My Quote Request
No products added yet
5961-01-418-7832
20 Products
147585
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014187832
NSN
5961-01-418-7832
147585
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014187832
NSN
5961-01-418-7832
MFG
UNISON INDUSTRIES LLC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
875901
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187834
NSN
5961-01-418-7834
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4P404-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187834
NSN
5961-01-418-7834
MA4P404-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187834
NSN
5961-01-418-7834
MFG
SIGNAL TECHNOLOGY CORPORATION DBA STC MICROWAVE SYSTEMS DIV SIGNAL TECHNOLOGY CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1.5KE10CA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187839
NSN
5961-01-418-7839
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.00 MINIMUM BREAKDOWN VOLTAGE, DC AND 11.00 MAXIMUM BREAKDOWN VOLTAGE, DC AND 8.55 NOMINAL REVERSE SUPRESSION VOLTAGE
Related Searches:
875757
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187839
NSN
5961-01-418-7839
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.00 MINIMUM BREAKDOWN VOLTAGE, DC AND 11.00 MAXIMUM BREAKDOWN VOLTAGE, DC AND 8.55 NOMINAL REVERSE SUPRESSION VOLTAGE
Related Searches:
331090
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187840
NSN
5961-01-418-7840
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
SS6252
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014187840
NSN
5961-01-418-7840
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
IRFU9120
TRANSISTOR
NSN, MFG P/N
5961014188045
NSN
5961-01-418-8045
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
IRFU120
TRANSISTOR
NSN, MFG P/N
5961014188046
NSN
5961-01-418-8046
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRFD020
TRANSISTOR
NSN, MFG P/N
5961014188048
NSN
5961-01-418-8048
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
IRFP450FI
TRANSISTOR
NSN, MFG P/N
5961014188049
NSN
5961-01-418-8049
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
IXFM26N45
TRANSISTOR
NSN, MFG P/N
5961014188088
NSN
5961-01-418-8088
MFG
IXYS CORPORATION
Description
TRANSISTOR
Related Searches:
IXTM26N50
TRANSISTOR
NSN, MFG P/N
5961014188089
NSN
5961-01-418-8089
MFG
IXYS CORPORATION
Description
TRANSISTOR
Related Searches:
JANTX1N6313
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188412
NSN
5961-01-418-8412
JANTX1N6313
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188412
NSN
5961-01-418-8412
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CAPACITANCE RATING IN PICOFARADS: 1600.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 117.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6313
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/533
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/533 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHA
Related Searches:
JANTX1N6628
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188415
NSN
5961-01-418-8415
JANTX1N6628
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188415
NSN
5961-01-418-8415
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6628
III END ITEM IDENTIFICATION: 1260-01-208-6448
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/590
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.137 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/590 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE_!
Related Searches:
JANTXV1N4614-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188432
NSN
5961-01-418-8432
JANTXV1N4614-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188432
NSN
5961-01-418-8432
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4614-1
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL DIAMETER: 0.055 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/435 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN
Related Searches:
874024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188454
NSN
5961-01-418-8454
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
211214
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188455
NSN
5961-01-418-8455
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
211263
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188456
NSN
5961-01-418-8456
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
211305
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014188457
NSN
5961-01-418-8457
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
