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5961-01-394-0072
20 Products
048957-0001
TRANSISTOR
NSN, MFG P/N
5961013940072
NSN
5961-01-394-0072
MFG
THALES ATM INC.
Description
TRANSISTOR
Related Searches:
MZ0912B100Y
TRANSISTOR
NSN, MFG P/N
5961013940072
NSN
5961-01-394-0072
MFG
NORTH AMERICAN PHILIPS CORP PHILIPS COMPONENTS SEMICONDUCTOR DIV
Description
TRANSISTOR
Related Searches:
14039069-3
TRANSISTOR
NSN, MFG P/N
5961013940719
NSN
5961-01-394-0719
MFG
SAGEM TELECOMMUNICATIONS
Description
SPECIAL FEATURES: 29 AUG 2000; ITEM REVIEWED UNDER GIRDER PROJECT. NON-CONCUR TO CANCELATION REQUEST
Related Searches:
BSS64
TRANSISTOR
NSN, MFG P/N
5961013940719
NSN
5961-01-394-0719
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
SPECIAL FEATURES: 29 AUG 2000; ITEM REVIEWED UNDER GIRDER PROJECT. NON-CONCUR TO CANCELATION REQUEST
Related Searches:
2N2369A
TRANSISTOR
NSN, MFG P/N
5961013940845
NSN
5961-01-394-0845
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
UDZ5736
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013940914
NSN
5961-01-394-0914
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
872383-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013941711
NSN
5961-01-394-1711
872383-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013941711
NSN
5961-01-394-1711
MFG
VOLVO PENTA OF THE AMERICAS INC
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
DHA6522B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013942038
NSN
5961-01-394-2038
MFG
API ELECTRONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A3110506-002
TRANSISTOR
NSN, MFG P/N
5961013942115
NSN
5961-01-394-2115
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 80063
MFR SOURCE CONTROLLING REFERENCE: A3110506-002
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.705 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3110506 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 16.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
OM1825SC
TRANSISTOR
NSN, MFG P/N
5961013942115
NSN
5961-01-394-2115
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 13.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 80063
MFR SOURCE CONTROLLING REFERENCE: A3110506-002
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.520 INCHES NOMINAL
OVERALL LENGTH: 1.120 INCHES NOMINAL
OVERALL WIDTH: 0.705 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: CASE CONTAINS BERYLLIUM OXIDE. HANDLE AND DISPOSE IAW HAZMAT PROCEDURES
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3110506 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 16.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
1127320927
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013942138
NSN
5961-01-394-2138
1127320927
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013942138
NSN
5961-01-394-2138
MFG
BOSCH ROBERT CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DV1006
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013942139
NSN
5961-01-394-2139
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
SM-B-963771
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013942139
NSN
5961-01-394-2139
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
986-0020-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013942780
NSN
5961-01-394-2780
986-0020-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013942780
NSN
5961-01-394-2780
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
III END ITEM IDENTIFICATION: PACER DAWN
MATERIAL: PLASTIC ACRYLIC
MOUNTING FACILITY TYPE AND QUANTITY: 2 SLOT SINGLE MOUNTING FACILITY
MOUNTING SLOT LENGTH: 0.198 INCHES NOMINAL SINGLE MOUNTING FACILITY
MOUNTING SLOT WIDTH: 0.196 INCHES NOMINAL SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.942 INCHES NOMINAL
OVERALL WIDTH: 0.900 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
Related Searches:
1N4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013942873
NSN
5961-01-394-2873
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
282-105
TRANSISTOR
NSN, MFG P/N
5961013942944
NSN
5961-01-394-2944
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
III END ITEM IDENTIFICATION: DISPLAY UNIT,RADAR
Related Searches:
A3110507-005
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013943362
NSN
5961-01-394-3362
A3110507-005
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013943362
NSN
5961-01-394-3362
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110507 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 150.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110507-005
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.540 INCHES NOMINAL
OVERALL LENGTH: 1.200 INCHES MAXIMUM
OVERALL WIDTH: 0.810 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ELECTROSTATIC SENSITIVE. CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES.
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
A3110676-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943364
NSN
5961-01-394-3364
A3110676-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013943364
NSN
5961-01-394-3364
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 80063
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: A3110676-001
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3110676 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A3110819-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013943365
NSN
5961-01-394-3365
A3110819-001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013943365
NSN
5961-01-394-3365
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110819 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 5895-01-288-6340
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110819-001
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
Related Searches:
RA2952
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013943365
NSN
5961-01-394-3365
RA2952
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013943365
NSN
5961-01-394-3365
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 80063-A3110819 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 30.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 WORKING PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: 5895-01-288-6340
MANUFACTURERS CODE: 80063
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: A3110819-001
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
