My Quote Request
No products added yet
5961-01-380-7536
20 Products
1N5709B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013807536
NSN
5961-01-380-7536
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 78.0 MINIMUM AND 86.0 MAXIMUM
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.120 INCHES MINIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3132211 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
676-4913-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013806011
NSN
5961-01-380-6011
676-4913-001
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013806011
NSN
5961-01-380-6011
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
DISTANCE BETWEEN MOUNTING FACILITY CENTERS: 1.245 INCHES MINIMUM AND 1.255 INCHES MAXIMUM ALL MOUNTING FACILITIES SINGLE CENTER GROUP
MATERIAL: ALUMINUM ALLOY 2024
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-A-225/6 ASSN STD ALL MATERIAL RESPONSES
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE ALL MOUNTING FACILITIES
OVERALL HEIGHT: 0.835 INCHES NOMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
OVERALL WIDTH: 0.293 INCHES NOMINAL
SPECIAL FEATURES: CHEMICAL FILM CLASS 3 PER MIL-C-5541 TO SURFACE INDICATED IN CONTROLLING DRAWING
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
SURFACE TREATMENT: COPPER AND TIN
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-T-10727 MIL STD ALL TREATMENT RESPONSES
UNTHREADED MOUNTING HOLE DIAMETER: 0.150 INCHES NOMINAL ALL MOUNTING FACILITIES
Related Searches:
DLZ-8C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013806091
NSN
5961-01-380-6091
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 8.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
44A350028P11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013806378
NSN
5961-01-380-6378
44A350028P11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013806378
NSN
5961-01-380-6378
MFG
BAE SYSTEMS CONTROLS INC.
Description
INCLOSURE MATERIAL: GLASS
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.5 MAXIMUM FORWARD VOLTAGE, PEAK AND 18.9 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
26543-0150
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013806711
NSN
5961-01-380-6711
26543-0150
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013806711
NSN
5961-01-380-6711
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
INCLOSURE MATERIAL: CERAMIC
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
9380655
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013806711
NSN
5961-01-380-6711
9380655
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013806711
NSN
5961-01-380-6711
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
INCLOSURE MATERIAL: CERAMIC
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
RBTN6060N7
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013806711
NSN
5961-01-380-6711
RBTN6060N7
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013806711
NSN
5961-01-380-6711
MFG
SUPERTEX INC.
Description
INCLOSURE MATERIAL: CERAMIC
TERMINAL TYPE AND QUANTITY: 14 PIN
Related Searches:
JANTXV1N4472
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013806719
NSN
5961-01-380-6719
JANTXV1N4472
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013806719
NSN
5961-01-380-6719
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N4472
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/406
OVERALL LENGTH: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.2 MAXIMUM REGULATOR VOLTAGE, DC
Related Searches:
27516-0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013806989
NSN
5961-01-380-6989
27516-0001
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013806989
NSN
5961-01-380-6989
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 19397
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 27516-0001
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 19397-27516 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
S560
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013806989
NSN
5961-01-380-6989
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
CURRENT RATING PER CHARACTERISTIC: 0.10 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 19397
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 27516-0001
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 19397-27516 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
4030012-1
TRANSISTOR
NSN, MFG P/N
5961013806994
NSN
5961-01-380-6994
MFG
MCDONNELL DOUGLAS CORP MCDONNELL DOUGLAS AEROSPACE OPNS WEST
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 24.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
H00271-7
TRANSISTOR
NSN, MFG P/N
5961013806994
NSN
5961-01-380-6994
MFG
SUPERTEX INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 24.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
VQ1001P
TRANSISTOR
NSN, MFG P/N
5961013806994
NSN
5961-01-380-6994
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 24.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
4-374-809-01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013807216
NSN
5961-01-380-7216
4-374-809-01
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013807216
NSN
5961-01-380-7216
MFG
SONY ELECTRONICS INC
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
4-337-424-00
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013807217
NSN
5961-01-380-7217
4-337-424-00
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013807217
NSN
5961-01-380-7217
MFG
SONY ELECTRONICS INC
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
1127320666
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013807284
NSN
5961-01-380-7284
1127320666
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013807284
NSN
5961-01-380-7284
MFG
BOSCH ROBERT CORP
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 65.00 AMPERES FORWARD CURRENT, DC
Related Searches:
606-0040-901
TRANSISTOR
NSN, MFG P/N
5961013807492
NSN
5961-01-380-7492
MFG
SEISMIC ENGINEERING CO
Description
TRANSISTOR
Related Searches:
RFM25N06
TRANSISTOR
NSN, MFG P/N
5961013807492
NSN
5961-01-380-7492
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
A3132211-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013807536
NSN
5961-01-380-7536
A3132211-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013807536
NSN
5961-01-380-7536
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
CAPACITANCE RATING IN PICOFARADS: 78.0 MINIMUM AND 86.0 MAXIMUM
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.120 INCHES MINIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3132211 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
C42-1000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013807536
NSN
5961-01-380-7536
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CAPACITANCE RATING IN PICOFARADS: 78.0 MINIMUM AND 86.0 MAXIMUM
INCLOSURE MATERIAL: CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL DIAMETER: 0.120 INCHES MINIMUM
OVERALL LENGTH: 0.260 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.018 INCHES MINIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 80063-A3132211 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS
