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5961-01-463-2898
20 Products
1083H55PC289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632898
NSN
5961-01-463-2898
1083H55PC289
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632898
NSN
5961-01-463-2898
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4942
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT, MECHANICSBURG, ACTIVITY HX QUALITY CONTROL MANUFACTURING AND TESTING SPECIFICATIONS
Related Searches:
NE76184A
TRANSISTOR
NSN, MFG P/N
5961014630850
NSN
5961-01-463-0850
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.80 MILLIMETERS NOMINAL
OVERALL LENGTH: 9.78 MILLIMETERS NOMINAL
OVERALL WIDTH: 9.78 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -6.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
STF460
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631256
NSN
5961-01-463-1256
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 30.2 MILLIMETERS NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 30.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
7849873P001
TRANSISTOR
NSN, MFG P/N
5961014631310
NSN
5961-01-463-1310
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 0.795 INCHES MINIMUM AND 0.805 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
1S2836
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631463
NSN
5961-01-463-1463
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: CLIP
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 50.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
A1S2836
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631463
NSN
5961-01-463-1463
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
MOUNTING FACILITY QUANTITY: 3
MOUNTING METHOD: CLIP
OVERALL LENGTH: 2.900 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 50.0 MAXIMUM REVERSE VOLTAGE, DC AND 1.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
02838
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631572
NSN
5961-01-463-1572
MFG
VICOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 36.00 AMPERES NOMINAL REVERSE CURRENT, PEAK AND 500.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: SQQ-32(V03COE/IFSCM94404
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION AND -65.0 DEG CELSIUS JUNCTION
OVERALL LENGTH: 1.145 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.6 MAXIMUM ON-STATE VOLTAGE, INSTANTANEOUS AND 35.0 MAXIMUM BASE SUPPLY VOLTAGE
Related Searches:
12549005
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631738
NSN
5961-01-463-1738
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
III END ITEM IDENTIFICATION: 2350010871095E/IFSCM19200
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12549005
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
Related Searches:
JANTX2N682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631738
NSN
5961-01-463-1738
JANTX2N682
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014631738
NSN
5961-01-463-1738
MFG
POWEREX INC
Description
III END ITEM IDENTIFICATION: 2350010871095E/IFSCM19200
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12549005
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS
Related Searches:
RC-5111
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632044
NSN
5961-01-463-2044
MFG
GRIMES AEROSPACE COMPANY DBA HONEYWELL
Description
III END ITEM IDENTIFICATION: LOADBANKE/IFSCM1W025
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -65.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE
Related Searches:
83649-02
TRANSISTOR
NSN, MFG P/N
5961014632048
NSN
5961-01-463-2048
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
III END ITEM IDENTIFICATION: A/F-18-DCNE/IFSCM76301
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
Related Searches:
1SZ52
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632137
NSN
5961-01-463-2137
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.700 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.150 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
UPA2003C
TRANSISTOR
NSN, MFG P/N
5961014632160
NSN
5961-01-463-2160
MFG
NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS CASE AND -30.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 16
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 19.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 16 CONNECTOR, COAXIAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BASE SUPPLY VOLTAGE AND 60.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -0.5 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
UPA2003GR
TRANSISTOR
NSN, MFG P/N
5961014632160
NSN
5961-01-463-2160
MFG
ANRITSU COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: 6625014252551E/IFSCM33297
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS CASE AND -30.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 16
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 19.400 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 900.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS
SEMICONDUCTOR MATERIAL: SILICON ALLOY
TERMINAL TYPE AND QUANTITY: 16 CONNECTOR, COAXIAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BASE SUPPLY VOLTAGE AND 60.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE AND -0.5 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
C17-63
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014632508
NSN
5961-01-463-2508
MFG
UNEX CORPORATION DBA HYTORC DIVISION DIV UNEX CORP
Description
III END ITEM IDENTIFICATION: 5130013421949E/IFSCM88277
Related Searches:
03707800
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632511
NSN
5961-01-463-2511
MFG
D & D MACHINERY AND SALES INC.
Description
III END ITEM IDENTIFICATION: 4940013851794E/IFSCM88277
Related Searches:
356A1451P65
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632515
NSN
5961-01-463-2515
356A1451P65
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632515
NSN
5961-01-463-2515
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 88277
Related Searches:
MMBD14LT1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632515
NSN
5961-01-463-2515
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 88277
Related Searches:
MMBD914
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632515
NSN
5961-01-463-2515
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
III END ITEM IDENTIFICATION: C-17A ACFT E/I FSCM 88277
Related Searches:
95422
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014632876
NSN
5961-01-463-2876
MFG
GENERAC CORP
Description
III END ITEM IDENTIFICATION: ENGINE DRIVEN GENERATING SET, 5DE 4197976, GENERAC CORP
