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5961-01-069-4041
20 Products
20A400VPBT40
RECTIFIER
NSN, MFG P/N
5961010694041
NSN
5961-01-069-4041
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
RECTIFIER
Related Searches:
40V0000015
TRANSISTOR
NSN, MFG P/N
5961010694197
NSN
5961-01-069-4197
MFG
TEAC CORPORATION
Description
DESIGN CONTROL REFERENCE: 40V0000015
III END ITEM IDENTIFICATION: AUDIO/VIDEO RECORDING SYSTEM,,,,RD-399/AXQ - RD-400/GXQ - RP-222/GXQ
MANUFACTURERS CODE: S0631
THE MANUFACTURERS DATA:
Related Searches:
437723
TRANSISTOR
NSN, MFG P/N
5961010694198
NSN
5961-01-069-4198
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 89536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 437723
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.115 INCHES MINIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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MPS-A42
TRANSISTOR
NSN, MFG P/N
5961010694198
NSN
5961-01-069-4198
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 89536
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 437723
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.115 INCHES MINIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.016 INCHES MINIMUM AND 0.021 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 MILLIMETERS NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
Related Searches:
2N6569
TRANSISTOR
NSN, MFG P/N
5961010694505
NSN
5961-01-069-4505
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM BASE CURRENT, DC AND 12.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE6595 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHAR
Related Searches:
334-303
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694898
NSN
5961-01-069-4898
MFG
CMC ELECTRONICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SM-A-763921-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694898
NSN
5961-01-069-4898
SM-A-763921-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694898
NSN
5961-01-069-4898
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
50101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
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8A1033
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
COMMUNICATIONS & POWER INDUSTRIES INC DBA CPI DIV BEVERLY MICROWAVE DIVISION
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
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DVA6963-98
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
DVA6963-98
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
SKYWORKS SOLUTIONS INC.
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
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MA-4060B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
WAGNER BROS INC
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
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MA4060B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
PH4060B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
PARAMETRIC INDUSTRIES INC
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
SM-A-763921-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
SM-A-763921-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010694899
NSN
5961-01-069-4899
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: METAL AND CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.290 INCHES MAXIMUM
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
28463-31007
TRANSISTOR
NSN, MFG P/N
5961010694989
NSN
5961-01-069-4989
MFG
SELEX GALILEO LTD
Description
TRANSISTOR
Related Searches:
28463-44601
TRANSISTOR
NSN, MFG P/N
5961010694989
NSN
5961-01-069-4989
MFG
MARCONI AVIONICS LTD
Description
TRANSISTOR
Related Searches:
2N5015
TRANSISTOR
NSN, MFG P/N
5961010694989
NSN
5961-01-069-4989
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
TRANSISTOR
Related Searches:
D87B0003
TRANSISTOR
NSN, MFG P/N
5961010694989
NSN
5961-01-069-4989
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS ELECTRONIC SYSTEMS CO
Description
TRANSISTOR
Related Searches:
55002A7727-1
TRANSISTOR
NSN, MFG P/N
5961010694990
NSN
5961-01-069-4990
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WHIDBEY ISLAND CLASS LSD; ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); WASP CLASS LHD; SUPPLY CLASS AOE; RADIO SET (A1815) (AN/GRC-193); RADIO SET (AN/PRC-104); NIMITZ CLASS CVN; RADIO SET (AN/MRC-138); AIRBORN MOBILE DIR AIR SPT CTL (2ID), 02M
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.428 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER
Related Searches:
755002A7727
TRANSISTOR
NSN, MFG P/N
5961010694990
NSN
5961-01-069-4990
MFG
QUARTERMASTER GENERAL
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WHIDBEY ISLAND CLASS LSD; ENGINE, AIRCRAFT TF33-PW-102 (C-135E, EC-135H/K/P); WASP CLASS LHD; SUPPLY CLASS AOE; RADIO SET (A1815) (AN/GRC-193); RADIO SET (AN/PRC-104); NIMITZ CLASS CVN; RADIO SET (AN/MRC-138); AIRBORN MOBILE DIR AIR SPT CTL (2ID), 02M
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.071 INCHES MAXIMUM
OVERALL LENGTH: 0.268 INCHES NOMINAL
OVERALL WIDTH: 0.428 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN; WEAPON SYSTEM ESSENTIAL
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER
