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5961-01-167-8529
20 Products
357863
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961011678529
NSN
5961-01-167-8529
MFG
FLUKE CORPORATION
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
113194
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
113194
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MISSILES AND FIRE CONTROL - ARCHBALD
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 113194
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94271
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 9.670 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.00 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO3322
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
78-5444
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
78-5444
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 113194
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94271
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 9.670 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.00 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO3322
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
LO3322
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
LO3322
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 113194
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94271
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 9.670 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.00 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO3322
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
T6K7101544BT00AS14
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
T6K7101544BT00AS14
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011678566
NSN
5961-01-167-8566
MFG
POWEREX INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 235.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: 113194
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94271
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 9.670 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 1.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 16.00 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO3322
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAG
Related Searches:
1S070
TRANSISTOR
NSN, MFG P/N
5961011678940
NSN
5961-01-167-8940
MFG
TOPAZ SEMICONDUCTOR INC SUB OF HYTEK MICROSYSTEMS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
6010152-002
TRANSISTOR
NSN, MFG P/N
5961011678940
NSN
5961-01-167-8940
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
C4415
TRANSISTOR
NSN, MFG P/N
5961011678940
NSN
5961-01-167-8940
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
CC4415
TRANSISTOR
NSN, MFG P/N
5961011678940
NSN
5961-01-167-8940
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
SD215DE-2
TRANSISTOR
NSN, MFG P/N
5961011678940
NSN
5961-01-167-8940
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 22.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
12616431
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011679130
NSN
5961-01-167-9130
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 800.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 2350-01-089-1261
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.380 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.755 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 35.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
SD51JT
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011679130
NSN
5961-01-167-9130
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 120.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 800.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 2350-01-089-1261
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.380 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.755 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 35.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
48-01-040
TRANSISTOR
NSN, MFG P/N
5961011679715
NSN
5961-01-167-9715
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 0.651 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
Related Searches:
JANTX1N981B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011679727
NSN
5961-01-167-9727
JANTX1N981B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011679727
NSN
5961-01-167-9727
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N981B
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOL
Related Searches:
HV10
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961011680154
NSN
5961-01-168-0154
MFG
H V COMPONENT ASSOCIATES INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
1-5KE33C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680238
NSN
5961-01-168-0238
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 31.50 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 26.8 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
1.5KE33C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680238
NSN
5961-01-168-0238
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 31.50 AMPERES MAXIMUM PEAK PULSE CURRENT
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.200 INCHES NOMINAL
OVERALL LENGTH: 0.370 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.040 INCHES NOMINAL
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 26.8 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
0126060-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680239
NSN
5961-01-168-0239
MFG
NAVAL ELECTRONIC SYSTEMS SECURITY ENGINEERING CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL HEIGHT: 0.470 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.210 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.350 INCHES MINIMUM AND 1.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
353-9043-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680239
NSN
5961-01-168-0239
353-9043-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680239
NSN
5961-01-168-0239
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL HEIGHT: 0.470 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.210 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.350 INCHES MINIMUM AND 1.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
60KS200C-XS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680239
NSN
5961-01-168-0239
60KS200C-XS
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011680239
NSN
5961-01-168-0239
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES SILVER
INCLOSURE MATERIAL: PLASTIC
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: THREADED HOLE
NOMINAL THREAD SIZE: 0.112 INCHES
OVERALL HEIGHT: 0.470 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
OVERALL LENGTH: 2.210 INCHES MINIMUM AND 2.270 INCHES MAXIMUM
OVERALL WIDTH: 1.350 INCHES MINIMUM AND 1.410 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 180.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
