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5961-01-349-9021
20 Products
61205-90064
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013499021
NSN
5961-01-349-9021
61205-90064
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013499021
NSN
5961-01-349-9021
MFG
AAI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MINIMUM AND 0.3 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.026 INCHES MINIMUM AND 0.028 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 NOMINAL FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MA40278M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013499021
NSN
5961-01-349-9021
MA40278M
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013499021
NSN
5961-01-349-9021
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MINIMUM AND 0.3 MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MICROWAVE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.026 INCHES MINIMUM AND 0.028 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 NOMINAL FORWARD VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
312A1717P1
TRANSISTOR
NSN, MFG P/N
5961013499473
NSN
5961-01-349-9473
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
TRANSISTOR
Related Searches:
312A1718
TRANSISTOR
NSN, MFG P/N
5961013499921
NSN
5961-01-349-9921
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 89954-312A1718 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
312A1718P1
TRANSISTOR
NSN, MFG P/N
5961013499921
NSN
5961-01-349-9921
MFG
WARD LEONARD ELECTRIC COMPANY INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 89954-312A1718 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
948E500 PIECE 252
TRANSISTOR
NSN, MFG P/N
5961013499921
NSN
5961-01-349-9921
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 89954-312A1718 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
MJ10025BI
TRANSISTOR
NSN, MFG P/N
5961013499921
NSN
5961-01-349-9921
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 10.00 AMPERES MAXIMUM BASE CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TEST DATA DOCUMENT: 89954-312A1718 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC
Related Searches:
61205-90065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013499922
NSN
5961-01-349-9922
61205-90065
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013499922
NSN
5961-01-349-9922
MFG
AAI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 0.15 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
OVERALL WIDTH: 1.800 INCHES MINIMUM AND 2.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BEAM LEAD SCHOTTKY DIODE FOR DETECTORS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
HSCH-5312
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013499922
NSN
5961-01-349-9922
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 0.15 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FUNCTION FOR WHICH DESIGNED: MICROWAVE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.400 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
OVERALL WIDTH: 1.800 INCHES MINIMUM AND 2.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: BEAM LEAD SCHOTTKY DIODE FOR DETECTORS; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.200 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
307A8978
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013500041
NSN
5961-01-350-0041
307A8978
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013500041
NSN
5961-01-350-0041
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM ITEM NAME: FLD RECTIFIER
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM ITEM TYPE NUMBER: 948E500 PIECE 19
MAJOR COMPONENTS: DIODE 6,TERMINAL BOARD 1
Related Searches:
307A8982P1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013500042
NSN
5961-01-350-0042
307A8982P1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013500042
NSN
5961-01-350-0042
MFG
GENERAL ELECTRIC CO GE DRIVE SYSTEMS GOVERNMENT BUSINESS OPN
Description
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM ITEM TYPE NUMBER: 948E500 PIECE 285
MAJOR COMPONENTS: THYRISTOR 3,PRINTED WIRING BOARD 1
Related Searches:
G339805-2
TRANSISTOR
NSN, MFG P/N
5961013501017
NSN
5961-01-350-1017
MFG
AUSTIN SEMICONDUCTOR INC DBA MICROSS COMPONENTS
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: MILSTAR
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
H46506
TRANSISTOR
NSN, MFG P/N
5961013501017
NSN
5961-01-350-1017
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: MILSTAR
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
NFP2056
TRANSISTOR
NSN, MFG P/N
5961013501017
NSN
5961-01-350-1017
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: MILSTAR
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
NHG339805-2
TRANSISTOR
NSN, MFG P/N
5961013501017
NSN
5961-01-350-1017
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: MILSTAR
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
SA2858
TRANSISTOR
NSN, MFG P/N
5961013501017
NSN
5961-01-350-1017
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: MILSTAR
CRITICALITY CODE JUSTIFICATION: FEAT
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPECIAL FEATURES: HARDNESS CRITICAL ITEM
Related Searches:
5840
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501018
NSN
5961-01-350-1018
MFG
VAISALA INC.
Description
DESIGN CONTROL REFERENCE: 5840
III END ITEM IDENTIFICATION: METEROLOGICAL
MANUFACTURERS CODE: 63653
THE MANUFACTURERS DATA:
Related Searches:
201909-27
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501019
NSN
5961-01-350-1019
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
III END ITEM IDENTIFICATION: MILSTAR
Related Searches:
61205-90070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501244
NSN
5961-01-350-1244
61205-90070
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501244
NSN
5961-01-350-1244
MFG
AAI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO GOLD PLATED ALUMINUM USING A SILVER FILLED CONDUCTIVE EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC_
Related Searches:
DP102147-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501244
NSN
5961-01-350-1244
DP102147-000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013501244
NSN
5961-01-350-1244
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.1 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: MOUNTING PAD
FUNCTION FOR WHICH DESIGNED: SWITCHING
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.005 INCHES MINIMUM AND 0.008 INCHES MAXIMUM
OVERALL LENGTH: 0.013 INCHES NOMINAL
OVERALL WIDTH: 0.013 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: THE DIODE SHALL BE CAPABLE OF FULFILLING ALL REQUIREMENTS WHEN ATTACHED TO GOLD PLATED ALUMINUM USING A SILVER FILLED CONDUCTIVE EPOXY; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 1 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC_
