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5961-00-972-8996

20 Products

1198011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009728996

NSN

5961-00-972-8996

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1198011

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009728996

NSN

5961-00-972-8996

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE

MA4133

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009728996

NSN

5961-00-972-8996

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MA4133

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009728996

NSN

5961-00-972-8996

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.640 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.180 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 FERRULE

472-0304-001

TRANSISTOR

NSN, MFG P/N

5961009729147

NSN

5961-00-972-9147

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472-0304-001

TRANSISTOR

NSN, MFG P/N

5961009729147

NSN

5961-00-972-9147

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

T51622

TRANSISTOR

NSN, MFG P/N

5961009729147

NSN

5961-00-972-9147

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T51622

TRANSISTOR

NSN, MFG P/N

5961009729147

NSN

5961-00-972-9147

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

CURRENT RATING PER CHARACTERISTIC: -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -18.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

16T37A

TRANSISTOR

NSN, MFG P/N

5961009729204

NSN

5961-00-972-9204

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16T37A

TRANSISTOR

NSN, MFG P/N

5961009729204

NSN

5961-00-972-9204

MFG

PHILIPS ELECTRONICS NORTH AMERICA CORPORATION DBA PHILIPS MEDICAL SYSTEMS CMS DIV HEALTHCARE SOLUTIONS GROUP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.820 INCHES MAXIMUM
OVERALL LENGTH: 0.319 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC

413930-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729279

NSN

5961-00-972-9279

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413930-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729279

NSN

5961-00-972-9279

MFG

RAYTHEON COMPANY

Description

DESIGN CONTROL REFERENCE: 413930-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

D10316A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729279

NSN

5961-00-972-9279

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D10316A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729279

NSN

5961-00-972-9279

MFG

CLEVELAND METAL STAMPING CO

Description

DESIGN CONTROL REFERENCE: 413930-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

DT80401G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729279

NSN

5961-00-972-9279

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DT80401G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729279

NSN

5961-00-972-9279

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

DESIGN CONTROL REFERENCE: 413930-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96214
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1-5M50Z5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729318

NSN

5961-00-972-9318

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1-5M50Z5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729318

NSN

5961-00-972-9318

MFG

FREESCALE SEMICONDUCTOR INC.

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

2242480

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729318

NSN

5961-00-972-9318

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2242480

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729318

NSN

5961-00-972-9318

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

974296-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729318

NSN

5961-00-972-9318

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974296-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729318

NSN

5961-00-972-9318

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.338 INCHES MAXIMUM
OVERALL LENGTH: 0.256 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.940 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM NOMINAL REGULATOR VOLTAGE

998A562G3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729322

NSN

5961-00-972-9322

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998A562G3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729322

NSN

5961-00-972-9322

MFG

GENICOM CORP

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.500 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF

3C60

TRANSISTOR

NSN, MFG P/N

5961009729384

NSN

5961-00-972-9384

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3C60

TRANSISTOR

NSN, MFG P/N

5961009729384

NSN

5961-00-972-9384

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: 3C60
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

3C15

TRANSISTOR

NSN, MFG P/N

5961009729385

NSN

5961-00-972-9385

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3C15

TRANSISTOR

NSN, MFG P/N

5961009729385

NSN

5961-00-972-9385

MFG

MICRO USPD INC

Description

DESIGN CONTROL REFERENCE: 3C15
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 12969
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

1N3286

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729388

NSN

5961-00-972-9388

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1N3286

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729388

NSN

5961-00-972-9388

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3410 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N328S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729388

NSN

5961-00-972-9388

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1N328S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729388

NSN

5961-00-972-9388

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE3410 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3000.0 MAXIMUM REVERSE VOLTAGE, PEAK

1N3256

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729395

NSN

5961-00-972-9395

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1N3256

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729395

NSN

5961-00-972-9395

MFG

ELECTRONIC INDUSTRIES ASSOCIATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MICROWAVE LANDING SYSTEMS; TICONDEROGA CLASS CG (47); GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; F4S AIRCRAFT; TELETYPE, MODEL 28; TARAWA CLASS LHA; WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE3425 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

353-3277-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729395

NSN

5961-00-972-9395

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353-3277-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729395

NSN

5961-00-972-9395

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MICROWAVE LANDING SYSTEMS; TICONDEROGA CLASS CG (47); GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; F4S AIRCRAFT; TELETYPE, MODEL 28; TARAWA CLASS LHA; WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE3425 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

5254-024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729395

NSN

5961-00-972-9395

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5254-024

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009729395

NSN

5961-00-972-9395

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: MICROWAVE LANDING SYSTEMS; TICONDEROGA CLASS CG (47); GENERAL PURPOSE ELECTRONIC TEST EQUIPMENT GPETE; F4S AIRCRAFT; TELETYPE, MODEL 28; TARAWA CLASS LHA; WASP CLASS LHD
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
SPECIFICATION/STANDARD DATA: 80131-RELEASE3425 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.400 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK

925276-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009729583

NSN

5961-00-972-9583

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925276-1

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009729583

NSN

5961-00-972-9583

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.375 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC AND 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS