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5961-00-341-5935

20 Products

072001270

TRANSISTOR

NSN, MFG P/N

5961003415935

NSN

5961-00-341-5935

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072001270

TRANSISTOR

NSN, MFG P/N

5961003415935

NSN

5961-00-341-5935

MFG

TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD

Description

DESIGN CONTROL REFERENCE: 072001270
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 5.9 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2SC470-5-2

TRANSISTOR

NSN, MFG P/N

5961003415935

NSN

5961-00-341-5935

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2SC470-5-2

TRANSISTOR

NSN, MFG P/N

5961003415935

NSN

5961-00-341-5935

MFG

SONY CORPORATION

Description

DESIGN CONTROL REFERENCE: 072001270
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 5.9 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

072001500

TRANSISTOR

NSN, MFG P/N

5961003415939

NSN

5961-00-341-5939

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072001500

TRANSISTOR

NSN, MFG P/N

5961003415939

NSN

5961-00-341-5939

MFG

TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD

Description

DESIGN CONTROL REFERENCE: 072001500
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 5.9 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2SC756

TRANSISTOR

NSN, MFG P/N

5961003415939

NSN

5961-00-341-5939

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2SC756

TRANSISTOR

NSN, MFG P/N

5961003415939

NSN

5961-00-341-5939

MFG

SONY CORPORATION

Description

DESIGN CONTROL REFERENCE: 072001500
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.4 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 5.9 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

072001560

TRANSISTOR

NSN, MFG P/N

5961003415943

NSN

5961-00-341-5943

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072001560

TRANSISTOR

NSN, MFG P/N

5961003415943

NSN

5961-00-341-5943

MFG

TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.50 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 072001560
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.787 INCHES MAXIMUM
OVERALL LENGTH: 0.374 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPE

2SC665B

TRANSISTOR

NSN, MFG P/N

5961003415943

NSN

5961-00-341-5943

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2SC665B

TRANSISTOR

NSN, MFG P/N

5961003415943

NSN

5961-00-341-5943

MFG

HITACHI ENGINEERING WORKS

Description

CURRENT RATING PER CHARACTERISTIC: 7.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.50 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 072001560
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.787 INCHES MAXIMUM
OVERALL LENGTH: 0.374 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 130.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPE

072001690

TRANSISTOR

NSN, MFG P/N

5961003415946

NSN

5961-00-341-5946

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072001690

TRANSISTOR

NSN, MFG P/N

5961003415946

NSN

5961-00-341-5946

MFG

TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD

Description

DESIGN CONTROL REFERENCE: 072001690
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL HEIGHT: 9.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 40.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 26.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

2SC1576 P/N202645240

TRANSISTOR

NSN, MFG P/N

5961003415946

NSN

5961-00-341-5946

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2SC1576 P/N202645240

TRANSISTOR

NSN, MFG P/N

5961003415946

NSN

5961-00-341-5946

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

DESIGN CONTROL REFERENCE: 072001690
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL HEIGHT: 9.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 40.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 26.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

2SC807

TRANSISTOR

NSN, MFG P/N

5961003415946

NSN

5961-00-341-5946

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2SC807

TRANSISTOR

NSN, MFG P/N

5961003415946

NSN

5961-00-341-5946

MFG

SONY CORPORATION

Description

DESIGN CONTROL REFERENCE: 072001690
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL HEIGHT: 9.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 40.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 26.0 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:

072001700

TRANSISTOR

NSN, MFG P/N

5961003415947

NSN

5961-00-341-5947

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072001700

TRANSISTOR

NSN, MFG P/N

5961003415947

NSN

5961-00-341-5947

MFG

TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 072001700
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: S0555
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BR

2SC979R

TRANSISTOR

NSN, MFG P/N

5961003415947

NSN

5961-00-341-5947

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2SC979R

TRANSISTOR

NSN, MFG P/N

5961003415947

NSN

5961-00-341-5947

MFG

TOKYO SHIBAURA ELECTRIC CO. LTD

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 072001700
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MANUFACTURERS CODE: S0555
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BR

2994352

TRANSISTOR

NSN, MFG P/N

5961003416539

NSN

5961-00-341-6539

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2994352

TRANSISTOR

NSN, MFG P/N

5961003416539

NSN

5961-00-341-6539

MFG

NAVAL SEA SYSTEMS COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 0.05 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 07421
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: T068-014-1001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 500.0 MAXIMUM COLLECTOR-

2N5010

TRANSISTOR

NSN, MFG P/N

5961003416539

NSN

5961-00-341-6539

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2N5010

TRANSISTOR

NSN, MFG P/N

5961003416539

NSN

5961-00-341-6539

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 0.05 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 07421
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: T068-014-1001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 500.0 MAXIMUM COLLECTOR-

T068-014-1001

TRANSISTOR

NSN, MFG P/N

5961003416539

NSN

5961-00-341-6539

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T068-014-1001

TRANSISTOR

NSN, MFG P/N

5961003416539

NSN

5961-00-341-6539

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 0.05 AMPERES MAXIMUM BASE CURRENT, DC AND 0.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 07421
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: T068-014-1001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 500.0 MAXIMUM COLLECTOR-

151-0367-00

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

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151-0367-00

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.195 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

89300410

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

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89300410

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

MFG

THALES AIR DEFENCE

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.195 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SKA6516

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

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SKA6516

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.195 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

SPS8811

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

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SPS8811

TRANSISTOR

NSN, MFG P/N

5961003421817

NSN

5961-00-342-1817

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.195 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

153-0052-00

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003421820

NSN

5961-00-342-1820

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153-0052-00

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961003421820

NSN

5961-00-342-1820

MFG

TEKTRONIX INC. DBA TEKTRONIX

151-1022-00

TRANSISTOR

NSN, MFG P/N

5961003421822

NSN

5961-00-342-1822

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151-1022-00

TRANSISTOR

NSN, MFG P/N

5961003421822

NSN

5961-00-342-1822

MFG

SPACELABS-HILLSBORO OPERATIONS SQUIBB VITATEK INC

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.695 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO GATE VOLTAGE