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5962-01-019-9957
20 Products
801549-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010199957
NSN
5962-01-019-9957
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.765 INCHES NOMINAL
BODY WIDTH: 0.235 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 801549-1
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: OPER POWER REQUIREMENTS 36.0VDC MAX,25 MADC MAX,SIMULTANEOUS OUTPUT OF SINE WAVE,TRIANGLE WAVE,AND SQUARE WAVE WITH FREQUENCY RANGE OF 0.001HZTO 1.0MHZ,BURN-IN REQUIRED
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:
Related Searches:
ICL8038BMJD/883
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010199957
NSN
5962-01-019-9957
MFG
ROCHESTER ELECTRONICS LLC
Description
BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.765 INCHES NOMINAL
BODY WIDTH: 0.235 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 801549-1
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: OPER POWER REQUIREMENTS 36.0VDC MAX,25 MADC MAX,SIMULTANEOUS OUTPUT OF SINE WAVE,TRIANGLE WAVE,AND SQUARE WAVE WITH FREQUENCY RANGE OF 0.001HZTO 1.0MHZ,BURN-IN REQUIRED
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:
Related Searches:
ITS6390-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010199957
NSN
5962-01-019-9957
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.765 INCHES NOMINAL
BODY WIDTH: 0.235 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 801549-1
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: OPER POWER REQUIREMENTS 36.0VDC MAX,25 MADC MAX,SIMULTANEOUS OUTPUT OF SINE WAVE,TRIANGLE WAVE,AND SQUARE WAVE WITH FREQUENCY RANGE OF 0.001HZTO 1.0MHZ,BURN-IN REQUIRED
TERMINAL SURFACE TREATMENT: TIN
THE MANUFACTURERS DATA:
Related Searches:
101357-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199958
NSN
5962-01-019-9958
MFG
PRINTRONIX INC.
Description
(NON-CORE DATA) BIT QUANTITY: 132
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 535.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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2522V
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199958
NSN
5962-01-019-9958
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 132
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 535.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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TMS3129NC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199958
NSN
5962-01-019-9958
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 132
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.375 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 535.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
594016-5
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199961
NSN
5962-01-019-9961
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, CARRY, LOOK AHEAD
FEATURES PROVIDED: CASCADABLE AND HIGH SPEED AND MONOLITHIC
III OVERALL HEIGHT: 0.325 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
SN74182N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199961
NSN
5962-01-019-9961
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, CARRY, LOOK AHEAD
FEATURES PROVIDED: CASCADABLE AND HIGH SPEED AND MONOLITHIC
III OVERALL HEIGHT: 0.325 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
SN74182NA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199961
NSN
5962-01-019-9961
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, CARRY, LOOK AHEAD
FEATURES PROVIDED: CASCADABLE AND HIGH SPEED AND MONOLITHIC
III OVERALL HEIGHT: 0.325 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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W74067-M3101-A410
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199961
NSN
5962-01-019-9961
W74067-M3101-A410
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010199961
NSN
5962-01-019-9961
MFG
SIEMENS AG AUTOMATISIERUNGSTECHNIK AUT A13
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, CARRY, LOOK AHEAD
FEATURES PROVIDED: CASCADABLE AND HIGH SPEED AND MONOLITHIC
III OVERALL HEIGHT: 0.325 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
37654912-288
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010199962
NSN
5962-01-019-9962
MFG
RAYTHEON CO
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND W/BUFFERED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR AND W/STORAGE AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654912 DRAWING
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATIO
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MM6300
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010199962
NSN
5962-01-019-9962
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND W/BUFFERED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR AND W/STORAGE AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654912 DRAWING
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATIO
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ROM/PROM FAMILY 021
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010199962
NSN
5962-01-019-9962
ROM/PROM FAMILY 021
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010199962
NSN
5962-01-019-9962
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND W/BUFFERED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR AND W/STORAGE AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 08783-37654912 DRAWING
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATIO
Related Searches:
1820-0590
MICROCIRCUIT
NSN, MFG P/N
5962010200086
NSN
5962-01-020-0086
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
MICROCIRCUIT
Related Searches:
14500003-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010200498
NSN
5962-01-020-0498
MFG
HONEYWELL INC COMMERCIAL DIV
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
440-002
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010200498
NSN
5962-01-020-0498
MFG
BNC CORP DBA BERKELEY NUCLEONICS
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
531759-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010200498
NSN
5962-01-020-0498
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
MC1812P
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010200498
NSN
5962-01-020-0498
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
SSS741J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010200500
NSN
5962-01-020-0500
MFG
ANALOG DEVICES INC. DIV SANTA CLARA SITE
Description
BODY LENGTH: 0.185 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.335 INCHES NOMINAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: CONTINUOUS SHORT CIRCUIT PROTECTION,SILICON-NITRIDE PASSIVATION,HIGH PERFORMANCE COMPENSATED AMPLIFIERS
Related Searches:
911269-20
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010200502
NSN
5962-01-020-0502
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 240.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 54.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 63.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
