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5961-00-356-3555
20 Products
0771-5010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
0771-5010
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
JAIDINGER MFG. CO. INC. DBA JAICO PRODUCTS
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
822747
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
8879000054-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
8879000054-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
IN4005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
MFG
EATON AEROSPACE LLC DBA STERER ENGINEERING DIV VALVE & ACTUATOR
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JAN 1N 4005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
JAN 1N 4005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
JAN1N3613
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003562978
NSN
5961-00-356-2978
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3613
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/228
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/228 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.600 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
152-0200-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003563189
NSN
5961-00-356-3189
152-0200-00
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003563189
NSN
5961-00-356-3189
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
DESIGN CONTROL REFERENCE: SDA10075
MAJOR COMPONENTS: DIODE 4
MANUFACTURERS CODE: 04713
MOUNTING CONFIGURATION: FOUR WIRE LEADS 1.500IN. LG 0.035IN. DIA
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.630 INCHES NOMINAL
OVERALL WIDTH: 0.565 INCHES NOMINAL
TEST DATA DOCUMENT: 80009-152-0200-00 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
SDA10075
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003563189
NSN
5961-00-356-3189
SDA10075
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961003563189
NSN
5961-00-356-3189
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: SDA10075
MAJOR COMPONENTS: DIODE 4
MANUFACTURERS CODE: 04713
MOUNTING CONFIGURATION: FOUR WIRE LEADS 1.500IN. LG 0.035IN. DIA
OVERALL HEIGHT: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.630 INCHES NOMINAL
OVERALL WIDTH: 0.565 INCHES NOMINAL
TEST DATA DOCUMENT: 80009-152-0200-00 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
1T506200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
1T506200
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
SOUTHERN AVIONICS CO.
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N5062
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
2N5062
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2N5062A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
2N5062A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
ADELCO ELEKTRONIK GMBH
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
322-7243P3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
322-7243P3
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
415/4/02864/001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
415/4/02864/001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
742643
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
742643
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003563555
NSN
5961-00-356-3555
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE5555 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 125.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1019816-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003564148
NSN
5961-00-356-4148
1019816-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003564148
NSN
5961-00-356-4148
MFG
ANACOMP INC.
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MV6016
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003564148
NSN
5961-00-356-4148
MFG
MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
UZ9154
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003564148
NSN
5961-00-356-4148
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM BREAKDOWN VOLTAGE, DC
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2N4092
TRANSISTOR
NSN, MFG P/N
5961003564184
NSN
5961-00-356-4184
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM PEAK-POINT VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4
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SM-B-525042
TRANSISTOR
NSN, MFG P/N
5961003564184
NSN
5961-00-356-4184
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-18
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.0 MAXIMUM PEAK-POINT VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 4
Related Searches:
JANTX1N4948
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003564360
NSN
5961-00-356-4360
JANTX1N4948
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003564360
NSN
5961-00-356-4360
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 0.25 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4948
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/359
OVERALL DIAMETER: 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-C-19500/359 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
