RC133517
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686441
NSN
5961-00-068-6441
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.30 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N3614
TRANSISTOR
NSN, MFG P/N
5961000686448
NSN
5961-00-068-6448
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4882 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO
Related Searches:
2N3614A
TRANSISTOR
NSN, MFG P/N
5961000686448
NSN
5961-00-068-6448
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4882 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO
Related Searches:
9510-0002
TRANSISTOR
NSN, MFG P/N
5961000686448
NSN
5961-00-068-6448
MFG
ELGENCO INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM BASE CURRENT, DC AND 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE4882 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO
Related Searches:
TN60
TRANSISTOR
NSN, MFG P/N
5961000686465
NSN
5961-00-068-6465
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
1N4816
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686466
NSN
5961-00-068-6466
MFG
THALES COMMUNICATIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/286
OVERALL DIAMETER: 0.065 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
TN62
TRANSISTOR
NSN, MFG P/N
5961000686469
NSN
5961-00-068-6469
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.188 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
189420
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686824
NSN
5961-00-068-6824
MFG
EDO
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.180 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
C45M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686824
NSN
5961-00-068-6824
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.180 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
CD1488
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686829
NSN
5961-00-068-6829
MFG
TELCOM SEMICONDUCTOR INC
Description
DESIGN CONTROL REFERENCE: CD1488
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 15818
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.270 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
PRS6125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686831
NSN
5961-00-068-6831
MFG
DIODES INC
Description
DESIGN CONTROL REFERENCE: PRS6125
MANUFACTURERS CODE: 51182
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
Related Searches:
1N3255
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
MFG
INTERSIL CORPORATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3255 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
225267
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
MFG
RCA CORP DISTRIBUTOR AND SPECIAL PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3255 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
353-3276-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
353-3276-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3255 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
353-3276-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
353-3276-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3255 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
5025-850
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000686953
NSN
5961-00-068-6953
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
NONDEFINITIVE SPEC/STD DATA: 1N3255 TYPE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
361473-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000687090
NSN
5961-00-068-7090
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 10 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE AND 15.00 MILLIAMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE
INTERNAL JUNCTION CONFIGURATION: PN ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7 ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.096 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.265 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE
