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5961-00-539-3103

20 Products

2N4092

TRANSISTOR

NSN, MFG P/N

5961005393103

NSN

5961-00-539-3103

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2N4092

TRANSISTOR

NSN, MFG P/N

5961005393103

NSN

5961-00-539-3103

MFG

CRYSTALONICS INC.

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4092
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-431
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/431 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500

932133-1

TRANSISTOR

NSN, MFG P/N

5961005393103

NSN

5961-00-539-3103

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932133-1

TRANSISTOR

NSN, MFG P/N

5961005393103

NSN

5961-00-539-3103

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4092
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-431
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/431 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500

JAN2N4092

TRANSISTOR

NSN, MFG P/N

5961005393103

NSN

5961-00-539-3103

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JAN2N4092

TRANSISTOR

NSN, MFG P/N

5961005393103

NSN

5961-00-539-3103

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4092
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MILS19500-431
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/431 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500

40408

TRANSISTOR

NSN, MFG P/N

5961005393200

NSN

5961-00-539-3200

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40408

TRANSISTOR

NSN, MFG P/N

5961005393200

NSN

5961-00-539-3200

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

40408L

TRANSISTOR

NSN, MFG P/N

5961005393200

NSN

5961-00-539-3200

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40408L

TRANSISTOR

NSN, MFG P/N

5961005393200

NSN

5961-00-539-3200

MFG

SEMICONDUCTOR TECHNOLOGY INC DBA S T I

Description

CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 90.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN

MA43637

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393222

NSN

5961-00-539-3222

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MA43637

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393222

NSN

5961-00-539-3222

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

UX43637

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393222

NSN

5961-00-539-3222

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UX43637

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393222

NSN

5961-00-539-3222

MFG

SEMI-GENERAL INC .

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

10088C208-101

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

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10088C208-101

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

MFG

LOCKHEED MARTIN CORPORATION DBA LM AERONAUTICS COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 600.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 12.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 0L1E5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 10088C208-101-92685
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 42.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 92685-10088C208 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

10088C208-101-92685

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

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10088C208-101-92685

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 600.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 12.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 0L1E5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 10088C208-101-92685
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 42.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 92685-10088C208 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

66986

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

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66986

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

MFG

RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 600.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 12.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 0L1E5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 10088C208-101-92685
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 42.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 92685-10088C208 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

SES 485

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

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SES 485

SEMICONDUCTOR DEVICE,THYRISTOR

NSN, MFG P/N

5961005393241

NSN

5961-00-539-3241

MFG

SEMITRONICS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 600.00 AMPERES MAXIMUM PEAK ON-STATE CURRENT, NONREPETITIVE AND 12.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 0L1E5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 110.0 DEG CELSIUS CASE
MFR SOURCE CONTROLLING REFERENCE: 10088C208-101-92685
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.551 INCHES MINIMUM AND 0.557 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 42.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
TEST DATA DOCUMENT: 92685-10088C208 DRAWING
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE

534314-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

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534314-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

MFG

RAYTHEON COMPANY

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.065 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, AVERAGE

A2X2323

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

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A2X2323

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.065 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, AVERAGE

MD0213

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

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MD0213

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.065 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, AVERAGE

MX3819

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

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MX3819

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

MFG

AEROFLEX / METELICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.065 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, AVERAGE

QSCH-3802

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

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QSCH-3802

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.065 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, AVERAGE

UX3802

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

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UX3802

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961005393439

NSN

5961-00-539-3439

MFG

SEMI-GENERAL INC .

Description

CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.121 INCHES NOMINAL
OVERALL LENGTH: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.065 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 FERRULE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.7 MAXIMUM FORWARD VOLTAGE, AVERAGE

652-829

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005393897

NSN

5961-00-539-3897

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652-829

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005393897

NSN

5961-00-539-3897

MFG

MICRO USPD INC

Description

OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 0.970 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TURRET

M235A151-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005393897

NSN

5961-00-539-3897

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M235A151-2

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961005393897

NSN

5961-00-539-3897

MFG

INSTRUMENT SYSTEMS CORP

Description

OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 0.970 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TURRET

EDCQ16-1-4J

TRANSISTOR

NSN, MFG P/N

5961005393904

NSN

5961-00-539-3904

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EDCQ16-1-4J

TRANSISTOR

NSN, MFG P/N

5961005393904

NSN

5961-00-539-3904

MFG

ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC

Description

DESIGN CONTROL REFERENCE: EDCQ16-1-4J
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 08748
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: