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5961-01-422-7396
20 Products
101335-1
TRANSISTOR
NSN, MFG P/N
5961014227396
NSN
5961-01-422-7396
MFG
RANTEC POWER SYSTEMS INC
Description
TRANSISTOR
Related Searches:
2001073-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227397
NSN
5961-01-422-7397
2001073-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227397
NSN
5961-01-422-7397
MFG
HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
TEST DATA DOCUMENT: 66948-2001073 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
86-900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227397
NSN
5961-01-422-7397
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
TEST DATA DOCUMENT: 66948-2001073 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5000.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
342A9600P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227398
NSN
5961-01-422-7398
342A9600P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227398
NSN
5961-01-422-7398
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.201 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 89954-342A9600 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
95-5080
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227398
NSN
5961-01-422-7398
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.201 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 89954-342A9600 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX1N6391
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227398
NSN
5961-01-422-7398
JANTX1N6391
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227398
NSN
5961-01-422-7398
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.201 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 89954-342A9600 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
USD-4058
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227398
NSN
5961-01-422-7398
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 1.201 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 89954-342A9600 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
878744
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227404
NSN
5961-01-422-7404
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BAS28
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227404
NSN
5961-01-422-7404
MFG
PHILIPS FRANCE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
131297
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
MFG
FLUKE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
5322 130 32739
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
5322 130 32739
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
9335 169 40212
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
9335 169 40212
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
MFG
FLUKE NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C3V0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
BZX84-C3V0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227405
NSN
5961-01-422-7405
MFG
PHILIPS COMPONENTS
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
874011
TRANSISTOR
NSN, MFG P/N
5961014227406
NSN
5961-01-422-7406
MFG
FLUKE CORPORATION
Description
TRANSISTOR
Related Searches:
BF410C
TRANSISTOR
NSN, MFG P/N
5961014227406
NSN
5961-01-422-7406
MFG
PHILIPS COMPONENTS
Description
TRANSISTOR
Related Searches:
1902-1424
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
MFG
HEWLETT PACKARD CO
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
4822 130 80125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
4822 130 80125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
861430
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
MFG
FLUKE CORPORATION
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
9331 374 00212
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
9331 374 00212
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
MFG
FLUKE NEDERLAND BV
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C5V6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
BZX84-C5V6
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014227407
NSN
5961-01-422-7407
MFG
PHILIPS COMPONENTS
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
