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5961-01-236-8273
20 Products
280-20045-117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368273
NSN
5961-01-236-8273
280-20045-117
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368273
NSN
5961-01-236-8273
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 280-20045-117
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
2410-80799
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368272
NSN
5961-01-236-8272
2410-80799
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368272
NSN
5961-01-236-8272
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20042-113
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
280-20042-113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368272
NSN
5961-01-236-8272
280-20042-113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368272
NSN
5961-01-236-8272
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20042-113
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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MT6819
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368273
NSN
5961-01-236-8273
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 280-20045-117
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.2 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
280-20045-144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368274
NSN
5961-01-236-8274
280-20045-144
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368274
NSN
5961-01-236-8274
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-144
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
DZ840831G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368274
NSN
5961-01-236-8274
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-144
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
280-20045-147
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368275
NSN
5961-01-236-8275
280-20045-147
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368275
NSN
5961-01-236-8275
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-147
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
DT840817B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368275
NSN
5961-01-236-8275
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-147
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
280-20045-150
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368276
NSN
5961-01-236-8276
280-20045-150
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368276
NSN
5961-01-236-8276
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-150
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
MV1334
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368276
NSN
5961-01-236-8276
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-150
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
280-20045-153
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368277
NSN
5961-01-236-8277
280-20045-153
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368277
NSN
5961-01-236-8277
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-153
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
MG1337
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368277
NSN
5961-01-236-8277
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-153
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
280-20045-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368278
NSN
5961-01-236-8278
280-20045-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368278
NSN
5961-01-236-8278
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-102
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM FORWARD VOLTAGE, PEAK
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GZ44605C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368278
NSN
5961-01-236-8278
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-102
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 22.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
1N3617
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368279
NSN
5961-01-236-8279
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM REVERSE VOLTAGE, PEAK
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JANS2N3251A
TRANSISTOR
NSN, MFG P/N
5961012368861
NSN
5961-01-236-8861
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS2N3251A
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/323
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/323 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TY
Related Searches:
JANS1N5619
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368863
NSN
5961-01-236-8863
JANS1N5619
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012368863
NSN
5961-01-236-8863
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANS1N5619
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL S
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/429
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/429 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 600.0 MAXIM
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312A1083P1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012368864
NSN
5961-01-236-8864
312A1083P1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012368864
NSN
5961-01-236-8864
MFG
BAE SYSTEMS CONTROLS INC.
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
JANTX2N2324
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012368864
NSN
5961-01-236-8864
JANTX2N2324
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012368864
NSN
5961-01-236-8864
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
1N6171A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012369339
NSN
5961-01-236-9339
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-152
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 168.0 MAXIMUM BREAKDOWN VOLTAGE, DC
