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5961-01-496-8971
20 Products
CMPT2907A
TRANSISTOR
NSN, MFG P/N
5961014968971
NSN
5961-01-496-8971
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FUNCTION FOR WHICH DESIGNED: SWITCHING AND GENERAL PURPOSE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.005 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.035 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
1173A854-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014969540
NSN
5961-01-496-9540
1173A854-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014969540
NSN
5961-01-496-9540
MFG
PEERLESS INSTRUMENT CO. INC.
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 1173A854-1
MANUFACTURERS CODE: 95210
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
3166121
TRANSISTOR
NSN, MFG P/N
5961014969594
NSN
5961-01-496-9594
MFG
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM
Description
TRANSISTOR
Related Searches:
3166122
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014969595
NSN
5961-01-496-9595
MFG
JOINT ELECTRONICS TYPE DESIGNATION SYSTEM
Description
III END ITEM IDENTIFICATION: USED ON MODEL NUMBER AN/AQ13A
Related Searches:
2N3221
TRANSISTOR
NSN, MFG P/N
5961014969861
NSN
5961-01-496-9861
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
III END ITEM IDENTIFICATION: GYROSCOPE
SPECIAL FEATURES: NPN HIGH-POWER TRANSISTOR
Related Searches:
JAN2N6283
TRANSISTOR
NSN, MFG P/N
5961014970955
NSN
5961-01-497-0955
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N6283
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/504
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/504 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
797-0974-001
TRANSISTOR
NSN, MFG P/N
5961014972930
NSN
5961-01-497-2930
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
FK23121P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014974240
NSN
5961-01-497-4240
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL, VOLTAGE,
Related Searches:
JANTX1N6490US
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961014974281
NSN
5961-01-497-4281
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING: 49.000 MILLIAMPERES
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6490US
MANUFACTURERS CODE: 81349
MATERIAL: COPPER AND GLASS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406G
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 2.155 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 1.5 WATT GLASS ZENER DIODE HAS MICROMINIATURE PACKAGE; HIGH PERFORMANCE CHARACTERISTICS; STABLE OPERATION AT TEMPERATURES TO 200 DEGREES CELCIUS; VOIDLESS HERMETICALLY SEALED GLASS PACKAGE; TRIPLE LAYER PASSIVATION; VERY LOW THERMAL IMPEDANCE;
VOLTAGE IN VOLTS AND CURRENT TYPE: 5.1 DC
WATTAGE RATING: 1.500 WATTS
~1: METALLURGICALLY BONDED
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187 449
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014974730
NSN
5961-01-497-4730
187 449
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014974730
NSN
5961-01-497-4730
MFG
MILLER ELECTRIC MFG CO
Description
III END ITEM IDENTIFICATION: WELDING MACHINE
Related Searches:
797-1956-001
TRANSISTOR
NSN, MFG P/N
5961014974915
NSN
5961-01-497-4915
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
TRANSISTOR
Related Searches:
MBD1057-C18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014975031
NSN
5961-01-497-5031
MBD1057-C18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014975031
NSN
5961-01-497-5031
MFG
AEROFLEX / METELICS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MICROAMPERES MAXIMUM PEAK POINT CURRENT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.356 INCHES MINIMUM AND 0.406 INCHES MAXIMUM
OVERALL WIDTH: 0.356 INCHES MINIMUM AND 0.406 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 4 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 135.0 MAXIMUM FORWARD VOLTAGE, AVERAGE
Related Searches:
94-5958
TRANSISTOR
NSN, MFG P/N
5961014975662
NSN
5961-01-497-5662
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES MAXIMUM SOURCE CURRENT
III END ITEM IDENTIFICATION: 2350-01-455-3174
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.357 INCHES MINIMUM AND 0.363 INCHES MAXIMUM
OVERALL HEIGHT: 0.171 INCHES MINIMUM AND 0.179 INCHES MAXIMUM
OVERALL LENGTH: 0.322 INCHES MINIMUM AND 0.327 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE AND 4.0 MAXIMUM GATE TO SOURCE THRESHOLD VOLTAGE
Related Searches:
DLZ-12AH1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014975803
NSN
5961-01-497-5803
DLZ-12AH1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014975803
NSN
5961-01-497-5803
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 2.00 MICROAMPERES MAXIMUM DRAIN CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: 2350-01-455-3174
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: -55.0 DEG CELSIUS AMBIENT AIR AND 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.895 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
OVERALL WIDTH: 0.450 INCHES MINIMUM AND 0.480 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: THE H1 IN THE P/N REPRESENTS 100% JANTX LEVEL SCREENING
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE SUPRESSION VOLTAGE AND 13.3 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICON
Related Searches:
G706650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014976337
NSN
5961-01-497-6337
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: OE-562/USC-38(V) ANTENNA GROUP
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
SPECIAL FEATURES: USES (61873) STS (9MM MALE PIN CIRCULAR CONNECTOR)
Related Searches:
G706650-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014976337
NSN
5961-01-497-6337
MFG
RAYTHEON CO EQUIPMENT DIV HQ
Description
III END ITEM IDENTIFICATION: OE-562/USC-38(V) ANTENNA GROUP
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
SPECIAL FEATURES: USES (61873) STS (9MM MALE PIN CIRCULAR CONNECTOR)
Related Searches:
XL335SY22P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014976337
NSN
5961-01-497-6337
XL335SY22P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014976337
NSN
5961-01-497-6337
MFG
ADVANCED THERMAL PRODUCTS INC DBA A T P
Description
III END ITEM IDENTIFICATION: OE-562/USC-38(V) ANTENNA GROUP
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED STUD
SPECIAL FEATURES: USES (61873) STS (9MM MALE PIN CIRCULAR CONNECTOR)
Related Searches:
82-8110-80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014976402
NSN
5961-01-497-6402
82-8110-80
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014976402
NSN
5961-01-497-6402
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
III END ITEM IDENTIFICATION: 5895-01-461-9786
Related Searches:
515337-2
TRANSISTOR
NSN, MFG P/N
5961014977241
NSN
5961-01-497-7241
MFG
ITT CORPORATION DBA ITT COMMUNICATIONS SYSTEMS
Description
TRANSISTOR
Related Searches:
14-1055
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014978800
NSN
5961-01-497-8800
14-1055
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014978800
NSN
5961-01-497-8800
MFG
EUROATLAS GESELLSCHAFT FUER LEISTUNG SELEKTRONIK MBH
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: FRIGATE F124, MULTIFUNCTION RADAR APAR, THALES NEDERLAND
