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5961-01-342-3276
20 Products
5975-03-L00-9785
TRANSISTOR
NSN, MFG P/N
5961013423276
NSN
5961-01-342-3276
MFG
NAVAL MEDICAL MATERIAL SUPPORT COMMAND DETACHMENT
Description
DESIGN CONTROL REFERENCE: 61374
III END ITEM IDENTIFICATION: 6520-01-142-8228
MANUFACTURERS CODE: 13961
SPECIAL FEATURES: END ITEM APPLICATION SONIC PROPHYLAXIS UNIT,DENTAL,MODEL 2002
THE MANUFACTURERS DATA:
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2N4890
TRANSISTOR
NSN, MFG P/N
5961013420756
NSN
5961-01-342-0756
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
TN2905A
TRANSISTOR
NSN, MFG P/N
5961013420757
NSN
5961-01-342-0757
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
III END ITEM IDENTIFICATION: 6625-01-285-7241 MODULATOR PULSE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-237
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.135 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
OVERALL WIDTH: 0.195 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.594 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MINIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MINIMUM EMITTER TO BAS
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2N5326
TRANSISTOR
NSN, MFG P/N
5961013420758
NSN
5961-01-342-0758
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO:
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841370-1
TRANSISTOR
NSN, MFG P/N
5961013420758
NSN
5961-01-342-0758
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO:
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901022
TRANSISTOR
NSN, MFG P/N
5961013420758
NSN
5961-01-342-0758
MFG
BAE SYSTEMS INTEGRATED DEFENSE SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO:
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NSE 7003
TRANSISTOR
NSN, MFG P/N
5961013420758
NSN
5961-01-342-0758
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO:
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PST1335
TRANSISTOR
NSN, MFG P/N
5961013420758
NSN
5961-01-342-0758
MFG
OPTEK TECHNOLOGY INC
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
FUNCTION FOR WHICH DESIGNED: SWITCHING
III END ITEM IDENTIFICATION: TACTICAL AIR OPERATIONS CENTRAL AN/TYQ-23(V)1
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-59
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 0.975 INCHES MINIMUM AND 1.218 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 20.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
TRANSFER RATIO:
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703-247
TRANSISTOR
NSN, MFG P/N
5961013420759
NSN
5961-01-342-0759
MFG
EFRATOM TIME & FREQUENCY PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-126VAR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.090 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.280 INCHES MINIMUM AND 0.330 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: SHRINK FIT WIRE EXTENDERS,STRANDED,TEFLON; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 2.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 750.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RA
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013421013
NSN
5961-01-342-1013
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
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G000675-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013421014
NSN
5961-01-342-1014
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
ECG5305
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013421144
NSN
5961-01-342-1144
ECG5305
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013421144
NSN
5961-01-342-1144
MFG
PHILIPS ECG INC DIV OF NORTH AMERICAN PHILIPS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013421353
NSN
5961-01-342-1353
MFG
CRIMSON SEMICONDUCTOR INC
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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3400442-02
DIOD MODULE
NSN, MFG P/N
5961013422262
NSN
5961-01-342-2262
MFG
AMPEX DATA SYSTEMS CORP COMPUTER PRODUCTS DIV
Description
DIOD MODULE
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10068038
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013422638
NSN
5961-01-342-2638
10068038
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013422638
NSN
5961-01-342-2638
MFG
STORAGE TECHNOLOGY CORPORATION DBA STORAGETEK
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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STC010068038
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013422638
NSN
5961-01-342-2638
STC010068038
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013422638
NSN
5961-01-342-2638
MFG
GETRONICS GOVERNMENT SOLUTIONS LLC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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932570-0001
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013422810
NSN
5961-01-342-2810
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE SET
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SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013422810
NSN
5961-01-342-2810
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE SET
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STD1222
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013422810
NSN
5961-01-342-2810
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
S1010LS3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013422812
NSN
5961-01-342-2812
S1010LS3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013422812
NSN
5961-01-342-2812
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
III END ITEM IDENTIFICATION: 6625-01-285-7241 MODULATOR PULSE
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 100.0 MINIMUM REPETITIVE PEAK REVERSE VOLTAGE
