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5961-00-355-9580

20 Products

965487

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559580

NSN

5961-00-355-9580

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965487

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559580

NSN

5961-00-355-9580

MFG

THALES TRAINING & SIMULATION LTD

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

SHQ1917H

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003554793

NSN

5961-00-355-4793

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SHQ1917H

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003554793

NSN

5961-00-355-4793

MFG

FREESCALE SEMICONDUCTOR INC.

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE OPTION GOLD
INCLOSURE MATERIAL: METAL AND PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.180 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.100 INCHES MINIMUM AND 0.155 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 07187-4006583 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MA

C151N

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961003555273

NSN

5961-00-355-5273

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C151N

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961003555273

NSN

5961-00-355-5273

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

DESIGN CONTROL REFERENCE: C151N
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 31637
OVERALL HEIGHT: 0.874 INCHES MINIMUM AND 1.030 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.049 INCHES MINIMUM AND 1.062 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 4 THREADED STUD,WIRE LEAD TERMINALS
THE MANUFACTURERS DATA:

0A200

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559540

NSN

5961-00-355-9540

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0A200

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559540

NSN

5961-00-355-9540

MFG

VISHAY

Description

CAPACITANCE RATING IN PICOFARADS: 1.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 160.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

968071

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559540

NSN

5961-00-355-9540

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968071

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559540

NSN

5961-00-355-9540

MFG

THALES TRAINING & SIMULATION LTD

Description

CAPACITANCE RATING IN PICOFARADS: 1.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 160.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

BZY88-C3V9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559580

NSN

5961-00-355-9580

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BZY88-C3V9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559580

NSN

5961-00-355-9580

MFG

MULLARD INC

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

BZY88C3V9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559580

NSN

5961-00-355-9580

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BZY88C3V9

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003559580

NSN

5961-00-355-9580

MFG

PHILIPS ELECTRONICS NEDERLAND BV

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

04-4012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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04-4012

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

HUNTRON INC DBA HUNTRON INSTRUMENTS

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

16102-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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16102-011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

DYNALEC CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1946577A1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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1946577A1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

ELSAG BAILEY INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N2117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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1N2117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N3191

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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1N3191

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N3255

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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1N3255

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

1N4005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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1N4005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

SENSITRON INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

200490-703

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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200490-703

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

211-38246

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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211-38246

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

TELECOM INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

212-76

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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212-76

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

ZENITH ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

300002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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300002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

DYNARAD CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

507A996H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

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507A996H01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

WESTINGHOUSE ELECTRIC CORP POWER GENERATION-GENERATOR DIV

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

653-520-9005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

View More Info

653-520-9005

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003562978

NSN

5961-00-356-2978

MFG

HONEYWELL INTERNATIONAL INC. DBA HONEYWELL DIV AEROSPACE - PHOENIX

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE