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5961-00-411-5211
20 Products
312922
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004115211
NSN
5961-00-411-5211
MFG
TELEMECHANICS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
SA3106
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004113028
NSN
5961-00-411-3028
SA3106
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004113028
NSN
5961-00-411-3028
MFG
SEMTECH CORPORATION
Description
III END ITEM IDENTIFICATION: FIGHTER AIRCRAFT F14
MANUFACTURERS CODE: 09344
MFR SOURCE CONTROLLING REFERENCE: PS70819-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.570 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
Related Searches:
PS70800-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004113040
NSN
5961-00-411-3040
PS70800-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004113040
NSN
5961-00-411-3040
MFG
ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 09344-PS70800 DRAWING
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 PEAK INVERSE VOLTAGE
III END ITEM IDENTIFICATION: F-14 ACFT
MANUFACTURERS CODE: 09344
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: PS70800-1
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 4.000 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NON-CONDUCTIVE EPOXY SEALED,FIVE LEADS
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
SA3206
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004113040
NSN
5961-00-411-3040
SA3206
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004113040
NSN
5961-00-411-3040
MFG
SEMTECH CORPORATION
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 09344-PS70800 DRAWING
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10000.0 PEAK INVERSE VOLTAGE
III END ITEM IDENTIFICATION: F-14 ACFT
MANUFACTURERS CODE: 09344
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: PS70800-1
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OVERALL HEIGHT: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 4.000 INCHES NOMINAL
OVERALL WIDTH: 0.375 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NON-CONDUCTIVE EPOXY SEALED,FIVE LEADS
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
5082-2824-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004113079
NSN
5961-00-411-3079
5082-2824-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004113079
NSN
5961-00-411-3079
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
619503-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004113079
NSN
5961-00-411-3079
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MICROAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
103-619-003
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004115169
NSN
5961-00-411-5169
103-619-003
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004115169
NSN
5961-00-411-5169
MFG
L-3 COMMUNICATIONS CORPORATION DBA GLOBAL NETWORK SOLUTIONS DIV AYDIN COMMUNICATIONS DIVISION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-70
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.270 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5288 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 175.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN
Related Searches:
2N4100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004115169
NSN
5961-00-411-5169
2N4100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004115169
NSN
5961-00-411-5169
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-70
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.270 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 80131-RELEASE5288 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
TRANSFER RATIO: 175.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN
Related Searches:
7280539
TRANSISTOR
NSN, MFG P/N
5961004115786
NSN
5961-00-411-5786
MFG
CAL-POWER CORPORATION
Description
TRANSISTOR
Related Searches:
653-024-9026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004117028
NSN
5961-00-411-7028
653-024-9026
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004117028
NSN
5961-00-411-7028
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.5 GRAMS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: METAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.710 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
UZ7880
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004117028
NSN
5961-00-411-7028
MFG
MICRO USPD INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 1.5 GRAMS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: METAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL LENGTH: 0.710 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.187 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0
Related Searches:
157-1403
TRANSISTOR
NSN, MFG P/N
5961004117511
NSN
5961-00-411-7511
MFG
AUTEK SYSTEMS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 175.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
40374
TRANSISTOR
NSN, MFG P/N
5961004117511
NSN
5961-00-411-7511
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.297 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 35.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 175.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
6410
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004117542
NSN
5961-00-411-7542
MFG
MICRO USPD INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
911132-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004117542
NSN
5961-00-411-7542
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
UTR6410
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004117542
NSN
5961-00-411-7542
MFG
ARROW ELECTRONICS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
Related Searches:
323934
TRANSISTOR
NSN, MFG P/N
5961004117548
NSN
5961-00-411-7548
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
326291
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004117549
NSN
5961-00-411-7549
326291
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004117549
NSN
5961-00-411-7549
MFG
TELEMECHANICS INC
Description
MATERIAL: SILICON
Related Searches:
18DB5A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004117550
NSN
5961-00-411-7550
18DB5A
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004117550
NSN
5961-00-411-7550
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -40.0 TO 140.0 DEG CELSIUS
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
Related Searches:
326292
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004117550
NSN
5961-00-411-7550
326292
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004117550
NSN
5961-00-411-7550
MFG
TELEMECHANICS INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -40.0 TO 140.0 DEG CELSIUS
OVERALL HEIGHT: 0.220 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
OVERALL WIDTH: 0.560 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
