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5961-01-346-3957
20 Products
407257-1
TRANSISTOR
NSN, MFG P/N
5961013463957
NSN
5961-01-346-3957
MFG
TARGET CORPORATION DBA TARGET
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: N/FRN-43 & 45
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.236 INCHES NOMINAL
OVERALL LENGTH: 0.905 INCHES NOMINAL
OVERALL WIDTH: 0.387 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MINIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, DC
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AB/1/30/8812
TRANSISTOR
NSN, MFG P/N
5961013461237
NSN
5961-01-346-1237
MFG
BAE SYSTEMS GLOBAL COMBAT SYSTEMS LIMITED
Description
TRANSISTOR
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IRFG1Z0
TRANSISTOR
NSN, MFG P/N
5961013461237
NSN
5961-01-346-1237
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
Related Searches:
IRFG5110
TRANSISTOR
NSN, MFG P/N
5961013461323
NSN
5961-01-346-1323
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.808 INCHES MAXIMUM
OVERALL WIDTH: 0.320 INCHES MAXIMUM
SPECIAL FEATURES: AAH
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100890-001
TRANSISTOR
NSN, MFG P/N
5961013461722
NSN
5961-01-346-1722
MFG
EFRATOM TIME & FREQUENCY PRODUCTS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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TP0602N2
TRANSISTOR
NSN, MFG P/N
5961013461722
NSN
5961-01-346-1722
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -2.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -20.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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135892
TRANSISTOR
NSN, MFG P/N
5961013461723
NSN
5961-01-346-1723
MFG
FLUKE CORPORATION
Description
TRANSISTOR
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5322 130 44015
TRANSISTOR
NSN, MFG P/N
5961013461723
NSN
5961-01-346-1723
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
TRANSISTOR
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BFW16A
TRANSISTOR
NSN, MFG P/N
5961013461723
NSN
5961-01-346-1723
MFG
BRITISH SAROZAL LTD
Description
TRANSISTOR
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6N516PC7
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013461724
NSN
5961-01-346-1724
MFG
EATON AEROSPACE LLC DIV ELECTRICAL SENSING & CONTROLS
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KDP374B
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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6N520PC8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013461724
NSN
5961-01-346-1724
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KDP374B
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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HLMP-1401
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013461724
NSN
5961-01-346-1724
MFG
AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: KDP374B
MANUFACTURERS CODE: 02750
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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G309036-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013461725
NSN
5961-01-346-1725
G309036-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013461725
NSN
5961-01-346-1725
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTA
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USD3065
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013461725
NSN
5961-01-346-1725
USD3065
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013461725
NSN
5961-01-346-1725
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 500.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTA
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150-028192-004
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013461932
NSN
5961-01-346-1932
150-028192-004
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013461932
NSN
5961-01-346-1932
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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8507002-144
TRANSISTOR
NSN, MFG P/N
5961013462338
NSN
5961-01-346-2338
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/564 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8507002 DRAWING
VOLT
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JANTXV2N6849
TRANSISTOR
NSN, MFG P/N
5961013462338
NSN
5961-01-346-2338
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES MAXIMUM DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/564 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 07187-8507002 DRAWING
VOLT
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FBL-00-262
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013463607
NSN
5961-01-346-3607
FBL-00-262
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013463607
NSN
5961-01-346-3607
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
Related Searches:
MBR6545
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013463607
NSN
5961-01-346-3607
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-5
Related Searches:
407257-1-C
TRANSISTOR
NSN, MFG P/N
5961013463957
NSN
5961-01-346-3957
MFG
CARDION INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: N/FRN-43 & 45
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.236 INCHES NOMINAL
OVERALL LENGTH: 0.905 INCHES NOMINAL
OVERALL WIDTH: 0.387 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MINIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, DC
