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5961-01-364-9615
20 Products
8880100063-1
TRANSISTOR
NSN, MFG P/N
5961013649615
NSN
5961-01-364-9615
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
DESIGN CONTROL REFERENCE: 8880100063-1
III END ITEM IDENTIFICATION: AN/URN-25 FC3
MANUFACTURERS CODE: 57057
OVERALL HEIGHT: 1.470 INCHES NOMINAL
OVERALL LENGTH: 1.785 INCHES MINIMUM AND 1.815 INCHES MAXIMUM
OVERALL WIDTH: 0.985 INCHES MINIMUM AND 1.015 INCHES MAXIMUM
THE MANUFACTURERS DATA:
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CR89-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013650255
NSN
5961-01-365-0255
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2660449G001
TRANSISTOR
NSN, MFG P/N
5961013650678
NSN
5961-01-365-0678
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 300.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 1.950 INCHES NOMINAL
OVERALL WIDTH: 1.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 466.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 NOMINAL COLL
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LR-1003/TX
TRANSISTOR
NSN, MFG P/N
5961013650678
NSN
5961-01-365-0678
MFG
POWER TECH INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 AMPERES NOMINAL COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 300.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.600 INCHES MAXIMUM
OVERALL LENGTH: 1.950 INCHES NOMINAL
OVERALL WIDTH: 1.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 466.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
TRANSFER RATIO: 40.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 NOMINAL COLL
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2139893G001
TRANSISTOR
NSN, MFG P/N
5961013650679
NSN
5961-01-365-0679
MFG
ITT CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.06 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 10.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER A
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MM3117HX
TRANSISTOR
NSN, MFG P/N
5961013650679
NSN
5961-01-365-0679
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.06 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 10.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER A
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879192
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013650681
NSN
5961-01-365-0681
MFG
FLUKE CORPORATION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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DAC7-01954
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013650681
NSN
5961-01-365-0681
MFG
GIGA-TRONICS INCORPORATED
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.030 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.200 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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3131515G001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650682
NSN
5961-01-365-0682
3131515G001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650682
NSN
5961-01-365-0682
MFG
ITT CORPORATION
Description
SEMICONDUCTOR DEVICES,UNITIZED
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OM1255SCX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650682
NSN
5961-01-365-0682
OM1255SCX
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650682
NSN
5961-01-365-0682
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
SEMICONDUCTOR DEVICES,UNITIZED
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806646
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650683
NSN
5961-01-365-0683
806646
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650683
NSN
5961-01-365-0683
MFG
FLUKE CORPORATION
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 50.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
Related Searches:
BA483-143
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650683
NSN
5961-01-365-0683
BA483-143
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013650683
NSN
5961-01-365-0683
MFG
PHILIPS COMPONENTS
Description
COMPONENT NAME AND QUANTITY: 5 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 50.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.063 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 10 UNINSULATED WIRE LEAD
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41-9011-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013650884
NSN
5961-01-365-0884
41-9011-01
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013650884
NSN
5961-01-365-0884
MFG
SIGNAL TECHNOLOGY CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES FORWARD CURRENT, AVERAGE AND 2.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TURRET
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SA9803
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013650884
NSN
5961-01-365-0884
SA9803
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013650884
NSN
5961-01-365-0884
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES FORWARD CURRENT, AVERAGE AND 2.00 MICROAMPERES REVERSE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 4 TURRET
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86-890
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651104
NSN
5961-01-365-1104
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: G454481-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
G454481-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651104
NSN
5961-01-365-1104
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G454481-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
86-889
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651105
NSN
5961-01-365-1105
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: G454469-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
G454469-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651105
NSN
5961-01-365-1105
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: G454469-1
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 3B150
THE MANUFACTURERS DATA:
Related Searches:
G454470-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651106
NSN
5961-01-365-1106
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
DESIGN CONTROL REFERENCE: XT2116-12
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 25506
THE MANUFACTURERS DATA:
Related Searches:
XT2108-801-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651106
NSN
5961-01-365-1106
XT2108-801-17
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013651106
NSN
5961-01-365-1106
MFG
PERKINELMER ILLUMINATION INC
Description
DESIGN CONTROL REFERENCE: XT2116-12
III END ITEM IDENTIFICATION: TERMINAL DOPPLER WEATHER RADAR
MANUFACTURERS CODE: 25506
THE MANUFACTURERS DATA:
