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5961-01-027-1605
20 Products
1417600-773
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010271605
NSN
5961-01-027-1605
1417600-773
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010271605
NSN
5961-01-027-1605
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
Related Searches:
JAN2N697M
TRANSISTOR
NSN, MFG P/N
5961010269423
NSN
5961-01-026-9423
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N697M
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-99
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
1N4251
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010269629
NSN
5961-01-026-9629
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N857
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010269630
NSN
5961-01-026-9630
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
D2FF10304AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010269631
NSN
5961-01-026-9631
D2FF10304AA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010269631
NSN
5961-01-026-9631
MFG
TELEDYNE INDUSTRIES INC TELEDYNE POWER SYSTEMS DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5249-887
TRANSISTOR
NSN, MFG P/N
5961010269827
NSN
5961-01-026-9827
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS_
Related Searches:
694-0033
TRANSISTOR
NSN, MFG P/N
5961010269827
NSN
5961-01-026-9827
MFG
STACO ENERGY PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS_
Related Searches:
8903-1
TRANSISTOR
NSN, MFG P/N
5961010269827
NSN
5961-01-026-9827
MFG
EATON AVIATION CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS_
Related Searches:
STP-32
TRANSISTOR
NSN, MFG P/N
5961010269827
NSN
5961-01-026-9827
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS_
Related Searches:
T1P32
TRANSISTOR
NSN, MFG P/N
5961010269827
NSN
5961-01-026-9827
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS_
Related Searches:
TIP32
TRANSISTOR
NSN, MFG P/N
5961010269827
NSN
5961-01-026-9827
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: -3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.145 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS_
Related Searches:
3N90
TRANSISTOR
NSN, MFG P/N
5961010269829
NSN
5961-01-026-9829
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 1.710 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: OFFSET VOLTAGE 50 MICROVOLTS,OFFSET VOLTAGE CHANGE WITH TEMP 75 MICROVOLTS; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
00182-62902
TRANSISTOR
NSN, MFG P/N
5961010270276
NSN
5961-01-027-0276
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
DESIGN CONTROL REFERENCE: 00182-62902
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 1MY97
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.625 INCHES MAXIMUM
OVERALL WIDTH: 0.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
12D
TRANSISTOR
NSN, MFG P/N
5961010270282
NSN
5961-01-027-0282
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
20-00866-001
TRANSISTOR
NSN, MFG P/N
5961010270757
NSN
5961-01-027-0757
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN
Related Searches:
20-00866-004
TRANSISTOR
NSN, MFG P/N
5961010270757
NSN
5961-01-027-0757
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN
Related Searches:
95-00145-001
TRANSISTOR
NSN, MFG P/N
5961010270759
NSN
5961-01-027-0759
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
TRANSISTOR
Related Searches:
AD9570720
TRANSISTOR
NSN, MFG P/N
5961010270759
NSN
5961-01-027-0759
MFG
J L M ELECTRONICS INC DBA PACK RITE COMPANY
Description
TRANSISTOR
Related Searches:
BC1198
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010271605
NSN
5961-01-027-1605
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
Related Searches:
FSA2002M
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010271605
NSN
5961-01-027-1605
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
