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5961-01-587-5176
20 Products
SEN-5282
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015875176
NSN
5961-01-587-5176
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
END ITEM IDENTIFICATION: 9515-01-563-0360;KIT,ARMOR,MEDIUM CRAWLER TRACTOR
MOUNTING FACILITY QUANTITY: 4
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.790 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
OVERALL LENGTH: 2.229 INCHES MINIMUM AND 2.269 INCHES MAXIMUM
OVERALL WIDTH: 1.219 INCHES MINIMUM AND 1.259 INCHES MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH PULSE POWER TRANSZORB
SPECIAL FEATURES: HEIGHT OF POST: 0.200 INCH NOMINAL;CENTER LINE DISTANCE TO CENTER LINE DISTANCE OF POSTS: 0.584 INCH NOMINAL;MOUNTING HOLES DIAMETER: 0.120 INCH NOMINAL;PEAK PULSE POWER DISSIPATION AT 25 DEGREE C,1MS,MAXIMUM 60 KW,STEADY STATE POWER DISSIPATION AT 25
TERMINAL TYPE AND QUANTITY: 2 BINDING POST
~1: DEGREE C MAXIMUM 40 WATTS,T CLAMPING 0 VOLTS TO V(BR) MINUS 1X 10 -8 SECONDS;OPERATING AND STORAGE TEMP: MINUS 55,PLUS 150 DEGREE C;REVERSE STAND-OFF VOLTAGE VMW (VOLTS) 33;MAXIMUM REVERSE LEAKAGE AT VWM LD (UA) 25;MINIMUM BREAKDOWN VOLTAGE AT 10 MA
~2: V(BR)(VOLTS) 36.7;MAXIMIM CLAMP
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V24B24T200AN
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015875482
NSN
5961-01-587-5482
V24B24T200AN
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015875482
NSN
5961-01-587-5482
MFG
VICOR CORPORATION
Description
OPERATING TEMP RANGE: -55.0/+100.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.280 INCHES NOMINAL
OVERALL WIDTH: 2.200 INCHES NOMINAL
SPECIAL FEATURES: THE "A" SUFFIX HAS CHANGED TO "B"; SAME FORM, FIT, AND FUCTION
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JANTXV1N2991B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015875783
NSN
5961-01-587-5783
JANTXV1N2991B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015875783
NSN
5961-01-587-5783
MFG
AVNET INC. DBA ELECTRO AIR
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
END ITEM IDENTIFICATION: MISSILE, MINUTEMAN III, LGM-30
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.169 INCHES
OVERALL LENGTH: 1.022 INCHES MINIMUM AND 1.253 INCHES MAXIMUM
OVERALL WIDTH: 0.437 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 10
THREAD SERIES DESIGNATOR: UNF AND UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 NOMINAL REGULATOR VOLTAGE
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JANTX1N4346
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015876172
NSN
5961-01-587-6172
JANTX1N4346
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015876172
NSN
5961-01-587-6172
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
END ITEM IDENTIFICATION: SOUTH KOREAN ARMED FORCES
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
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JANTX1N3823
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015876176
NSN
5961-01-587-6176
JANTX1N3823
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015876176
NSN
5961-01-587-6176
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
END ITEM IDENTIFICATION: SOUTH KOREAN ARMED FORCES
PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE
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KLU327A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015876300
NSN
5961-01-587-6300
KLU327A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015876300
NSN
5961-01-587-6300
MFG
DRS POWER & CONTROL TECHNOLOGIES INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
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UF2006
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015877206
NSN
5961-01-587-7206
UF2006
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015877206
NSN
5961-01-587-7206
MFG
DIODES INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES REVERSE CURRENT, PEAK
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE AND 560.0 REPETITIVE PEAK REVERSE VOLTAGE
OPERATING TEMP RANGE: -65.0/+150.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST/SUPER-FAST, ULTRA-FAST RECOVERY RECTIFIERS
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
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RHRG75120
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015877233
NSN
5961-01-587-7233
RHRG75120
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015877233
NSN
5961-01-587-7233
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
PART NAME ASSIGNED BY CONTROLLING AGENCY: HIGH SPEED RECTIFIER
SPECIAL FEATURES: DIE TYPE 49042, PACKAGE TO-247
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RHRG30120
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015877244
NSN
5961-01-587-7244
RHRG30120
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015877244
NSN
5961-01-587-7244
MFG
FAIRCHILD SEMICONDUCTOR CORPORATION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: SILICON
OPERATING TEMP RANGE: -60.0/+175.0 DEG CELSIUS
SPECIAL FEATURES: 30A; HYPERFAST, WITH SOFT RECOVERY
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700AC SP
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5961015877555
NSN
5961-01-587-7555
MFG
INSTRUMENTS AND CONTROLS INC. DBA I.C.I.
Description
END ITEM IDENTIFICATION: CONSOLE BURNER MANAGEMENT SYSTEM
PART NAME ASSIGNED BY CONTROLLING AGENCY: IRIS FLAME SCANNER
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3841AS2020-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015878814
NSN
5961-01-587-8814
3841AS2020-01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961015878814
NSN
5961-01-587-8814
MFG
NAVAL AIR SYSTEMS COMMAND
Description
END ITEM IDENTIFICATION: 01-539-1799; TEST SET, ELECTRONIC SYSTEMS
PART NAME ASSIGNED BY CONTROLLING AGENCY: (DWG TITLE) AC POWER SUPPLY SENSE DIODE ASSEMBLY; (INAVY) DIODE ASSEMBLY
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SM15T33A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015879155
NSN
5961-01-587-9155
MFG
VISHAY INTERTECHNOLOGY INC.
Description
END ITEM IDENTIFICATION: HELICOPTER,APACHE
PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESSOR
SPECIAL FEATURES: TERMINALS: MATTE TIN PLATED LEADS,SOLDERABLE PER J-STD-002 AND JESD22-B102;STAND-OFF VOLTAGE,VRM (V): 28.2;LEAKAGE CURRENT(3) IRM AT VR: 1.0;BREAKDOWN VOLTAGE,VBR AT IT (2)(V): MIN: 31.4,MAX: 3.7;TEST CURRENT,IT (MA): 1.0;CLAMPING VOLTAGE,VC AT IPP (8/20
~1: U-S),(V): 59.0,(A): 169;A-T,MAX,10-4/DEGREE C: 9.8
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DSEI 12-12A
FAST RECOVERY EPITAXIAL DIODE
NSN, MFG P/N
5961015880314
NSN
5961-01-588-0314
DSEI 12-12A
FAST RECOVERY EPITAXIAL DIODE
NSN, MFG P/N
5961015880314
NSN
5961-01-588-0314
MFG
IXYS CORPORATION
Description
PART NAME ASSIGNED BY CONTROLLING AGENCY: FAST RECOVERY EPITAXIAL DIODE (FRED)
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NSS60601MZ4
TRANSISTOR
NSN, MFG P/N
5961015880318
NSN
5961-01-588-0318
MFG
ON SEMICONDUCTOR
Description
PART NAME ASSIGNED BY CONTROLLING AGENCY: NPN TRANSISTOR
SPECIAL FEATURES: 60 VOLTS, 6.0 AMPS, 2.0 WATTS; THESE DEVICES ARE PB-FREE, HALOGEN FREE/BFR FREE AND ARE ROHS COMPLIANT
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MUR4100EG
RECTIFIER,POWER
NSN, MFG P/N
5961015880325
NSN
5961-01-588-0325
MFG
ON SEMICONDUCTOR
Description
PART NAME ASSIGNED BY CONTROLLING AGENCY: SWITCHMODE POWER RECTIFIER
SPECIAL FEATURES: ULTRAFAST RECTIFIER; 4.0 AMP; 800-1000 VOLTS; 175 DEG C OP JUNCTION TEMP; CASE: EXPOSY, MOLDED; WEIGHT: 1.1 GR; PB-FREE DEVICE
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JANTX1N6117AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880376
NSN
5961-01-588-0376
JANTX1N6117AUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880376
NSN
5961-01-588-0376
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, DC
END ITEM IDENTIFICATION: 5999-01-529-7074: CCA, BIT, AIRCRAFT, MA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM PEAK TURN-ON POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UNLEADED OR SURFACE MOUNTED; SQUARE END-CAP DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 MINIMUM BREAKDOWN VOLTAGE, DC
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JANTX1N747AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880398
NSN
5961-01-588-0398
JANTX1N747AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880398
NSN
5961-01-588-0398
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
END ITEM IDENTIFICATION: 5999-01-529-7076; CCA, BIT, AIRCRAFT. MA
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: ITEM HAS METALLURGICAL BOND; UNLEADED OR SUFACE MOUNTED (ROUND END-CAP DIODE)
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.6 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANC
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JANTX1N4968US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880422
NSN
5961-01-588-0422
JANTX1N4968US
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880422
NSN
5961-01-588-0422
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 176.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
END ITEM IDENTIFICATION: 5999-01-529-7074; CCA, BIT, AIRCRAFT, MA
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UNLEADED OR SURFACE MOUNTED (SQUARE END-CAP DIODES)
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 27.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0/+5.0
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JANTX1N5811CBUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880433
NSN
5961-01-588-0433
JANTX1N5811CBUS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880433
NSN
5961-01-588-0433
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 125.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
END ITEM IDENTIFICATION: 5999-01-529-8935; RECTIFIER EMI FLTR
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: UNLEADED OR SURFACE MOUNTED
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX1N3329B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880476
NSN
5961-01-588-0476
JANTX1N3329B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015880476
NSN
5961-01-588-0476
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 930.00 MILLIAMPERES MAXIMUM REGULATOR CURRENT
END ITEM IDENTIFICATION: AIRCRAFT, AWACS E-3A
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.453 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/358 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.3 MAXIMUM BREAKDOWN VOLTAGE, DC
VOLTAGE TOLERANCE IN PERCENT: -5.0/+5.0
