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5961-01-154-7372

20 Products

43A328-12

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011547372

NSN

5961-01-154-7372

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43A328-12

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011547372

NSN

5961-01-154-7372

MFG

POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP

4872931606

TRANSISTOR

NSN, MFG P/N

5961011547357

NSN

5961-01-154-7357

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4872931606

TRANSISTOR

NSN, MFG P/N

5961011547357

NSN

5961-01-154-7357

MFG

TEAC CORPORATION

10-381351

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547360

NSN

5961-01-154-7360

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10-381351

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547360

NSN

5961-01-154-7360

MFG

UNISON INDUSTRIES LLC

1N4720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547360

NSN

5961-01-154-7360

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1N4720

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547360

NSN

5961-01-154-7360

MFG

AMPHENOL CORPORATION DBA AMPHENOL AEROSPACE INDUSTRIAL

10-381888

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547361

NSN

5961-01-154-7361

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10-381888

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547361

NSN

5961-01-154-7361

MFG

UNISON INDUSTRIES LLC

DZ710929C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547361

NSN

5961-01-154-7361

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DZ710929C

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547361

NSN

5961-01-154-7361

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

MSZ-M-20006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547361

NSN

5961-01-154-7361

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MSZ-M-20006

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011547361

NSN

5961-01-154-7361

MFG

FREESCALE SEMICONDUCTOR INC.

463133

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961011547362

NSN

5961-01-154-7362

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463133

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961011547362

NSN

5961-01-154-7362

MFG

FLUKE CORPORATION

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

C388N

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011547372

NSN

5961-01-154-7372

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C388N

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011547372

NSN

5961-01-154-7372

MFG

GENERAL ELECTRIC CO OUTDOOR BREAKER BUSINESS SECTION

P3211

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011548286

NSN

5961-01-154-8286

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P3211

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011548286

NSN

5961-01-154-8286

MFG

STORED ENERGY SYSTEMS A LIMITED LIABILITY COMPANY DBA S E N S A LIMITED LIABILITY COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 165.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: SKN130/02
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 58687
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.265 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

SKN130/02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011548286

NSN

5961-01-154-8286

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SKN130/02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011548286

NSN

5961-01-154-8286

MFG

SEMIKRON INTL INC

Description

CURRENT RATING PER CHARACTERISTIC: 165.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: SKN130/02
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 58687
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.265 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.062 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

CC5647

TRANSISTOR

NSN, MFG P/N

5961011550840

NSN

5961-01-155-0840

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CC5647

TRANSISTOR

NSN, MFG P/N

5961011550840

NSN

5961-01-155-0840

MFG

PHILIPS SEMICONDUCTORS INC

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.219 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

M1041

TRANSISTOR

NSN, MFG P/N

5961011550840

NSN

5961-01-155-0840

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M1041

TRANSISTOR

NSN, MFG P/N

5961011550840

NSN

5961-01-155-0840

MFG

SOLITRON DEVICES INC.

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.219 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

PC73579-2

TRANSISTOR

NSN, MFG P/N

5961011550840

NSN

5961-01-155-0840

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PC73579-2

TRANSISTOR

NSN, MFG P/N

5961011550840

NSN

5961-01-155-0840

MFG

ROCKWELL COLLINS AEROSPACE & ELECTRONICS INC. DBA RC DISPLAYS SYSTEMS

Description

INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.219 INCHES NOMINAL
OVERALL LENGTH: 0.219 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD

10-381065

TRANSISTOR

NSN, MFG P/N

5961011550842

NSN

5961-01-155-0842

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10-381065

TRANSISTOR

NSN, MFG P/N

5961011550842

NSN

5961-01-155-0842

MFG

UNISON INDUSTRIES LLC

MJ15001

TRANSISTOR

NSN, MFG P/N

5961011550842

NSN

5961-01-155-0842

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MJ15001

TRANSISTOR

NSN, MFG P/N

5961011550842

NSN

5961-01-155-0842

MFG

FREESCALE SEMICONDUCTOR INC.

720602-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011550845

NSN

5961-01-155-0845

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720602-8

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011550845

NSN

5961-01-155-0845

MFG

RAYTHEON COMPANY DBA RAYTHEON

C380C

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011550846

NSN

5961-01-155-0846

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C380C

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961011550846

NSN

5961-01-155-0846

MFG

POWEREX INC

Description

CURRENT RATING PER CHARACTERISTIC: 3500.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
OVERALL DIAMETER: 1.600 INCHES MINIMUM AND 1.656 INCHES MAXIMUM
OVERALL LENGTH: 0.515 INCHES MINIMUM AND 0.565 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 2.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 CASE AND 1 QUICK DISCONNECT, MALE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 300.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

50240113

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011550849

NSN

5961-01-155-0849

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50240113

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011550849

NSN

5961-01-155-0849

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205

50240800

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011550850

NSN

5961-01-155-0850

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50240800

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961011550850

NSN

5961-01-155-0850

MFG

SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205