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5961-01-464-7831
20 Products
850-338-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014647831
NSN
5961-01-464-7831
850-338-006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014647831
NSN
5961-01-464-7831
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
III END ITEM IDENTIFICATION: C-17A ACFT
Related Searches:
583898
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014647887
NSN
5961-01-464-7887
MFG
BRP US INC.
Description
DESIGN CONTROL REFERENCE: 583898
III END ITEM IDENTIFICATION: P/N M175FPXEEN OUTBOARD ENGINE ONBOARD 25 FT PSU COAST GUARD VESSELS
MANUFACTURERS CODE: 1UVT5
SPECIAL FEATURES: DIODE KIT
THE MANUFACTURERS DATA:
Related Searches:
700859
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014648139
NSN
5961-01-464-8139
MFG
SLOAN COMPANY THE DBA SLOAN LED
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.600 MILLIMETERS MAXIMUM
OVERALL WIDTH: 0.250 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BRASS, NICKEL-PLATED
TERMINAL TYPE AND QUANTITY: 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM BASE SUPPLY VOLTAGE
Related Searches:
38000-5TX
TRANSISTOR
NSN, MFG P/N
5961014648558
NSN
5961-01-464-8558
MFG
TRANSISTOR DEVICES INC . DBA TDI POWER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.350 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 09004-38000 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IXTL250-TX
TRANSISTOR
NSN, MFG P/N
5961014648558
NSN
5961-01-464-8558
MFG
IXYS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.350 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 09004-38000 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
MHM25N20-TX
TRANSISTOR
NSN, MFG P/N
5961014648558
NSN
5961-01-464-8558
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.350 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 09004-38000 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
OM1895SAT
TRANSISTOR
NSN, MFG P/N
5961014648558
NSN
5961-01-464-8558
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 1.350 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 09004-38000 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
JANTXV1N6143A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014648911
NSN
5961-01-464-8911
JANTXV1N6143A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014648911
NSN
5961-01-464-8911
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 15.60 NANOAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6143A
III END ITEM IDENTIFICATION: AIRCRAFT, AIRLIFTER C-17A
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500/5168
OVERALL LENGTH: 37.720 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 4.700 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 10.4 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
199-APT601R3KN
TRANSISTOR
NSN, MFG P/N
5961014649084
NSN
5961-01-464-9084
MFG
MILPAR INC
Description
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: C130 PWR UNIT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ABSOLUTE MAX POWER DISS. 125 WATTS. MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 30.0 NOMINAL GATE TO SOURCE VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
APT601R3KN
TRANSISTOR
NSN, MFG P/N
5961014649084
NSN
5961-01-464-9084
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 6.50 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: C130 PWR UNIT
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.560 INCHES MINIMUM AND 0.625 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ABSOLUTE MAX POWER DISS. 125 WATTS. MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 30.0 NOMINAL GATE TO SOURCE VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
123-MUR190E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649091
NSN
5961-01-464-9091
123-MUR190E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649091
NSN
5961-01-464-9091
MFG
MILPAR INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: C130 POWER UNIT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MAX OPERATING TEMP 175 DEG CELCIUS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
MUR180E
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649091
NSN
5961-01-464-9091
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III END ITEM IDENTIFICATION: C130 POWER UNIT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.106 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MAX OPERATING TEMP 175 DEG CELCIUS
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
121-DSE160-08A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649100
NSN
5961-01-464-9100
121-DSE160-08A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649100
NSN
5961-01-464-9100
MFG
MILPAR INC
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 14.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 60.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: C130 PWR UNIT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.776 MILLIMETERS MINIMUM AND 0.799 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MAX OPERATING TEMP 150 DEG CELCIUS
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1.8 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
DSEI60-08A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649100
NSN
5961-01-464-9100
DSEI60-08A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014649100
NSN
5961-01-464-9100
MFG
IXYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC AND 14.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 60.00 AMPERES MAXIMUM FORWARD CURRENT, DC
III END ITEM IDENTIFICATION: C130 PWR UNIT
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.776 MILLIMETERS MINIMUM AND 0.799 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MAX OPERATING TEMP 150 DEG CELCIUS
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1.8 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
25135-A-2-B-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014649590
NSN
5961-01-464-9590
25135-A-2-B-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014649590
NSN
5961-01-464-9590
MFG
MCNAB INCORPORATED
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
AA421958G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014651602
NSN
5961-01-465-1602
AA421958G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014651602
NSN
5961-01-465-1602
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ELECTRONIC SYSTEMS
Description
III END ITEM IDENTIFICATION: ARSR4
Related Searches:
LLL-4223
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014652637
NSN
5961-01-465-2637
LLL-4223
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014652637
NSN
5961-01-465-2637
MFG
REFAC ELECTRONICS CORP
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: PRESS FIT
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
LTL-4223
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014652637
NSN
5961-01-465-2637
LTL-4223
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014652637
NSN
5961-01-465-2637
MFG
LITEON INC
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: PRESS FIT
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
197-IXSH35N100A
TRANSISTOR
NSN, MFG P/N
5961014652841
NSN
5961-01-465-2841
MFG
MILPAR INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: C130 PWR UNIT
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.8 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MAXIMUM POWER DISS. 300 WATTS. MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS.
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 7.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
IXSH35N100A
TRANSISTOR
NSN, MFG P/N
5961014652841
NSN
5961-01-465-2841
MFG
IXYS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES NOMINAL DRAIN CURRENT
III END ITEM IDENTIFICATION: C130 PWR UNIT
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.8 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MAXIMUM POWER DISS. 300 WATTS. MINIMUM OPERATING TEMP -55 DEGREES CELCIUS. MAXIMUM OPERATING TEMP 150 DEGREES CELCIUS.
TERMINAL TYPE AND QUANTITY: 3 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL DRAIN TO SOURCE VOLTAGE AND 20.0 NOMINAL GATE TO SOURCE VOLTAGE AND 3.5 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 7.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
