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5961-00-175-2823
20 Products
5082-2234
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
MFG
HEWLETT PACKARD CO
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, T-37 AIRCRAFT; AIRCRAFT, PHANTOM F-4; SUPPORT EQUIPMENT, T-38 AIRCRAFT; AIRCRAFT, FREEDOM FIGHTER F-5; AIRCRAFT. EAGLE F-15
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT STUDS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.98 MILLIMETERS MINIMUM AND 2.13 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.83 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM CW POWER AND 1.0 WATTS MAXIMUM PULSE RF POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
SS1985
TRANSISTOR
NSN, MFG P/N
5961001745682
NSN
5961-00-174-5682
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 36001142-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80249
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
ST-1317
TRANSISTOR
NSN, MFG P/N
5961001745682
NSN
5961-00-174-5682
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
DESIGN CONTROL REFERENCE: 36001142-001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80249
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
932084-2
TRANSISTOR
NSN, MFG P/N
5961001745699
NSN
5961-00-174-5699
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
TE1078
TRANSISTOR
NSN, MFG P/N
5961001745699
NSN
5961-00-174-5699
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
37954
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001745715
NSN
5961-00-174-5715
MFG
SIEMENS WATER TECHNOLOGIES CORP. DBA ELECTRIC CATALYTIC PRODUCTS GROUP DIV ELECTROCATALYTIC PRODUCTS DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
RA3906
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001745737
NSN
5961-00-174-5737
RA3906
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001745737
NSN
5961-00-174-5737
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
Related Searches:
S0DSLD35FS
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001745737
NSN
5961-00-174-5737
S0DSLD35FS
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001745737
NSN
5961-00-174-5737
MFG
SOLITRON DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A1 HALF-WAVE 1 PHASE
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
Related Searches:
116973-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001745743
NSN
5961-00-174-5743
116973-002
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001745743
NSN
5961-00-174-5743
MFG
TDK-LAMBDA AMERICAS INC. D IV HIGH POWER DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 2.00 AMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4898 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N3670
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001745743
NSN
5961-00-174-5743
2N3670
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001745743
NSN
5961-00-174-5743
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 2.00 AMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4898 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
RELEASE4898
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001745743
NSN
5961-00-174-5743
RELEASE4898
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961001745743
NSN
5961-00-174-5743
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 2.00 AMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4898 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
710A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001745755
NSN
5961-00-174-5755
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 2.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FBL00-085
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001745755
NSN
5961-00-174-5755
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 2.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
710B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001745756
NSN
5961-00-174-5756
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 2.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
FBL00-089
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001745756
NSN
5961-00-174-5756
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 2.420 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.245 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5082-2711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, T-37 AIRCRAFT; AIRCRAFT, PHANTOM F-4; SUPPORT EQUIPMENT, T-38 AIRCRAFT; AIRCRAFT, FREEDOM FIGHTER F-5; AIRCRAFT. EAGLE F-15
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT STUDS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.98 MILLIMETERS MINIMUM AND 2.13 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.83 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM CW POWER AND 1.0 WATTS MAXIMUM PULSE RF POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
553327G0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
553327G0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
MFG
THALES COMMUNICATIONS S.A.
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, T-37 AIRCRAFT; AIRCRAFT, PHANTOM F-4; SUPPORT EQUIPMENT, T-38 AIRCRAFT; AIRCRAFT, FREEDOM FIGHTER F-5; AIRCRAFT. EAGLE F-15
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT STUDS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.98 MILLIMETERS MINIMUM AND 2.13 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.83 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM CW POWER AND 1.0 WATTS MAXIMUM PULSE RF POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
MA40101-119
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
MA40101-119
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, T-37 AIRCRAFT; AIRCRAFT, PHANTOM F-4; SUPPORT EQUIPMENT, T-38 AIRCRAFT; AIRCRAFT, FREEDOM FIGHTER F-5; AIRCRAFT. EAGLE F-15
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT STUDS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.98 MILLIMETERS MINIMUM AND 2.13 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.83 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM CW POWER AND 1.0 WATTS MAXIMUM PULSE RF POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
UX2711
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001752823
NSN
5961-00-175-2823
MFG
MICROMETRICS INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 NOMINAL
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, T-37 AIRCRAFT; AIRCRAFT, PHANTOM F-4; SUPPORT EQUIPMENT, T-38 AIRCRAFT; AIRCRAFT, FREEDOM FIGHTER F-5; AIRCRAFT. EAGLE F-15
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CONTACT STUDS PLATED GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 1.98 MILLIMETERS MINIMUM AND 2.13 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.83 MILLIMETERS MINIMUM AND 5.33 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM CW POWER AND 1.0 WATTS MAXIMUM PULSE RF POWER
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 2 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
5082-2712
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961001752844
NSN
5961-00-175-2844
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: DETECTOR AND MIXER
INCLOSURE MATERIAL: CERAMIC ALL SEMICONDUCTOR DEVICE DIODE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.084 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.190 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: 9.3 GHZ TEST FREQUENCY; 6.5 DECIBEL NOISE FIGURE
TERMINAL TYPE AND QUANTITY: 2 BINDING POST ALL SEMICONDUCTOR DEVICE DIODE
