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5961-01-078-3609
20 Products
MPSA93
TRANSISTOR
NSN, MFG P/N
5961010783609
NSN
5961-01-078-3609
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 625.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECT
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209024121
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010783610
NSN
5961-01-078-3610
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
INCLOSURE MATERIAL: GLASS OR CERAMIC OR PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.0 MILLIMETERS NOMINAL
OVERALL LENGTH: 7.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 4.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 40.0 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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405688
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010783613
NSN
5961-01-078-3613
MFG
AMERICAN TELEPHONE AND TELEGRAPH CO
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
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JAN758A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010783613
NSN
5961-01-078-3613
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
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E4C3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010783614
NSN
5961-01-078-3614
MFG
POWER SUPPLIES INC
Description
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.125 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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M4G5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010783615
NSN
5961-01-078-3615
MFG
POWER SUPPLIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
DESIGN CONTROL REFERENCE: M4G5
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 34050
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.270 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
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07101GOD
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010783617
NSN
5961-01-078-3617
07101GOD
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961010783617
NSN
5961-01-078-3617
MFG
MICROSEMI CORP-COLORADO
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 0.916 INCHES MINIMUM AND 0.936 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.052 INCHES MINIMUM AND 1.058 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED
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JANTX1N4567
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010784686
NSN
5961-01-078-4686
JANTX1N4567
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010784686
NSN
5961-01-078-4686
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4567A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL DIAMETER: 0.078 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTE
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85895400-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010784866
NSN
5961-01-078-4866
85895400-01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010784866
NSN
5961-01-078-4866
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
SPECIAL FEATURES: ALUMINUM CASE;SINGLE PHASE;SILICON BRIDGE,RECTIFIER CIRCUITS;INPUT VOLTAGE 280 MAX;AVERAGE OUTPUT AMPS 14.5;1.125 IN. LG;1.125 IN. W;4 TERMINALS
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SCBA4F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010784866
NSN
5961-01-078-4866
SCBA4F
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010784866
NSN
5961-01-078-4866
MFG
SEMTECH CORPORATION
Description
SPECIAL FEATURES: ALUMINUM CASE;SINGLE PHASE;SILICON BRIDGE,RECTIFIER CIRCUITS;INPUT VOLTAGE 280 MAX;AVERAGE OUTPUT AMPS 14.5;1.125 IN. LG;1.125 IN. W;4 TERMINALS
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134615-0000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
134615-0000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
MFG
THALES ATM INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ALUMINUM CASE; 3 EYELET TERMINALS; TWO MOUNTING HOLES 0.169 DIA
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14290-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
14290-001
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ALUMINUM CASE; 3 EYELET TERMINALS; TWO MOUNTING HOLES 0.169 DIA
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160002-0000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
160002-0000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
MFG
BUTLER NATIONAL CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ALUMINUM CASE; 3 EYELET TERMINALS; TWO MOUNTING HOLES 0.169 DIA
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681-1P
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
681-1P
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961010784903
NSN
5961-01-078-4903
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES FORWARD CURRENT, AVERAGE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 WORKING PEAK REVERSE VOLTAGE
III END ITEM IDENTIFICATION: DISTANCE MEASURING EQUIPMENT (DME)
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.375 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES MAXIMUM
OVERALL WIDTH: 0.350 INCHES MAXIMUM
SPECIAL FEATURES: GROUNDED TERMINAL NOT INCLUDED; ALUMINUM CASE; 3 EYELET TERMINALS; TWO MOUNTING HOLES 0.169 DIA
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5082-9109
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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5961010785595
NSN
5961-01-078-5595
5082-9109
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 0.197 INCHES NOMINAL
OVERALL LENGTH: 0.310 INCHES NOMINAL
OVERALL WIDTH: 0.197 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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581R820H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
581R820H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 0.197 INCHES NOMINAL
OVERALL LENGTH: 0.310 INCHES NOMINAL
OVERALL WIDTH: 0.197 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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A2X1004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
A2X1004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
MFG
FEI MICROWAVE INC
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 0.197 INCHES NOMINAL
OVERALL LENGTH: 0.310 INCHES NOMINAL
OVERALL WIDTH: 0.197 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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SEN-3250-H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
SEN-3250-H01
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010785595
NSN
5961-01-078-5595
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OVERALL HEIGHT: 0.197 INCHES NOMINAL
OVERALL LENGTH: 0.310 INCHES NOMINAL
OVERALL WIDTH: 0.197 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE LEAD
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25-140569-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010785894
NSN
5961-01-078-5894
25-140569-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010785894
NSN
5961-01-078-5894
MFG
NORTHROP GRUMMAN SPACE & MISSION SYSTEMS CORP. DIV INTELLIGENCE SYSTEMS DIVISION/ESL
Description
SEMICONDUCTOR DEVICE,DIODE
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16783589-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010786106
NSN
5961-01-078-6106
16783589-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010786106
NSN
5961-01-078-6106
MFG
SYPRIS ELECTRONICS LLC
Description
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 16783589-001
MANUFACTURERS CODE: 28009
OVERALL DIAMETER: 0.093 INCHES NOMINAL
OVERALL LENGTH: 0.700 INCHES NOMINAL
SPECIAL FEATURES: ENCAPSULATED IN HEAT SHRINK YELLOW SLEEVING
THE MANUFACTURERS DATA:
