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5980-00-476-8127
20 Products
2N2452
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004768127
NSN
5980-00-476-8127
MFG
HONEYWELL AEROSPATIALE INC
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
860001-103
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004768127
NSN
5980-00-476-8127
860001-103
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004768127
NSN
5980-00-476-8127
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,PHOTO
Related Searches:
142L1JS
LIGHT EMITTING DIODE
NSN, MFG P/N
5980004783030
NSN
5980-00-478-3030
MFG
EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC AND METAL
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.4 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
CM4-8015
LIGHT EMITTING DIODE
NSN, MFG P/N
5980004783030
NSN
5980-00-478-3030
MFG
CHICAGO MINIATURE LIGHTING LLC DBA CHICAGO MINIATURE OPTOELECTRON
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC AND METAL
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.4 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
LS-A12
LIGHT EMITTING DIODE
NSN, MFG P/N
5980004783030
NSN
5980-00-478-3030
MFG
EATON ELECTRICAL INC. DBA CUTTLER HMMER CMRCL CNTRLS DIV DIV VEHICLE CONTROLS BUSINESS UNIT
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC AND METAL
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.4 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
MF-190-R12H-CW
LIGHT EMITTING DIODE
NSN, MFG P/N
5980004783030
NSN
5980-00-478-3030
MFG
DISPLAY PRODUCTS INC. DBA DATA DISPLAY PRODUCTS
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC AND METAL
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.4 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
SM-B-752267
LIGHT EMITTING DIODE
NSN, MFG P/N
5980004783030
NSN
5980-00-478-3030
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
COLOR TONE PRODUCED PER SOURCE: CLEAR LENS
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FUNCTION FOR WHICH DESIGNED: VISIBLE LIGHT EMITTING
INCLOSURE MATERIAL: PLASTIC AND METAL
LENS TRANSPARENCY: TRANSPARENT
LUMINOUS INTENSITY: 0.4 MILLICANDELA MINIMUM AND 4.0 MILLICANDELA MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.285 INCHES NOMINAL
OVERALL LENGTH: 0.625 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 330.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM FORWARD VOLTAGE, DC
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BP2721405
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004872245
NSN
5980-00-487-2245
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
DESIGN CONTROL REFERENCE: FPA104
MANUFACTURERS CODE: 13715
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES NOMINAL
OVERALL WIDTH: 0.165 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
THE MANUFACTURERS DATA:
Related Searches:
FPA104
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004872245
NSN
5980-00-487-2245
MFG
FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
Description
DESIGN CONTROL REFERENCE: FPA104
MANUFACTURERS CODE: 13715
OVERALL HEIGHT: 0.165 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES NOMINAL
OVERALL WIDTH: 0.165 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 PIN
THE MANUFACTURERS DATA:
Related Searches:
352-0976-010
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004884832
NSN
5980-00-488-4832
352-0976-010
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004884832
NSN
5980-00-488-4832
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES NOMINAL DARK CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TAB SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.084 INCHES MINIMUM AND 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.102 INCHES MINIMUM AND 0.115 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC
Related Searches:
530767-1
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004884832
NSN
5980-00-488-4832
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES NOMINAL DARK CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TAB SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.084 INCHES MINIMUM AND 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.102 INCHES MINIMUM AND 0.115 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC
Related Searches:
LS600
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004884832
NSN
5980-00-488-4832
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES NOMINAL DARK CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND GOLD PLATED LEADS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: CASE AND TAB SURFACES GOLD
INCLOSURE MATERIAL: CERAMIC AND METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.084 INCHES MINIMUM AND 0.092 INCHES MAXIMUM
OVERALL LENGTH: 0.102 INCHES MINIMUM AND 0.115 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 7.0 MAXIMUM EMITTER TO COLLECTOR VOLTAGE, DC
Related Searches:
1990-0021
PHOTOELECTRIC CELL
NSN, MFG P/N
5980004887057
NSN
5980-00-488-7057
MFG
AGILENT TECHNOLOGIES INC. DIV AGILENT TECHNOLOGIES HEADQUARTERS
Description
END ITEM IDENTIFICATION: ELECTRICAL AND ELECTRONIC PROPERTIES MEASURING AND TESTING EQUIPMENT
Related Searches:
4403
PHOTOELECTRIC CELL
NSN, MFG P/N
5980004895047
NSN
5980-00-489-5047
MFG
INTERSIL CORPORATION
Description
INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 1.000 INCHES NOMINAL
Related Searches:
81-106
PHOTOELECTRIC CELL
NSN, MFG P/N
5980004895047
NSN
5980-00-489-5047
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 1.000 INCHES NOMINAL
Related Searches:
GIRDER 232055047
PHOTOELECTRIC CELL
NSN, MFG P/N
5980004895047
NSN
5980-00-489-5047
MFG
DLA LAND AND MARITIME
Description
INCLOSURE MATERIAL: METAL
OVERALL DIAMETER: 1.000 INCHES NOMINAL
Related Searches:
14259
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004896782
NSN
5980-00-489-6782
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
153-8001-001
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004896782
NSN
5980-00-489-6782
153-8001-001
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004896782
NSN
5980-00-489-6782
MFG
EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
1990-0085
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004896782
NSN
5980-00-489-6782
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
472-1151-001
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004896782
NSN
5980-00-489-6782
472-1151-001
SEMICONDUCTOR DEVICE,PHOTO
NSN, MFG P/N
5980004896782
NSN
5980-00-489-6782
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 30.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
