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5961-01-514-2575
20 Products
APT30D40B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015142575
NSN
5961-01-514-2575
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 52.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 70.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 320.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
III PART NAME ASSIGNED BY CONTROLLING AGENCY: ULTRAFAST, SOFT RECOVERY, RECTIFIER DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-247
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 4.69 MILLIMETERS MINIMUM AND 5.31 MILLIMETERS MAXIMUM
OVERALL LENGTH: 40.61 MILLIMETERS MINIMUM AND 41.78 MILLIMETERS MAXIMUM
OVERALL WIDTH: 15.49 MILLIMETERS MINIMUM AND 16.26 MILLIMETERS MAXIMUM
SPECIAL FEATURES: MAXIMUM FORWARD VOLTAGE AT 30.0 AMPS, 25.0 DEGREES C. IS 1.5 VOLTS - AT30.0 AMPS, 150.0 DEGREES C. IS 1.3 VOLTS - AT 60.0 AMPS 25.0 DEGREES C. IS 1.5 VOLTS TYPICAL; MAXIMUM REVERSE LEAKAGE CURRENT - DIRECT REVERSE VOLTAGE RATED IS 250.0 MICROAMPS AT 25.0_!!
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BB147
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015144879
NSN
5961-01-514-4879
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.0 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.6 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.1 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.1 MILLIMETERS MINIMUM AND 0.2 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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91770719
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015144880
NSN
5961-01-514-4880
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.6 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.1 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.1 MILLIMETERS MINIMUM AND 0.2 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.1 MILLIMETERS MINIMUM AND 0.4 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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BB148
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015144880
NSN
5961-01-514-4880
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.8 MILLIMETERS MINIMUM AND 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 1.6 MILLIMETERS MINIMUM AND 1.8 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.1 MILLIMETERS MINIMUM AND 1.3 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.1 MILLIMETERS MINIMUM AND 0.2 MILLIMETERS MAXIMUM
TERMINAL LENGTH: 0.1 MILLIMETERS MINIMUM AND 0.4 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
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91787084
TRANSISTOR
NSN, MFG P/N
5961015144881
NSN
5961-01-514-4881
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.081 INCHES MINIMUM AND 0.093 INCHES MAXIMUM
OVERALL LENGTH: 0.198 INCHES MINIMUM AND 0.234 INCHES MAXIMUM
OVERALL WIDTH: 0.158 INCHES MINIMUM AND 0.194 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.050 INCHES MINIMUM AND 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961015144881
NSN
5961-01-514-4881
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.081 INCHES MINIMUM AND 0.093 INCHES MAXIMUM
OVERALL LENGTH: 0.198 INCHES MINIMUM AND 0.234 INCHES MAXIMUM
OVERALL WIDTH: 0.158 INCHES MINIMUM AND 0.194 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.7 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.050 INCHES MINIMUM AND 0.064 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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BDW42
TRANSISTOR
NSN, MFG P/N
5961015144882
NSN
5961-01-514-4882
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.070 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 85.0 WATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM COLLECTOR TO BASE VOLTAGE, DC
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BSR20A
TRANSISTOR
NSN, MFG P/N
5961015144883
NSN
5961-01-514-4883
MFG
PHILIPS COMPONENTS
Description
CURRENT RATING PER CHARACTERISTIC: -300.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -160.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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MUR 120
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145443
NSN
5961-01-514-5443
MUR 120
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145443
NSN
5961-01-514-5443
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, AVERAGE AND 35.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL DIAMETER: 0.079 INCHES MINIMUM AND 0.106 INCHES MAXIMUM
OVERALL LENGTH: 2.161 INCHES MINIMUM AND 2.205 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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MUR120
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145443
NSN
5961-01-514-5443
MUR120
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145443
NSN
5961-01-514-5443
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES FORWARD CURRENT, AVERAGE AND 35.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL DIAMETER: 0.079 INCHES MINIMUM AND 0.106 INCHES MAXIMUM
OVERALL LENGTH: 2.161 INCHES MINIMUM AND 2.205 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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MBRD 650CT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145444
NSN
5961-01-514-5444
MBRD 650CT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145444
NSN
5961-01-514-5444
MFG
FREESCALE SEMICONDUCTOR INC.
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.086 INCHES MINIMUM AND 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.367 INCHES MINIMUM AND 0.414 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: BARRIER PLATINUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
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MBRD650CT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145444
NSN
5961-01-514-5444
MBRD650CT
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961015145444
NSN
5961-01-514-5444
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 1 HALF-WAVE 1 PHASE
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.086 INCHES MINIMUM AND 0.094 INCHES MAXIMUM
OVERALL LENGTH: 0.367 INCHES MINIMUM AND 0.414 INCHES MAXIMUM
OVERALL WIDTH: 0.250 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: BARRIER PLATINUM
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
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BZX84-B30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015145445
NSN
5961-01-514-5445
MFG
PHILIPS COMPONENTS
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
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BLF242
TRANSISTOR
NSN, MFG P/N
5961015145446
NSN
5961-01-514-5446
MFG
PHILIPS COMPONENTS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.370 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
OVERALL HEIGHT: 0.251 INCHES MINIMUM AND 0.294 INCHES MAXIMUM
OVERALL LENGTH: 0.785 INCHES MINIMUM AND 0.815 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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JPAD5
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015145448
NSN
5961-01-514-5448
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.190 INCHES NOMINAL
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS NOMINAL TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -55.0 NOMINAL REVERSE BREAKDOWN VOLTAGE, DC
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BB640
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961015145739
NSN
5961-01-514-5739
MFG
SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015147206
NSN
5961-01-514-7206
74AC11000D
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015147206
NSN
5961-01-514-7206
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SPECIAL FEATURES: QUADRUPLE 2-INPUT POSITIVE-NAND GATES SEMICONDUCTORS
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015147207
NSN
5961-01-514-7207
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NSN, MFG P/N
5961015147207
NSN
5961-01-514-7207
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SPECIAL FEATURES: DUAL POSITIVE-EDGE-TRIGGERED D-TYPE FLIP-FLOPS WITH CLEAR AND PRESET SEMICONDUCTORS
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015147208
NSN
5961-01-514-7208
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015147208
NSN
5961-01-514-7208
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SPECIAL FEATURES: QUAD ENHANCED JFET LOW-POWER PRECISION OPERATIONAL AMPLIFIER SEMICONDUCTORS ANALOG AND MIXED
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TL032ID
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961015147209
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NSN, MFG P/N
5961015147209
NSN
5961-01-514-7209
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
SPECIAL FEATURES: QUAD ENHANCED JFET LOW-POWER PRECISION OPERATIONAL AMPLIFIER SEMICONDUCTORS ANALOG AND MIXED
