My Quote Request
No products added yet
5961-01-369-4341
20 Products
5HS612
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013694341
NSN
5961-01-369-4341
5HS612
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013694341
NSN
5961-01-369-4341
MFG
OSHKOSH CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
A531A239-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013691491
NSN
5961-01-369-1491
A531A239-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013691491
NSN
5961-01-369-1491
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
NHA531A239-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013691491
NSN
5961-01-369-1491
NHA531A239-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013691491
NSN
5961-01-369-1491
MFG
DLA LAND AND MARITIME
Description
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
WSM-MUX-610
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013691732
NSN
5961-01-369-1732
WSM-MUX-610
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013691732
NSN
5961-01-369-1732
MFG
WESTERN SPACE & MARINE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VA-75-0225-001
TRANSISTOR
NSN, MFG P/N
5961013691852
NSN
5961-01-369-1852
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -50.0 NOMINAL GATE TO SOURCE VOLTAGE
Related Searches:
A3034629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013692691
NSN
5961-01-369-2691
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
V20-4629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013692691
NSN
5961-01-369-2691
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
841269-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013692692
NSN
5961-01-369-2692
MFG
DRS SIGNAL SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
841320
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013692693
NSN
5961-01-369-2693
MFG
DRS SIGNAL SOLUTIONS INC.
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
TERMINAL TYPE AND QUANTITY: 2 RIBBON
Related Searches:
JANTXV1N945B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013692759
NSN
5961-01-369-2759
JANTXV1N945B-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013692759
NSN
5961-01-369-2759
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N945B-1
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: MIL-C-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: MIL-S-19500 SPECIFICATION
VOLTAGE RAT
Related Searches:
TL052ACP
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013693443
NSN
5961-01-369-3443
TL052ACP
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013693443
NSN
5961-01-369-3443
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM ITEM NAME: ENHANCED JFET PRECISION DUAL OPERATIONAL AMPLIFIER
SPECIAL FEATURES: PLASTIC; DIP,8 PINS; INPUT VOLTAGE PORM 15 V; MAXIMUM OFFSET VOLTAGE IS 800 MICRO-VOLTS; TEMP RANGE 0 TO 70 DEG. C
Related Searches:
MB7827
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013693695
NSN
5961-01-369-3695
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5335668
TRANSISTOR
NSN, MFG P/N
5961013694052
NSN
5961-01-369-4052
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL LENGTH: 0.055 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 24.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.3 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
QXTR-5919
TRANSISTOR
NSN, MFG P/N
5961013694052
NSN
5961-01-369-4052
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DOUBLE EMITTER
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES NOMINAL
OVERALL LENGTH: 0.055 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 75.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 24.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.3 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
FBL-00-216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694053
NSN
5961-01-369-4053
FBL-00-216
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694053
NSN
5961-01-369-4053
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
JAN1N6487
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694054
NSN
5961-01-369-4054
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6487
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
1N6170A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694055
NSN
5961-01-369-4055
MFG
JOINT ELECTRON DEVICE ENGINEERING COUNCIL
Description
INCLOSURE MATERIAL: GLASS
OVERALL LENGTH: 57.5 MILLIMETERS MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 NOMINAL BREAKDOWN VOLTAGE, DC AND 114.0 NOMINAL REVERSE VOLTAGE, PEAK
Related Searches:
151100G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694056
NSN
5961-01-369-4056
MFG
CUSTOM COMPONENTS INC
Description
CAPACITANCE RATING IN PICOFARADS: 8.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.080 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.08 NOMINAL PEAK-POINT VOLTAGE AND 0.5 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
2710033-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694056
NSN
5961-01-369-4056
2710033-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013694056
NSN
5961-01-369-4056
MFG
EIP MICROWAVE INC
Description
CAPACITANCE RATING IN PICOFARADS: 8.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.100 INCHES NOMINAL
OVERALL LENGTH: 0.080 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.08 NOMINAL PEAK-POINT VOLTAGE AND 0.5 NOMINAL FORWARD VOLTAGE, DC
Related Searches:
6-356-000692
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013694341
NSN
5961-01-369-4341
6-356-000692
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013694341
NSN
5961-01-369-4341
MFG
GROVE U.S. L.L.C
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
