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5961-01-066-9643
20 Products
CL709L
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961010669643
NSN
5961-01-066-9643
MFG
CLAIREX ELECTRONICS DIV OF CLAIREX CORP
Description
III END ITEM IDENTIFICATION: AIRCRAFT, F-16
Related Searches:
VT333
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961010669643
NSN
5961-01-066-9643
MFG
EG AND G INC
Description
III END ITEM IDENTIFICATION: AIRCRAFT, F-16
Related Searches:
07-12112
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669644
NSN
5961-01-066-9644
07-12112
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669644
NSN
5961-01-066-9644
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL LENGTH: 2.125 INCHES MINIMUM AND 2.170 INCHES MAXIMUM
OVERALL WIDTH: 1.370 INCHES MINIMUM AND 1.385 INCHES MAXIMUM
SPECIAL FEATURES: TWO MTG HOLES 0.150 IN.MIN AND 0.170 IN.MAX DIA SPACED 1.730 IN.C TO C;INCLOSURE FEATURE:PLASTIC CASE;UNIT UNPACKAGE WEIGHT:41.000 GRAMS
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
DMS 84009B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669644
NSN
5961-01-066-9644
DMS 84009B
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669644
NSN
5961-01-066-9644
MFG
DLA LAND AND MARITIME
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL LENGTH: 2.125 INCHES MINIMUM AND 2.170 INCHES MAXIMUM
OVERALL WIDTH: 1.370 INCHES MINIMUM AND 1.385 INCHES MAXIMUM
SPECIAL FEATURES: TWO MTG HOLES 0.150 IN.MIN AND 0.170 IN.MAX DIA SPACED 1.730 IN.C TO C;INCLOSURE FEATURE:PLASTIC CASE;UNIT UNPACKAGE WEIGHT:41.000 GRAMS
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
MDA1201
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669644
NSN
5961-01-066-9644
MDA1201
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669644
NSN
5961-01-066-9644
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL LENGTH: 2.125 INCHES MINIMUM AND 2.170 INCHES MAXIMUM
OVERALL WIDTH: 1.370 INCHES MINIMUM AND 1.385 INCHES MAXIMUM
SPECIAL FEATURES: TWO MTG HOLES 0.150 IN.MIN AND 0.170 IN.MAX DIA SPACED 1.730 IN.C TO C;INCLOSURE FEATURE:PLASTIC CASE;UNIT UNPACKAGE WEIGHT:41.000 GRAMS
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
10047-1039
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669645
NSN
5961-01-066-9645
10047-1039
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669645
NSN
5961-01-066-9645
MFG
COOPER CROUSE-HINDS LLC DBA AIRPORT LIGHTING DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: MEDIUM INTENSITY APPROACH LIGHTING SYSTEM,FA8767 (MALS)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.850 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; EPOXY CASE; 2.8 VOLTS RMS AND 20 AMPS DC; MOUNTING HOLE 0.187 DIA;3A2A21B2, TI 6850.38, FA 9630, MALSR, SEC 1-10, PG 8-30
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
H440
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010669645
NSN
5961-01-066-9645
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: MEDIUM INTENSITY APPROACH LIGHTING SYSTEM,FA8767 (MALS)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.850 INCHES NOMINAL
OVERALL WIDTH: 1.850 INCHES NOMINAL
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; EPOXY CASE; 2.8 VOLTS RMS AND 20 AMPS DC; MOUNTING HOLE 0.187 DIA;3A2A21B2, TI 6850.38, FA 9630, MALSR, SEC 1-10, PG 8-30
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
A532E001-101
TRANSISTOR
NSN, MFG P/N
5961010669923
NSN
5961-01-066-9923
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 15.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.550 INCHES MINIMUM AND 0.650 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.00 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.282 INCHES NOMINAL
TERMINAL LENGTH: 0.360 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-
Related Searches:
16776977-001
TRANSISTOR
NSN, MFG P/N
5961010671063
NSN
5961-01-067-1063
MFG
SYPRIS ELECTRONICS LLC
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.180 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
1854-1202
TRANSISTOR
NSN, MFG P/N
5961010671063
NSN
5961-01-067-1063
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.180 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
MPSA17-5
TRANSISTOR
NSN, MFG P/N
5961010671063
NSN
5961-01-067-1063
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES NOMINAL
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.180 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 15.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
151-0057-00
TRANSISTOR
NSN, MFG P/N
5961010671065
NSN
5961-01-067-1065
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
140EDB105
TRANSISTOR
NSN, MFG P/N
5961010671066
NSN
5961-01-067-1066
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS AND CONTACT SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03640-6096879 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 540.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC A
Related Searches:
6096879-4
TRANSISTOR
NSN, MFG P/N
5961010671066
NSN
5961-01-067-1066
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS AND CONTACT SURFACES GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.295 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.440 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03640-6096879 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 550.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 540.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC A
Related Searches:
2N6730
TRANSISTOR
NSN, MFG P/N
5961010671068
NSN
5961-01-067-1068
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
2N6718
TRANSISTOR
NSN, MFG P/N
5961010671069
NSN
5961-01-067-1069
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
17-123787-3
TRANSISTOR
NSN, MFG P/N
5961010671070
NSN
5961-01-067-1070
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28815-17-123787 DRAWING
Related Searches:
2N5396
TRANSISTOR
NSN, MFG P/N
5961010671070
NSN
5961-01-067-1070
MFG
TELCOM SEMICONDUCTOR INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 28815-17-123787 DRAWING
Related Searches:
63BB136
TRANSISTOR
NSN, MFG P/N
5961010671071
NSN
5961-01-067-1071
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.385 INCHES MINIMUM AND 0.440 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.677 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: VOLTAGES ARE MINIMUM; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 WIRE HOOK AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 6.0 MAXIMUM EMITT
Related Searches:
FBN-L169
TRANSISTOR
NSN, MFG P/N
5961010671072
NSN
5961-01-067-1072
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.308 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE
