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5961-01-422-7088

20 Products

342A9600P2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227088

NSN

5961-01-422-7088

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342A9600P2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227088

NSN

5961-01-422-7088

MFG

BAE SYSTEMS CONTROLS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.022 INCHES MINIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

95-5162

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227088

NSN

5961-01-422-7088

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95-5162

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227088

NSN

5961-01-422-7088

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.022 INCHES MINIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JANTX1N6391

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227088

NSN

5961-01-422-7088

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JANTX1N6391

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227088

NSN

5961-01-422-7088

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE AND 600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.022 INCHES MINIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE AND 45.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

171285-06

TRANSISTOR

NSN, MFG P/N

5961014227366

NSN

5961-01-422-7366

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171285-06

TRANSISTOR

NSN, MFG P/N

5961014227366

NSN

5961-01-422-7366

MFG

GE AVIATION SYSTEMS LLC

JANTXV2N7227

TRANSISTOR

NSN, MFG P/N

5961014227366

NSN

5961-01-422-7366

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JANTXV2N7227

TRANSISTOR

NSN, MFG P/N

5961014227366

NSN

5961-01-422-7366

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

LS3360-HL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227374

NSN

5961-01-422-7374

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LS3360-HL

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227374

NSN

5961-01-422-7374

MFG

SIEMENS MICROELECTRONICS INC OPTOELECTRONICS DIV

900979-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227376

NSN

5961-01-422-7376

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900979-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227376

NSN

5961-01-422-7376

MFG

L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATIONS DISPLAY SYSTEMS DIV DISPLAY SYSTEMS

H35-9001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227376

NSN

5961-01-422-7376

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H35-9001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227376

NSN

5961-01-422-7376

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

SDX5046-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

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SDX5046-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

MFG

SOLID STATE DEVICES INC.

SEN-1952

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

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SEN-1952

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

SMC51185

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

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SMC51185

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

VE479-5046-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

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VE479-5046-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227377

NSN

5961-01-422-7377

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY

OM3633ST

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

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OM3633ST

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

MFG

INTERNATIONAL RECTIFIER CORPORATION DIV HI-REL

SEN-1951

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

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SEN-1951

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

MFG

RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR

SMC51177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

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SMC51177

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

VE479-4045-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

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VE479-4045-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

MFG

MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION

VE479-5045-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

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VE479-5045-0002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227378

NSN

5961-01-422-7378

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY

152-5063-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227380

NSN

5961-01-422-7380

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152-5063-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227380

NSN

5961-01-422-7380

MFG

TEKTRONIX INC. DBA TEKTRONIX

130836

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227383

NSN

5961-01-422-7383

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130836

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227383

NSN

5961-01-422-7383

MFG

FLUKE CORPORATION

BAT17

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227383

NSN

5961-01-422-7383

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BAT17

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014227383

NSN

5961-01-422-7383

MFG

BRITISH SAROZAL LTD