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5961-01-305-8546
20 Products
1794276
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013058546
NSN
5961-01-305-8546
1794276
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013058546
NSN
5961-01-305-8546
MFG
RAYTHEON ANSCHUETZ GMBH
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
JAN1N943B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013055270
NSN
5961-01-305-5270
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL
Related Searches:
SM-A-702778
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013055270
NSN
5961-01-305-5270
SM-A-702778
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013055270
NSN
5961-01-305-5270
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL
Related Searches:
TG35C60
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013055271
NSN
5961-01-305-5271
TG35C60
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013055271
NSN
5961-01-305-5271
MFG
TENNEY ENGINEERING INC HQ
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS AND 300.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.197 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL REPETITIVE PEAK OFF-STATE VOLTAGE AND 3.0 MAXIMUM GATE TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
L6511039-003
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013056136
NSN
5961-01-305-6136
L6511039-003
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013056136
NSN
5961-01-305-6136
MFG
BOEING COMPANY THE DBA BOEING
Description
MATERIAL: METAL
OVERALL HEIGHT: 0.125 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
Related Searches:
850-40923-82
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013056827
NSN
5961-01-305-6827
850-40923-82
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013056827
NSN
5961-01-305-6827
MFG
MICROSEMI CORP-COLORADO
Description
DESIGN CONTROL REFERENCE: 850-40923-82
III END ITEM IDENTIFICATION: SEMICONDUCTORS DEVICES AND ASSOCIATED HARDWARE
MANUFACTURERS CODE: 59377
THE MANUFACTURERS DATA:
Related Searches:
1373-4664
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013056828
NSN
5961-01-305-6828
1373-4664
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013056828
NSN
5961-01-305-6828
MFG
ESAB GROUP INC THE DBA ESAB WELDING PRODUCTS
Description
III END ITEM IDENTIFICATION: 1905-01-154-1191,LANDING CRAFT,UTILITY,DESIGN 2000
Related Searches:
312A5059P1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013057288
NSN
5961-01-305-7288
312A5059P1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013057288
NSN
5961-01-305-7288
MFG
BAE SYSTEMS CONTROLS INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SEN-1057
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013057288
NSN
5961-01-305-7288
SEN-1057
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013057288
NSN
5961-01-305-7288
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 100.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.350 INCHES MAXIMUM
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
C5083410
TRANSISTOR
NSN, MFG P/N
5961013057477
NSN
5961-01-305-7477
MFG
US ARMY COMBAT SURVEILLANCE AND TARGET ACQUISITION LABORATORY
Description
TRANSISTOR
Related Searches:
B4042255-1
TRANSISTOR
NSN, MFG P/N
5961013057478
NSN
5961-01-305-7478
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
TRANSISTOR
Related Searches:
A3012708-2
TRANSISTOR
NSN, MFG P/N
5961013057479
NSN
5961-01-305-7479
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: N-CHANNEL MOSFET
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012708 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
V10422
TRANSISTOR
NSN, MFG P/N
5961013057479
NSN
5961-01-305-7479
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 400.00 MILLIAMPERES MAXIMUM GATE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: N-CHANNEL MOSFET
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3012708 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 15.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
B4042276-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013057480
NSN
5961-01-305-7480
B4042276-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013057480
NSN
5961-01-305-7480
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4PH183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013057480
NSN
5961-01-305-7480
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
UM9809
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013057480
NSN
5961-01-305-7480
MFG
MICRO USPD INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A3012730-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013057481
NSN
5961-01-305-7481
A3012730-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013057481
NSN
5961-01-305-7481
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BDX66C
TRANSISTOR
NSN, MFG P/N
5961013057664
NSN
5961-01-305-7664
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 1.0 NOMINAL STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
BDV65B
TRANSISTOR
NSN, MFG P/N
5961013057665
NSN
5961-01-305-7665
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 4.6 MILLIMETERS MAXIMUM
OVERALL LENGTH: 21.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.2 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 13.6 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 1.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
5043006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013058157
NSN
5961-01-305-8157
MFG
CREST ULTRASONICS CORP.
Description
DESIGN CONTROL REFERENCE: 5043006
MANUFACTURERS CODE: 22221
SPECIAL FEATURES: END ITEM APPLICATION 6530-01-255-0860; WASHER-STERILIZER,SURGICAL INSTRUMENT; 86131; P/N SC-11
THE MANUFACTURERS DATA:
