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5961-01-080-1462
20 Products
205052P1
TRANSISTOR
NSN, MFG P/N
5961010801462
NSN
5961-01-080-1462
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 94117-205052 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR
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13220E3535
TRANSISTOR
NSN, MFG P/N
5961010800424
NSN
5961-01-080-0424
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR
Related Searches:
PN2484
TRANSISTOR
NSN, MFG P/N
5961010800424
NSN
5961-01-080-0424
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR
Related Searches:
S42914
TRANSISTOR
NSN, MFG P/N
5961010800424
NSN
5961-01-080-0424
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR
Related Searches:
2N2219A
TRANSISTOR
NSN, MFG P/N
5961010800425
NSN
5961-01-080-0425
MFG
SOLITRON DEVICES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02809; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM
Related Searches:
L02809
TRANSISTOR
NSN, MFG P/N
5961010800425
NSN
5961-01-080-0425
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE ELECTRONICS SUPPLY CENTER PRODUCTION STANDARD NO. L02809; FOR NAVY NUCLEAR PROPULSION PLANT PRODUCTS ONLY; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM
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13220E4198
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010800429
NSN
5961-01-080-0429
13220E4198
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010800429
NSN
5961-01-080-0429
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 9.17 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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1M28ZS1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010800429
NSN
5961-01-080-0429
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 9.17 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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SMV1295H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010800627
NSN
5961-01-080-0627
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1468-15
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
STMICROELECTRONICS INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
352-1090-080
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
352-1090-080
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
352-1090-240
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
352-1090-240
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
SYNERGETIC TECHNOLOGIES GROUP INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
44004
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
MICROSEMI CORP.-RF POWER PRODUCTS DIV MICROSEMI CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
CD2867
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
J02046R
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
SRF820HQ
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010801220
NSN
5961-01-080-1220
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FIELD FORCE EFFECT TYPE: ELECTROSTATIC CHARGE
INCLOSURE MATERIAL: CERAMIC ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: NPN ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING FACILITY QUANTITY: 2 ALL TRANSISTOR
MOUNTING METHOD: UNTHREADED HOLE ALL TRANSISTOR
OVERALL HEIGHT: 0.300 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.980 INCHES MAXIMUM ALL TRANSISTOR
OVERALL WIDTH: 0.865 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 140.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: CERAMIC CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT
Related Searches:
11732635
TRANSISTOR
NSN, MFG P/N
5961010801461
NSN
5961-01-080-1461
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19200-11732635 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BAS
Related Searches:
191SPA476
TRANSISTOR
NSN, MFG P/N
5961010801461
NSN
5961-01-080-1461
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19200-11732635 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BAS
Related Searches:
H4130B
TRANSISTOR
NSN, MFG P/N
5961010801461
NSN
5961-01-080-1461
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19200-11732635 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BAS
Related Searches:
STA6216
TRANSISTOR
NSN, MFG P/N
5961010801461
NSN
5961-01-080-1461
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 19200-11732635 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BAS
