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5961-01-082-9811
20 Products
CSM3212
DETECOR,CRYSTAL
NSN, MFG P/N
5961010829811
NSN
5961-01-082-9811
MFG
MICROPHASE CORPORATION
Description
DESIGN CONTROL REFERENCE: CSM3212
III END ITEM IDENTIFICATION: RADAR AN/TPB-1C
MANUFACTURERS CODE: 01341
THE MANUFACTURERS DATA:
Related Searches:
SC5825-0004
DETECOR,CRYSTAL
NSN, MFG P/N
5961010829811
NSN
5961-01-082-9811
MFG
DRS ICAS, LLC
Description
DESIGN CONTROL REFERENCE: CSM3212
III END ITEM IDENTIFICATION: RADAR AN/TPB-1C
MANUFACTURERS CODE: 01341
THE MANUFACTURERS DATA:
Related Searches:
5082-7670
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830456
NSN
5961-01-083-0456
5082-7670
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830456
NSN
5961-01-083-0456
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SPECIAL FEATURES: SEVEN SEGMENT DISPLAY,GREEN,COMMON ANODE LEFT HAND DECIMAL,-40 DEG C TO PLUS 85 DEG C OPERATING TEMP RANGE,14 TERMINALS,DISPLAY 0.430 IN.HIGH,0.750 IN.H;0.505 IN.W;0.250 IN.D;STORAGE RANGE TEMP:M40.0/P85.0 DEG C;
Related Searches:
17-140570-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830701
NSN
5961-01-083-0701
17-140570-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830701
NSN
5961-01-083-0701
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
652-1049-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830885
NSN
5961-01-083-0885
652-1049-7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830885
NSN
5961-01-083-0885
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 652-1049-7
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 12969
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.505 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
7904712-06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830885
NSN
5961-01-083-0885
7904712-06
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830885
NSN
5961-01-083-0885
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 652-1049-7
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 12969
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.505 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
48S137622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830886
NSN
5961-01-083-0886
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 4.60 MILLIAMPERES NOMINAL FORWARD CURRENT, TOTAL RMS
DESIGN CONTROL REFERENCE: H1802-14
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27777
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
H1802-14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010830886
NSN
5961-01-083-0886
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 4.60 MILLIAMPERES NOMINAL FORWARD CURRENT, TOTAL RMS
DESIGN CONTROL REFERENCE: H1802-14
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 27777
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.235 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
C531010012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
C531010012
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SA2126
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
SA2126
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SD1569
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
SD1569
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
SS4405
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
SS4405
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010830926
NSN
5961-01-083-0926
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.040 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
OVERALL WIDTH: 0.125 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.150 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC ALL TRANSISTOR
Related Searches:
Z7A10R-100MA
SEMICONDUCTOR,SPECI
NSN, MFG P/N
5961010831030
NSN
5961-01-083-1030
MFG
SEMITRON INDUSTRIES LTD
Description
DESIGN CONTROL REFERENCE: Z7A10R-100MA
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
MANUFACTURERS CODE: K5057
THE MANUFACTURERS DATA:
Related Searches:
Z7A1CR-100MA
SEMICONDUCTOR,SPECI
NSN, MFG P/N
5961010831030
NSN
5961-01-083-1030
MFG
PERFECT PUMP CO INC
Description
DESIGN CONTROL REFERENCE: Z7A10R-100MA
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
MANUFACTURERS CODE: K5057
THE MANUFACTURERS DATA:
Related Searches:
Z7A10-100MA
SEMICONDUCTOR,SPECI
NSN, MFG P/N
5961010831031
NSN
5961-01-083-1031
MFG
SEMITRON INDUSTRIES LTD
Description
DESIGN CONTROL REFERENCE: Z7A10-100MA
III END ITEM IDENTIFICATION: AIRCRAFT MODEL AV-8A
MANUFACTURERS CODE: K5057
THE MANUFACTURERS DATA:
Related Searches:
583R646H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010831282
NSN
5961-01-083-1282
583R646H01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010831282
NSN
5961-01-083-1282
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
DESIGN CONTROL REFERENCE: 583R646H01
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 97942
OVERALL DIAMETER: 0.080 INCHES NOMINAL
OVERALL LENGTH: 0.085 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
007-00035-0000
TRANSISTOR
NSN, MFG P/N
5961010831662
NSN
5961-01-083-1662
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE
Description
DESIGN CONTROL REFERENCE: 007-00035-0000
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 22373
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.625 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
10183538
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010831925
NSN
5961-01-083-1925
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
Related Searches:
SZ12134H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010831925
NSN
5961-01-083-1925
MFG
FREESCALE SEMICONDUCTOR INC.
Description
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.800 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC
Related Searches:
1N3288AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010831926
NSN
5961-01-083-1926
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM REVERSE CURRENT, AVERAGE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 SOLDER STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
