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5961-01-111-1571
20 Products
C33B4EN1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111571
NSN
5961-01-111-1571
C33B4EN1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111571
NSN
5961-01-111-1571
MFG
FMC TECHNOLOGIES INC DIV MATERIAL HANDLING SOLUTIONS
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
600686-7RR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111572
NSN
5961-01-111-1572
600686-7RR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111572
NSN
5961-01-111-1572
MFG
RELIANCE ELECTRIC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
600686-6RR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111573
NSN
5961-01-111-1573
600686-6RR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111573
NSN
5961-01-111-1573
MFG
RELIANCE ELECTRIC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
85014-RR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111574
NSN
5961-01-111-1574
85014-RR
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111574
NSN
5961-01-111-1574
MFG
RELIANCE ELECTRIC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
85014-BW
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111575
NSN
5961-01-111-1575
85014-BW
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111575
NSN
5961-01-111-1575
MFG
RELIANCE ELECTRIC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
85014-46R
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111576
NSN
5961-01-111-1576
85014-46R
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011111576
NSN
5961-01-111-1576
MFG
RELIANCE ELECTRIC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
581R939H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011112237
NSN
5961-01-111-2237
581R939H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011112237
NSN
5961-01-111-2237
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: BURN IN AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.165 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.625 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -45.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC AND -5.0 MAXIMUM EM
Related Searches:
320001
TRANSISTOR
NSN, MFG P/N
5961011112699
NSN
5961-01-111-2699
MFG
DAYTON-GRANGER INTERNATIONAL INC.
Description
TRANSISTOR
Related Searches:
330003
TRANSISTOR
NSN, MFG P/N
5961011112700
NSN
5961-01-111-2700
MFG
DAYTON-GRANGER INTERNATIONAL INC.
Description
TRANSISTOR
Related Searches:
340001
TRANSISTOR
NSN, MFG P/N
5961011112701
NSN
5961-01-111-2701
MFG
DAYTON-GRANGER INTERNATIONAL INC.
Description
TRANSISTOR
Related Searches:
320020
TRANSISTOR
NSN, MFG P/N
5961011112702
NSN
5961-01-111-2702
MFG
DAYTON-GRANGER INTERNATIONAL INC.
Description
TRANSISTOR
Related Searches:
352-0477-00
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011112704
NSN
5961-01-111-2704
352-0477-00
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011112704
NSN
5961-01-111-2704
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MATERIAL: PLASTIC
OVERALL DIAMETER: 0.344 INCHES NOMINAL
OVERALL LENGTH: 0.312 INCHES NOMINAL
Related Searches:
1854-0568
TRANSISTOR
NSN, MFG P/N
5961011113662
NSN
5961-01-111-3662
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG, LOS ANGELES CLASS SSN (688), NIMITZ CLASS CVN, STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47), KIDD CLASS DDG, VIRGINIA CLASS DDG, VIRGINIA CLASS CGN (41), FORRESTAL CLASS CV, SPRUANCE CLASS DD (963).
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.210 INCHES NOMINAL_
Related Searches:
15-02751-01
TRANSISTOR
NSN, MFG P/N
5961011113663
NSN
5961-01-111-3663
MFG
REDACTRON CORP
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM LATCHING CURRENT, DC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
L14DX1022
TRANSISTOR
NSN, MFG P/N
5961011113663
NSN
5961-01-111-3663
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM LATCHING CURRENT, DC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.145 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
1902-1293
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011113664
NSN
5961-01-111-3664
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.04 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
SZ13790
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011113664
NSN
5961-01-111-3664
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.095 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.04 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 10.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N6323
TRANSISTOR
NSN, MFG P/N
5961011114724
NSN
5961-01-111-4724
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.572 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81755-C8646 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 300.0 MAXIMUM COLLECTOR TO EMITTER
Related Searches:
8044
TRANSISTOR
NSN, MFG P/N
5961011114724
NSN
5961-01-111-4724
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.572 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81755-C8646 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 300.0 MAXIMUM COLLECTOR TO EMITTER
Related Searches:
C8646
TRANSISTOR
NSN, MFG P/N
5961011114724
NSN
5961-01-111-4724
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM BASE CURRENT, DC AND 40.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.572 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 81755-C8646 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 300.0 MAXIMUM COLLECTOR TO EMITTER
