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5961-00-929-7780

20 Products

1901-0162

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009297780

NSN

5961-00-929-7780

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1901-0162

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009297780

NSN

5961-00-929-7780

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
III END ITEM IDENTIFICATION: DEFENSE SUPPORT PROGRAM

2503123-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297401

NSN

5961-00-929-7401

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2503123-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297401

NSN

5961-00-929-7401

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 07187-2503123-201 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.95 MAXIMUM REVERSE VOLTAGE, DC

SDR3-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297401

NSN

5961-00-929-7401

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SDR3-201

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297401

NSN

5961-00-929-7401

MFG

SOLID STATE DEVICES INC.

Description

CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 07187-2503123-201 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.95 MAXIMUM REVERSE VOLTAGE, DC

T1020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297401

NSN

5961-00-929-7401

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T1020

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297401

NSN

5961-00-929-7401

MFG

MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 3.50 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 07187-2503123-201 MANUFACTURERS SPECIFICATION CONTROL
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.95 MAXIMUM REVERSE VOLTAGE, DC

12-141-055-010

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009297576

NSN

5961-00-929-7576

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12-141-055-010

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009297576

NSN

5961-00-929-7576

MFG

ALLIS-CHALMERS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.625 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.443 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

C80AX85

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009297576

NSN

5961-00-929-7576

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C80AX85

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961009297576

NSN

5961-00-929-7576

MFG

GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM ON-STATE CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.625 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.443 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

1850-0153

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

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1850-0153

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, ORION P-3; DEFENSE SUPPORT PROGRAM, IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER

345-122-010

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

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345-122-010

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, ORION P-3; DEFENSE SUPPORT PROGRAM, IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER

SM1671

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

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SM1671

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, ORION P-3; DEFENSE SUPPORT PROGRAM, IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER

STG-1501

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

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STG-1501

TRANSISTOR

NSN, MFG P/N

5961009297777

NSN

5961-00-929-7777

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, ORION P-3; DEFENSE SUPPORT PROGRAM, IWO JIMA CLASS LPH
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.187 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 100.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND -20.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER

1901-0047

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

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1901-0047

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, B-52 AIRCRAFT; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); KIDD CLASS DDG; LOS ANGELES CLASS SSN (688); TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK

FD1205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

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FD1205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

MFG

FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, B-52 AIRCRAFT; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); KIDD CLASS DDG; LOS ANGELES CLASS SSN (688); TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK

FDH0835

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

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FDH0835

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, B-52 AIRCRAFT; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); KIDD CLASS DDG; LOS ANGELES CLASS SSN (688); TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK

S543

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

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S543

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297778

NSN

5961-00-929-7778

MFG

ITT SEMICONDUCTORS A DIVISION OF INTERNATIONAL TELEPHONE AND TELEGRAPH CORP

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: SUPPORT EQUIPMENT, B-52 AIRCRAFT; NIMITZ CLASS CVN; STURGEON CLASS SSN (637); VIRGINIA CLASS CGN (41); SPRUANCE CLASS DD (963); KIDD CLASS DDG; LOS ANGELES CLASS SSN (688); TICONDEROGA CLASS CG (47); FORRESTAL CLASS CV
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES NOMINAL
OVERALL LENGTH: 0.300 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM REVERSE VOLTAGE, PEAK

1901-0142

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

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1901-0142

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

343-211-041

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

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343-211-041

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

D1-1310

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

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D1-1310

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

MFG

DIODES INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

HF3504

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

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HF3504

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

MFG

GENERAL SEMICONDUCTOR INC

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

SS75

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

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SS75

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961009297779

NSN

5961-00-929-7779

MFG

SEMTECH CORPORATION

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.500 INCHES NOMINAL
OVERALL WIDTH: 1.125 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

343-211-040

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009297780

NSN

5961-00-929-7780

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343-211-040

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961009297780

NSN

5961-00-929-7780

MFG

INTERSTATE ELECTRONICS CORPORATION

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
III END ITEM IDENTIFICATION: DEFENSE SUPPORT PROGRAM