My Quote Request
No products added yet
5961-01-448-3255
20 Products
43033-212-00481
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
43033-212-00481
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
MFG
NAVAL AIR WARFARE CTR AIRCRAFT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 29357-43033-212-00481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 50.0 MAXIMUM EMITTER
Related Searches:
12941506
TRANSISTOR
NSN, MFG P/N
5961014474309
NSN
5961-01-447-4309
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941506
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
JANTX2N6300
TRANSISTOR
NSN, MFG P/N
5961014474309
NSN
5961-01-447-4309
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941506
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
NH12941506
TRANSISTOR
NSN, MFG P/N
5961014474309
NSN
5961-01-447-4309
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941506
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
12941505
TRANSISTOR
NSN, MFG P/N
5961014474310
NSN
5961-01-447-4310
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941505
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
Related Searches:
JANTX2N6298
TRANSISTOR
NSN, MFG P/N
5961014474310
NSN
5961-01-447-4310
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941505
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
Related Searches:
NH12941505
TRANSISTOR
NSN, MFG P/N
5961014474310
NSN
5961-01-447-4310
MFG
DLA LAND AND MARITIME
Description
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12941505
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
Related Searches:
207962-002
TRANSISTOR
NSN, MFG P/N
5961014476029
NSN
5961-01-447-6029
MFG
HDL RESEARCH LAB INC
Description
DESIGN CONTROL REFERENCE: 207962-002
III END ITEM IDENTIFICATION: PREPROVISIONING SUPPORT NAVICP IS POE
MANUFACTURERS CODE: 66015
THE MANUFACTURERS DATA:
Related Searches:
940-22960-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014476161
NSN
5961-01-447-6161
940-22960-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014476161
NSN
5961-01-447-6161
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
31079
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014476239
NSN
5961-01-447-6239
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TN0604N3
TRANSISTOR
NSN, MFG P/N
5961014476543
NSN
5961-01-447-6543
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND SWITCHING
III END ITEM IDENTIFICATION: 6625-01-377-6166 OHMMETER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
TP0604N3
TRANSISTOR
NSN, MFG P/N
5961014476615
NSN
5961-01-447-6615
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
FUNCTION FOR WHICH DESIGNED: AMPLIFIER AND SWITCHING
III END ITEM IDENTIFICATION: 6625-01-377-6166 OHMMETER
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.190 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
207962-001
TRANSISTOR
NSN, MFG P/N
5961014477833
NSN
5961-01-447-7833
MFG
HDL RESEARCH LAB INC
Description
DESIGN CONTROL REFERENCE: 207962-001
III END ITEM IDENTIFICATION: PREPROVISIONING SUPPORT NAVICP IS POE
MANUFACTURERS CODE: 66015
THE MANUFACTURERS DATA:
Related Searches:
460691-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014477835
NSN
5961-01-447-7835
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 460691-1
III END ITEM IDENTIFICATION: PREPROVISIONING SUPPORT NAVICP IS POE
MANUFACTURERS CODE: 00752
THE MANUFACTURERS DATA:
Related Searches:
1901-1284
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014478829
NSN
5961-01-447-8829
1901-1284
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014478829
NSN
5961-01-447-8829
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
III END ITEM IDENTIFICATION: ELECTRONIC LOAD MODULE
SPECIAL FEATURES: 75 VOLT
Related Searches:
10397-5410-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014479963
NSN
5961-01-447-9963
10397-5410-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014479963
NSN
5961-01-447-9963
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
DESIGN CONTROL REFERENCE: 10397-5410-01
III END ITEM IDENTIFICATION: RF-755A HF TRANSMITTER
MANUFACTURERS CODE: 14304
MOUNTING METHOD: BOLT
THE MANUFACTURERS DATA:
Related Searches:
SG6455
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014482742
NSN
5961-01-448-2742
SG6455
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014482742
NSN
5961-01-448-2742
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
12CTQ045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014482923
NSN
5961-01-448-2923
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
ACR25U10LG-56
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
ACR25U10LG-56
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
MFG
GEC PLESSEY SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 29357-43033-212-00481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 50.0 MAXIMUM EMITTER
Related Searches:
ACR44U10LG7002A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
ACR44U10LG7002A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014483255
NSN
5961-01-448-3255
MFG
DARRAH ELECTRIC COMPANY INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-48
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 115.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.650 INCHES MAXIMUM
OVERALL LENGTH: 1.646 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.5 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 29357-43033-212-00481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 650.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 50.0 MAXIMUM EMITTER
