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5961-01-174-3002
20 Products
3130083G004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743002
NSN
5961-01-174-3002
3130083G004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743002
NSN
5961-01-174-3002
MFG
ITT CORPORATION
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC (2GVORTAC)
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.161 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER: 0.015 INCHES NOMINAL
TERMINAL LENGTH: 1.070 INCHES NOMINAL
Related Searches:
5917040
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011741221
NSN
5961-01-174-1221
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
849-043-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011741221
NSN
5961-01-174-1221
849-043-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011741221
NSN
5961-01-174-1221
MFG
PARKER-HANNIFIN CORPORATION DBA CUSTOMER SUPPORT MILITARY DIVISION DIV CUSTOMER SUPPORT OPERATIONS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-41
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 48.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
1N5686B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011741222
NSN
5961-01-174-1222
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CAPACITANCE RATING IN PICOFARADS: 18.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, DC AND 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6283A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N5694B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011741223
NSN
5961-01-174-1223
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CAPACITANCE RATING IN PICOFARADS: 82.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, DC AND 0.02 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VARACTOR DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE6283A PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N5996B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011741224
NSN
5961-01-174-1224
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6559 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
Related Searches:
1A6713-2TX
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
1A6713-2TX
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
MFG
GE AVIATIONS SYSTEMS LLC DBA GE AVIATION DIV ELECTRICAL POWER-POMPANO
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
5254-394
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
5254-394
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
SA8095
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
SA8095
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
SEN-B-255
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
SEN-B-255
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961011741341
NSN
5961-01-174-1341
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.800 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
Related Searches:
G390308S1
TRANSISTOR
NSN, MFG P/N
5961011742771
NSN
5961-01-174-2771
MFG
ITT CORPORATION DBA ITT GILFILLAN
Description
TRANSISTOR
Related Searches:
STI-804
TRANSISTOR
NSN, MFG P/N
5961011742771
NSN
5961-01-174-2771
MFG
SEMICONDUCTOR TECHNOLOGY INC DBA S T I
Description
TRANSISTOR
Related Searches:
JS-586
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011742774
NSN
5961-01-174-2774
MFG
C AND D BATTERIES AN ALLIED CO PLANT 1
Description
FEATURES PROVIDED: MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL AND GLASS
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.357 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.682 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNTHREADED HOLE
THREAD SERIES DESIGNATOR: UNF
Related Searches:
5066338-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011742776
NSN
5961-01-174-2776
MFG
SIGNALS WARFARE PROJECT MANAGER
Description
III END ITEM IDENTIFICATION: TERMINAL,COMMUNICATION AN/GSC-46
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.138 INCHES
OVERALL LENGTH: 4.500 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
THREAD SERIES DESIGNATOR: UNC
Related Searches:
1902-9625
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011742778
NSN
5961-01-174-2778
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
3130083G005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743000
NSN
5961-01-174-3000
3130083G005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743000
NSN
5961-01-174-3000
MFG
ITT CORPORATION
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC (2GVORTAC)
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.162 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
Related Searches:
DP1005A11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743000
NSN
5961-01-174-3000
MFG
SDI INC
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC (2GVORTAC)
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.162 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
Related Searches:
DP10220-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743000
NSN
5961-01-174-3000
DP10220-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743000
NSN
5961-01-174-3000
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC (2GVORTAC)
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.162 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES NOMINAL
Related Searches:
3130083G003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743001
NSN
5961-01-174-3001
3130083G003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743001
NSN
5961-01-174-3001
MFG
ITT CORPORATION
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC(2GVORTAC)
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
TERMINAL LENGTH: 1.086 INCHES NOMINAL
Related Searches:
DP10211-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743001
NSN
5961-01-174-3001
DP10211-011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011743001
NSN
5961-01-174-3001
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
III END ITEM IDENTIFICATION: 2 GENERATION VORTAC(2GVORTAC)
INCLOSURE MATERIAL: PLASTIC
OVERALL DIAMETER: 0.072 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
TERMINAL LENGTH: 1.086 INCHES NOMINAL
