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5961-01-421-0657
20 Products
00.4.116.0125
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014210657
NSN
5961-01-421-0657
00.4.116.0125
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014210657
NSN
5961-01-421-0657
MFG
PILLER GERMANY GMBH & CO. KG
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 600.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.8 FORWARD VOLTAGE, AVERAGE AND 600.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
OPERATING TEMP RANGE: -40.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 20.7 MILLIMETERS MAXIMUM
OVERALL LENGTH: 38.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.4 MILLIMETERS MAXIMUM
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U1897-18
TRANSISTOR
NSN, MFG P/N
5961014204473
NSN
5961-01-420-4473
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
TRANSISTOR
Related Searches:
1682-077
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014204685
NSN
5961-01-420-4685
MFG
WOODWARD GOVERNOR COMPANY DBA INDUSTRIAL PRODUCTS GROUP DIV INDUSTRIAL PRODUCTS GROUP
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4575A-1
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
JANTX1N4575A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014204685
NSN
5961-01-420-4685
JANTX1N4575A-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014204685
NSN
5961-01-420-4685
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4575A-1
INCLOSURE MATERIAL: CERAMIC OR GLASS OR PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/452
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/452 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM NOMINAL REGULATOR VOLTAGE AND 6.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
11200010-1
TRANSISTOR
NSN, MFG P/N
5961014205158
NSN
5961-01-420-5158
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DIV LASER SYSTEMS
Description
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
SFT5015TX
TRANSISTOR
NSN, MFG P/N
5961014205158
NSN
5961-01-420-5158
MFG
SOLID STATE DEVICES INC.
Description
III END ITEM IDENTIFICATION: A/F-18-DCN
INCLOSURE MATERIAL: CERAMIC OR METAL OR GLASS
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC
Related Searches:
2693140-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014207747
NSN
5961-01-420-7747
2693140-1
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014207747
NSN
5961-01-420-7747
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 120.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.01 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-2693140 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 6.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
SFX260
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014207747
NSN
5961-01-420-7747
SFX260
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014207747
NSN
5961-01-420-7747
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.60 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 1.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 120.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.1 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 0.01 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-2693140 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE AND 600.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 6.0 MAXIMUM PEAK GATE VOLTAGE
Related Searches:
5322-130-33662
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014207777
NSN
5961-01-420-7777
5322-130-33662
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014207777
NSN
5961-01-420-7777
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
882902
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014207777
NSN
5961-01-420-7777
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84-C15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014207777
NSN
5961-01-420-7777
MFG
PHILIPS COMPONENTS
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
BZX84C15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014207777
NSN
5961-01-420-7777
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SS-33600
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014207777
NSN
5961-01-420-7777
MFG
THALES SOLUTIONS AUSTRALIA PTY LTD
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 3.0 MILLIMETERS NOMINAL
OVERALL WIDTH: 2.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 14.7 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
APT40M75JN
TRANSISTOR
NSN, MFG P/N
5961014208472
NSN
5961-01-420-8472
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 56.00 AMPERES MAXIMUM DARK CURRENT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: SLOT AND UNTHREADED HOLE
OVERALL HEIGHT: 11.8 MILLIMETERS MINIMUM AND 12.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 38.0 MILLIMETERS MINIMUM AND 38.2 MILLIMETERS MAXIMUM
OVERALL WIDTH: 25.2 MILLIMETERS MINIMUM AND 25.4 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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3164830-1
TRANSISTOR
NSN, MFG P/N
5961014208905
NSN
5961-01-420-8905
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES NOMINAL
OVERALL WIDTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTD TO MOUNTING PAD
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-804238 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
NPF406
TRANSISTOR
NSN, MFG P/N
5961014208905
NSN
5961-01-420-8905
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.270 INCHES NOMINAL
OVERALL WIDTH: 0.270 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MTD TO MOUNTING PAD
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 96214-804238 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
8879000108-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210394
NSN
5961-01-421-0394
8879000108-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210394
NSN
5961-01-421-0394
MFG
NAVCOM DEFENSE ELECTRONICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
DMF5079-90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210394
NSN
5961-01-421-0394
DMF5079-90
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210394
NSN
5961-01-421-0394
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTXV1N5531C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210552
NSN
5961-01-421-0552
JANTXV1N5531C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210552
NSN
5961-01-421-0552
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5531C
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: C-17A ACFT 88277
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL LENGTH: 1.800 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/437 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 11.0 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
JANTX1N4127-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210554
NSN
5961-01-421-0554
JANTX1N4127-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014210554
NSN
5961-01-421-0554
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4127-1
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
III END ITEM IDENTIFICATION: C-17A ACFT 88277
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/435
OVERALL LENGTH: 1.800 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500/435 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 56.0 NOMINAL REGULATOR VOLTAGE, DC
