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5961-01-395-5851
20 Products
G390373S1
TRANSISTOR
NSN, MFG P/N
5961013955851
NSN
5961-01-395-5851
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 11.05 MILLIMETERS MAXIMUM
OVERALL LENGTH: 39.37 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.27 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER
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IXSM1397
TRANSISTOR
NSN, MFG P/N
5961013955851
NSN
5961-01-395-5851
MFG
IXYS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 11.05 MILLIMETERS MAXIMUM
OVERALL LENGTH: 39.37 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.27 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER
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OM3017NK
TRANSISTOR
NSN, MFG P/N
5961013955851
NSN
5961-01-395-5851
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 11.05 MILLIMETERS MAXIMUM
OVERALL LENGTH: 39.37 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.27 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER
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JANTXV1N4982
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956021
NSN
5961-01-395-6021
JANTXV1N4982
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956021
NSN
5961-01-395-6021
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 47.50 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4982
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/356
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/356 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOL
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588R849H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013956123
NSN
5961-01-395-6123
588R849H01
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013956123
NSN
5961-01-395-6123
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 13.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 16.00 AMPERES MAXIMUM ON-STATE CURRENT, DC AND 21.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK PULSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.544 INCHES MAXIMUM
OVERALL LENGTH: 1.513 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 97942-588R849 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE,
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XT2104-601-19
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013956123
NSN
5961-01-395-6123
XT2104-601-19
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013956123
NSN
5961-01-395-6123
MFG
MITEL SEMICONDUCTOR AMERICANS INC
Description
CURRENT RATING PER CHARACTERISTIC: 13.50 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 16.00 AMPERES MAXIMUM ON-STATE CURRENT, DC AND 21.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 300.00 AMPERES MAXIMUM PEAK PULSE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.544 INCHES MAXIMUM
OVERALL LENGTH: 1.513 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.553 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION AND 40.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 30.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 97942-588R849 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE,
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459-655
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013956377
NSN
5961-01-395-6377
459-655
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013956377
NSN
5961-01-395-6377
MFG
ASCO SERVICES INC.
Description
RECTIFIER,SEMICONDUCTOR DEVICE
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JANTX1N4576A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956436
NSN
5961-01-395-6436
JANTX1N4576A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956436
NSN
5961-01-395-6436
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4576A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 457.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.08 MINIMUM REGULATOR VOLTAGE AND 6.72 MAXIMUM REGULATOR VOLTAGE
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IRKN26-08
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013956482
NSN
5961-01-395-6482
IRKN26-08
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013956482
NSN
5961-01-395-6482
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
IRGTI140U06
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013956483
NSN
5961-01-395-6483
IRGTI140U06
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013956483
NSN
5961-01-395-6483
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICES,UNITIZED
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352-0704-091
TRANSISTOR
NSN, MFG P/N
5961013956523
NSN
5961-01-395-6523
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: A13A1 DC-DC CONVERTER
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RL0256GAG011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956565
NSN
5961-01-395-6565
RL0256GAG011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956565
NSN
5961-01-395-6565
MFG
PERKINELMER ILLUMINATION INC D IV PERKINELMER ILLUMINATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
68-876-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956695
NSN
5961-01-395-6695
68-876-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013956695
NSN
5961-01-395-6695
MFG
ASTEC AMERICA INC .
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT USER SERVICE ROYAL NETHERLAND NAVY
III END ITEM IDENTIFICATION: PCB ASSEMBLY MODEL REV10X
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3-00391-301
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013957468
NSN
5961-01-395-7468
3-00391-301
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013957468
NSN
5961-01-395-7468
MFG
STANFORD RESEARCH SYSTEMS INC. DBA S R S
Description
MATERIAL: PLASTIC EPOXY
OVERALL DIAMETER: 0.189 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 2.287 INCHES MINIMUM AND 3.374 INCHES MAXIMUM
SPECIAL FEATURES: CASE:EPOXY MOLDED; WEIGHT:1.1 GRAM (APPROXIMATELY); FINISH:ALL EXTERNAL SURFACES CORROSION RESISTANT AND TERMINAL LEADS ARE READILY SOLDERABLE; LEAD TEMPERATURE FOR SOLDERING PURPOSE:260 DEGREE CELSIUS FOR 10 SECONDS; POLARITY:CATHODE INDICATED BY
~1: POLARITY BAND; IDEALLY SUITED FOR USE AS RECTIFIERS IN LOW-VOLTAGE, HIGH-FREQUENCY INVERTERS, FREE WHEELING DIODES, AND POLARITY PROTECTION DIODES; OPERATING TEMP:NEGATIVE 65 TO 150 DEGREE CELSIUS; SHIPPING:500 UNITS PER BAG
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91744559
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013957468
NSN
5961-01-395-7468
91744559
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013957468
NSN
5961-01-395-7468
MFG
THALES
Description
MATERIAL: PLASTIC EPOXY
OVERALL DIAMETER: 0.189 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 2.287 INCHES MINIMUM AND 3.374 INCHES MAXIMUM
SPECIAL FEATURES: CASE:EPOXY MOLDED; WEIGHT:1.1 GRAM (APPROXIMATELY); FINISH:ALL EXTERNAL SURFACES CORROSION RESISTANT AND TERMINAL LEADS ARE READILY SOLDERABLE; LEAD TEMPERATURE FOR SOLDERING PURPOSE:260 DEGREE CELSIUS FOR 10 SECONDS; POLARITY:CATHODE INDICATED BY
~1: POLARITY BAND; IDEALLY SUITED FOR USE AS RECTIFIERS IN LOW-VOLTAGE, HIGH-FREQUENCY INVERTERS, FREE WHEELING DIODES, AND POLARITY PROTECTION DIODES; OPERATING TEMP:NEGATIVE 65 TO 150 DEGREE CELSIUS; SHIPPING:500 UNITS PER BAG
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MBR360
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013957468
NSN
5961-01-395-7468
MBR360
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013957468
NSN
5961-01-395-7468
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
MATERIAL: PLASTIC EPOXY
OVERALL DIAMETER: 0.189 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 2.287 INCHES MINIMUM AND 3.374 INCHES MAXIMUM
SPECIAL FEATURES: CASE:EPOXY MOLDED; WEIGHT:1.1 GRAM (APPROXIMATELY); FINISH:ALL EXTERNAL SURFACES CORROSION RESISTANT AND TERMINAL LEADS ARE READILY SOLDERABLE; LEAD TEMPERATURE FOR SOLDERING PURPOSE:260 DEGREE CELSIUS FOR 10 SECONDS; POLARITY:CATHODE INDICATED BY
~1: POLARITY BAND; IDEALLY SUITED FOR USE AS RECTIFIERS IN LOW-VOLTAGE, HIGH-FREQUENCY INVERTERS, FREE WHEELING DIODES, AND POLARITY PROTECTION DIODES; OPERATING TEMP:NEGATIVE 65 TO 150 DEGREE CELSIUS; SHIPPING:500 UNITS PER BAG
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391-0353-140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013957495
NSN
5961-01-395-7495
391-0353-140
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013957495
NSN
5961-01-395-7495
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
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352-1109-012
TRANSISTOR
NSN, MFG P/N
5961013957498
NSN
5961-01-395-7498
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 150.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-580-6557 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 3.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 25.0 MAXIMUM COLLECTOR-TO-EMITTER, RESISTANCE BETWEEN BASE AND EMITTER_!!
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391-0922-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013957499
NSN
5961-01-395-7499
391-0922-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013957499
NSN
5961-01-395-7499
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-580-6557 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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352-7520-012
TRANSISTOR
NSN, MFG P/N
5961013957506
NSN
5961-01-395-7506
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -150.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
