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5961-00-090-7222
20 Products
373432-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
373432-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
536044-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000897937
NSN
5961-00-089-7937
MFG
DATACARD CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
446F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000898170
NSN
5961-00-089-8170
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
446FDIODE
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000898170
NSN
5961-00-089-8170
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.135 INCHES MAXIMUM
OVERALL LENGTH: 0.400 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
12N
TRANSISTOR
NSN, MFG P/N
5961000898171
NSN
5961-00-089-8171
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.468 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
12NTRANSISTOR
TRANSISTOR
NSN, MFG P/N
5961000898171
NSN
5961-00-089-8171
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.468 INCHES NOMINAL
OVERALL LENGTH: 0.560 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
723060-035
TRANSISTOR
NSN, MFG P/N
5961000899127
NSN
5961-00-089-9127
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
PT3501
TRANSISTOR
NSN, MFG P/N
5961000899127
NSN
5961-00-089-9127
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
K715
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
K715
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
MFG
SOLITRON DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
SA4174
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
SA4174
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
SDA251
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
SDA251
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
MFG
SOLID STATE DEVICES INC.
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
SEN-B-90
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
SEN-B-90
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907222
NSN
5961-00-090-7222
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
Related Searches:
SC3BA2M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907224
NSN
5961-00-090-7224
SC3BA2M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907224
NSN
5961-00-090-7224
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
SG7941
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907224
NSN
5961-00-090-7224
SG7941
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961000907224
NSN
5961-00-090-7224
MFG
SEMTECH CORPORATION
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
00-875-121-079
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000919328
NSN
5961-00-091-9328
00-875-121-079
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000919328
NSN
5961-00-091-9328
MFG
ALLIS-CHALMERS CORP
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 4.000 OUNCES
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.169 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
70C80B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000919328
NSN
5961-00-091-9328
70C80B
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000919328
NSN
5961-00-091-9328
MFG
MICROSEMI CORP-COLORADO
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 4.000 OUNCES
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.169 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
C150N
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000919328
NSN
5961-00-091-9328
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 4.000 OUNCES
CURRENT RATING PER CHARACTERISTIC: 110.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 8.169 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
Related Searches:
308439
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920507
NSN
5961-00-092-0507
MFG
TELEMECHANICS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
323606
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000920508
NSN
5961-00-092-0508
MFG
TELEMECHANICS INC
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
472-0545-008
TRANSISTOR
NSN, MFG P/N
5961000920518
NSN
5961-00-092-0518
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: -100.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND -500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.4 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DESIGN ANALYSIS; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-
