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5961-01-356-1469
20 Products
5495885
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013561469
NSN
5961-01-356-1469
5495885
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013561469
NSN
5961-01-356-1469
MFG
NAVAL SEA SYSTEMS COMMAND
Description
MAJOR COMPONENTS: DIODE 3; PWB 1
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BP15806
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013561469
NSN
5961-01-356-1469
BP15806
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013561469
NSN
5961-01-356-1469
MFG
BURKE PRODUCTS INC.
Description
MAJOR COMPONENTS: DIODE 3; PWB 1
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132AA7119
TRANSISTOR
NSN, MFG P/N
5961013562115
NSN
5961-01-356-2115
MFG
ASSOCIATED AIRCRAFT MANUFACTURING AND SALES INC
Description
III END ITEM IDENTIFICATION: RO-32/ASC CHART RECORDER
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7555161P0601
TRANSISTOR
NSN, MFG P/N
5961013562350
NSN
5961-01-356-2350
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.0177 INCHES NOMINAL
OVERALL WIDTH: 0.0157 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.5 MAXIMUM GATE TO SOURCE VOLTAGE
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NE71000VC GE601
TRANSISTOR
NSN, MFG P/N
5961013562350
NSN
5961-01-356-2350
MFG
CALIFORNIA EASTERN LABS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.0177 INCHES NOMINAL
OVERALL WIDTH: 0.0157 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.5 MAXIMUM GATE TO SOURCE VOLTAGE
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NH7555161P01
TRANSISTOR
NSN, MFG P/N
5961013562350
NSN
5961-01-356-2350
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.0177 INCHES NOMINAL
OVERALL WIDTH: 0.0157 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.5 MAXIMUM GATE TO SOURCE VOLTAGE
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7555161P0607
TRANSISTOR
NSN, MFG P/N
5961013562351
NSN
5961-01-356-2351
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.0177 INCHES NOMINAL
OVERALL WIDTH: 0.0157 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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NE71000VC GE607
TRANSISTOR
NSN, MFG P/N
5961013562351
NSN
5961-01-356-2351
MFG
CALIFORNIA EASTERN LABS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.0177 INCHES NOMINAL
OVERALL WIDTH: 0.0157 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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NH7555161P607
TRANSISTOR
NSN, MFG P/N
5961013562351
NSN
5961-01-356-2351
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 120.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.0177 INCHES NOMINAL
OVERALL WIDTH: 0.0157 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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7555798P0611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
7555798P0611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCEN
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JANTXV1N965B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
JANTXV1N965B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCEN
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MOT965B-611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MOT965B-611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCEN
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MSC965B-611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MSC965B-611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCEN
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NH7555798P611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
NH7555798P611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013562352
NSN
5961-01-356-2352
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 8.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCEN
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2808914-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
2808914-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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GZ84318A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
GZ84318A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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NH2808914-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
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NH2808914-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013562354
NSN
5961-01-356-2354
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DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
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IRFK6H150
TRANSISTOR
NSN, MFG P/N
5961013562786
NSN
5961-01-356-2786
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
TRANSISTOR
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999306-002
TRANSISTOR
NSN, MFG P/N
5961013562788
NSN
5961-01-356-2788
MFG
L-3 SERVICES INC.
Description
TRANSISTOR
