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5961-01-576-8734
20 Products
99202923
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768734
NSN
5961-01-576-8734
MFG
THALES
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.7 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 NOMINAL BASE SUPPLY VOLTAGE
Related Searches:
SI3454DV
TRANSISTOR
NSN, MFG P/N
5961015765835
NSN
5961-01-576-5835
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: N-CHANNEL MOSFET
III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSISTOR
SPECIAL FEATURES: CONTINUOUS DRAIN CURRENT :4.2 A; DRAIN-SOURCE BREAKDOWN VOLTAGE: 30V; GATE-SOURCE BREAKDOWN VOLTAGE: 20 V
Related Searches:
C53490-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015765996
NSN
5961-01-576-5996
C53490-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015765996
NSN
5961-01-576-5996
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CA26225-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766009
NSN
5961-01-576-6009
CA26225-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766009
NSN
5961-01-576-6009
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C53907-054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766030
NSN
5961-01-576-6030
C53907-054
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766030
NSN
5961-01-576-6030
MFG
MOOG INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VJ647M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015766065
NSN
5961-01-576-6065
VJ647M
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961015766065
NSN
5961-01-576-6065
MFG
MICRO QUALITY SEMICONDUCTOR INC SUB OF MICROSEMI CORP
Description
III END ITEM IDENTIFICATION: AN/USQ-149(V)2, OBRP KIT.
MOUNTING METHOD: BASE
OVERALL WIDTH: 0.600 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
Related Searches:
91812409
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766117
NSN
5961-01-576-6117
MFG
THALES
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MINIPAK SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
SPECIAL FEATURES: FEATURES, SURFACE MOUNT MINIPAK PACKAGE, LOW HEIGHT, 0.7 MM MAX, SMALL FOOTPRINT, 1.75 MM2; BETTER THERMAL CONDUCTIVITY FOR HIGHER POWER DISSIPATION, SINGLE; SINGLE AND DUAL VERSIONS; MATCHED DIODES FOR CONSISTENT PERFORMANCE; LOW TURN-ON VOLTAGE (AS LOW
~1: AS 0.34 V AT MA); LOW FIT (FAILURE IN TIME) RATE; SIX-SIGMA QUALITY LEVEL
Related Searches:
HMPS-2820
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766117
NSN
5961-01-576-6117
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
III PART NAME ASSIGNED BY CONTROLLING AGENCY: MINIPAK SURFACE MOUNT RF SCHOTTKY BARRIER DIODES
SPECIAL FEATURES: FEATURES, SURFACE MOUNT MINIPAK PACKAGE, LOW HEIGHT, 0.7 MM MAX, SMALL FOOTPRINT, 1.75 MM2; BETTER THERMAL CONDUCTIVITY FOR HIGHER POWER DISSIPATION, SINGLE; SINGLE AND DUAL VERSIONS; MATCHED DIODES FOR CONSISTENT PERFORMANCE; LOW TURN-ON VOLTAGE (AS LOW
~1: AS 0.34 V AT MA); LOW FIT (FAILURE IN TIME) RATE; SIX-SIGMA QUALITY LEVEL
Related Searches:
110B271
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015766123
NSN
5961-01-576-6123
MFG
AVIONICS SPECIALTIES INC.
Description
III END ITEM IDENTIFICATION: KC-135 AIRCRAFT
SPECIAL FEATURES: NHA IS PITCH DEMODULATOR PRINTED WIRING ASSEMBLY
Related Searches:
BSR58
TRANSISTOR
NSN, MFG P/N
5961015766979
NSN
5961-01-576-6979
MFG
PHILIPS SEMICONDUCTORS INC
Description
OVERALL HEIGHT: 0.9 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 2.1 MILLIMETERS MINIMUM AND 2.5 MILLIMETERS MAXIMUM
SPECIAL FEATURES: MARKING CODE: M6P; DRAIN-SOURCE VOLTAGE: 40V; TOTAL POWER DISSIPATION: 250MW; DELAY TIME: 10 NS; RISE TIME: 10 NS; TURN OFF TIME: 100 NS
Related Searches:
CA35210-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015767501
NSN
5961-01-576-7501
CA35210-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015767501
NSN
5961-01-576-7501
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
III END ITEM IDENTIFICATION: CA21429-002 (19156) POWER SUPPLY AC/DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.094 INCHES NOMINAL
OVERALL LENGTH: 0.182 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
CA35210-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015767506
NSN
5961-01-576-7506
CA35210-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015767506
NSN
5961-01-576-7506
MFG
MOOG INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: GENERAL PURPOSE
III END ITEM IDENTIFICATION: CA21429-002 (19156) POWER SUPPLY AC/DC
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
91827966
TRANSISTOR
NSN, MFG P/N
5961015767866
NSN
5961-01-576-7866
MFG
THALES
Description
III END ITEM IDENTIFICATION: TRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: P-CHANNEL 60V (D-S) MOSFET
SPECIAL FEATURES: HALOGEN-FREE ACCORDING TO IEC 61249-2-21 DEFINITION; TRECNHFET POWER MOSFET; HIGH-SIDE SWITCHING; LOW THRESHOLD: -2V (TYPICALLY); FAST SWITCHING SPEED: 20 NS (TYP); LOW INPUT CAPACITANCE: 20PF (TYP)
Related Searches:
TP0610K
TRANSISTOR
NSN, MFG P/N
5961015767866
NSN
5961-01-576-7866
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
III END ITEM IDENTIFICATION: TRANSISTOR
III PART NAME ASSIGNED BY CONTROLLING AGENCY: P-CHANNEL 60V (D-S) MOSFET
SPECIAL FEATURES: HALOGEN-FREE ACCORDING TO IEC 61249-2-21 DEFINITION; TRECNHFET POWER MOSFET; HIGH-SIDE SWITCHING; LOW THRESHOLD: -2V (TYPICALLY); FAST SWITCHING SPEED: 20 NS (TYP); LOW INPUT CAPACITANCE: 20PF (TYP)
Related Searches:
SD200R16PC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768042
NSN
5961-01-576-8042
SD200R16PC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768042
NSN
5961-01-576-8042
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: SD200R16PC
MANUFACTURERS CODE: 17856
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
Related Searches:
OM13255SCX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768357
NSN
5961-01-576-8357
OM13255SCX
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768357
NSN
5961-01-576-8357
MFG
INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
607-3232-130F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768500
NSN
5961-01-576-8500
607-3232-130F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768500
NSN
5961-01-576-8500
MFG
MOUSER ELECTRONICS INC .
Description
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.925 INCHES NOMINAL
SPECIAL FEATURES: 12VDC; 15MA; 8MCD; GREEN; OP TEMP M25/P85 DEG C; BRASS/CH
TERMINAL LENGTH: 0.155 INCHES NOMINAL
Related Searches:
607-3232-120F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768515
NSN
5961-01-576-8515
607-3232-120F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768515
NSN
5961-01-576-8515
MFG
MOUSER ELECTRONICS INC .
Description
MOUNTING METHOD: PRESS FIT
OVERALL LENGTH: 0.925 INCHES NOMINAL
SPECIAL FEATURES: GREEN DIFFUSED LENS; 15MA; 45 MCD; BRASS/CHROM HOUSING; O
TERMINAL LENGTH: 0.155 INCHES NOMINAL
Related Searches:
MMSZ2V4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768722
NSN
5961-01-576-8722
MFG
ON SEMICONDUCTOR
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.7 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.4 NOMINAL BASE SUPPLY VOLTAGE
Related Searches:
MMSZ24
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015768729
NSN
5961-01-576-8729
MFG
ON SEMICONDUCTOR
Description
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS NOMINAL
OVERALL LENGTH: 3.7 MILLIMETERS MINIMUM AND 3.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.6 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
TERMINAL TYPE AND QUANTITY: 2 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 24.0 NOMINAL BASE SUPPLY VOLTAGE
