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5961-01-414-2352
20 Products
4222012-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014142352
NSN
5961-01-414-2352
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
SEMICONDUCTOR DEVICE,DIODE
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MG1522
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014142352
NSN
5961-01-414-2352
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8210-1352-00
TRANSISTOR
NSN, MFG P/N
5961014142454
NSN
5961-01-414-2454
MFG
QUADTECH INC
Description
TRANSISTOR
Related Searches:
8210-1260
TRANSISTOR
NSN, MFG P/N
5961014142456
NSN
5961-01-414-2456
MFG
QUADTECH INC
Description
TRANSISTOR
Related Searches:
8215-0103
TRANSISTOR
NSN, MFG P/N
5961014142457
NSN
5961-01-414-2457
MFG
QUADTECH INC
Description
TRANSISTOR
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L702B
TRANSISTOR
NSN, MFG P/N
5961014143881
NSN
5961-01-414-3881
MFG
STMICROELECTRONICS INC
Description
TRANSISTOR
Related Searches:
171280-06
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014144330
NSN
5961-01-414-4330
171280-06
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014144330
NSN
5961-01-414-4330
MFG
GE AVIATION SYSTEMS LLC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL LIGHT EMITTING DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS GOLD
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 0.890 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL LIGHT EMITTING DIODE
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 35351-171280 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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1N6659LTXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014144330
NSN
5961-01-414-4330
1N6659LTXV
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014144330
NSN
5961-01-414-4330
MFG
SOLID STATE DEVICES INC.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL LIGHT EMITTING DIODE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: PLATED LEADS GOLD
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MAXIMUM
OVERALL LENGTH: 0.890 INCHES MAXIMUM
OVERALL WIDTH: 0.545 INCHES MAXIMUM
RESPONSE TIME: 35.0 NANOSECONDS MAXIMUM ALL LIGHT EMITTING DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL LIGHT EMITTING DIODE
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 35351-171280 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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5130A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145140
NSN
5961-01-414-5140
MFG
NTE ELECTRONICS INC SUB OF SOLID STATE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
62259-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145140
NSN
5961-01-414-5140
MFG
ENGINEERED AIR SYSTEMS INC. DBA DRS SUSTAINMENT SYSTEMS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
4222012-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145143
NSN
5961-01-414-5143
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
SEMICONDUCTOR DEVICE,DIODE
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MG1521
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145143
NSN
5961-01-414-5143
MFG
MICROSEMI CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
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550-3502-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145186
NSN
5961-01-414-5186
550-3502-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145186
NSN
5961-01-414-5186
MFG
ROI DEVELOPMENT CORP DBA NEWMAR
Description
SEMICONDUCTOR DEVICE,DIODE
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LM336BM-2.5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145829
NSN
5961-01-414-5829
LM336BM-2.5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145829
NSN
5961-01-414-5829
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.540 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
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MMBV109L
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014145832
NSN
5961-01-414-5832
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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MMBF4416L
TRANSISTOR
NSN, MFG P/N
5961014145833
NSN
5961-01-414-5833
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-236AB
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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VN0605T
TRANSISTOR
NSN, MFG P/N
5961014148629
NSN
5961-01-414-8629
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.18 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.043 INCHES MAXIMUM
OVERALL LENGTH: 0.111 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
OVERALL WIDTH: 0.048 INCHES MINIMUM AND 0.066 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.36 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
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91680811
TRANSISTOR
NSN, MFG P/N
5961014148640
NSN
5961-01-414-8640
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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SST215
TRANSISTOR
NSN, MFG P/N
5961014148640
NSN
5961-01-414-8640
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-143
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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4915-0500-200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014148641
NSN
5961-01-414-8641
4915-0500-200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014148641
NSN
5961-01-414-8641
MFG
AEROFLEX WICHITA INC.
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
