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5961-00-774-7318
20 Products
1850-0101
TRANSISTOR
NSN, MFG P/N
5961007747318
NSN
5961-00-774-7318
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: LOS ANGELES CLASS SSN (688), BLUE RIDGE CLASS LCC-19, OLIVER PERRY CLASS FFG, IWO JIMA CLASS LPH, FORRESTAL CLASS CV, NIMITZ CLASS CVN, SPRUANCE CLASS DD (963), EMORY S. LAND CLASS AS. GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER
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1900-0011
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007747314
NSN
5961-00-774-7314
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.240 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.766 INCHES MINIMUM AND 0.792 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
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1N416BM
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007747314
NSN
5961-00-774-7314
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.240 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.766 INCHES MINIMUM AND 0.792 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
34709
TRANSISTOR
NSN, MFG P/N
5961007747318
NSN
5961-00-774-7318
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: LOS ANGELES CLASS SSN (688), BLUE RIDGE CLASS LCC-19, OLIVER PERRY CLASS FFG, IWO JIMA CLASS LPH, FORRESTAL CLASS CV, NIMITZ CLASS CVN, SPRUANCE CLASS DD (963), EMORY S. LAND CLASS AS. GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER
Related Searches:
GA3113
TRANSISTOR
NSN, MFG P/N
5961007747318
NSN
5961-00-774-7318
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: LOS ANGELES CLASS SSN (688), BLUE RIDGE CLASS LCC-19, OLIVER PERRY CLASS FFG, IWO JIMA CLASS LPH, FORRESTAL CLASS CV, NIMITZ CLASS CVN, SPRUANCE CLASS DD (963), EMORY S. LAND CLASS AS. GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT (GPETE).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.359 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: VOLTAGE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER
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910D42-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007747934
NSN
5961-00-774-7934
MFG
BOEING COMPANY THE DBA BOEING
Description
DESIGN CONTROL REFERENCE: 910D42-3
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 43999
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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353-3442-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007748218
NSN
5961-00-774-8218
353-3442-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007748218
NSN
5961-00-774-8218
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4561
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007748218
NSN
5961-00-774-8218
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 4.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.237 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MINIMUM BREAKDOWN VOLTAGE, DC
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1N1321A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007749496
NSN
5961-00-774-9496
MFG
N A P SMD TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 41.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
9157319
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007749496
NSN
5961-00-774-9496
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 41.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N1731
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007750383
NSN
5961-00-775-0383
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
DESIGN CONTROL REFERENCE: 1N1731
MANUFACTURERS CODE: 01281
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
400A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007750384
NSN
5961-00-775-0384
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
DESIGN CONTROL REFERENCE: 400A
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 06KW9
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
014-579
TRANSISTOR
NSN, MFG P/N
5961007750486
NSN
5961-00-775-0486
MFG
AMPEX SYSTEMS CORP
Description
DESIGN CONTROL REFERENCE: SP8309
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
6254-397REVC
TRANSISTOR
NSN, MFG P/N
5961007750486
NSN
5961-00-775-0486
MFG
RECON/OPTICAL INC .
Description
DESIGN CONTROL REFERENCE: SP8309
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SP8309
TRANSISTOR
NSN, MFG P/N
5961007750486
NSN
5961-00-775-0486
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN CONTROL REFERENCE: SP8309
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MANUFACTURERS CODE: 07263
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
69-5537
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961007750490
NSN
5961-00-775-0490
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
DESIGN CONTROL REFERENCE: 69-5537
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 81483
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
291623-49
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007750512
NSN
5961-00-775-0512
MFG
CPI INTERNATIONAL INC COMMUNICATIONS & POWER INDUSTRIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
3148447
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007750512
NSN
5961-00-775-0512
MFG
NAVAL SEA SYSTEMS COMMAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
352250017424
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007750512
NSN
5961-00-775-0512
352250017424
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007750512
NSN
5961-00-775-0512
MFG
THALES NEDERLAND
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
Related Searches:
ASI30432
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961007750512
NSN
5961-00-775-0512
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
