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5961-00-340-9394

20 Products

932142-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

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932142-1

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 932142-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 06481
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SC3BA4F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003397660

NSN

5961-00-339-7660

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SC3BA4F

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961003397660

NSN

5961-00-339-7660

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

MATERIAL: SILICON
OVERALL HEIGHT: 0.420 INCHES NOMINAL
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPECIAL FEATURES: ALUMINUM CASE; 5 LUG TYPE TERMINALS

152-0409-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

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152-0409-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12000.0 MAXIMUM REVERSE VOLTAGE, PEAK

1901-0652

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

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1901-0652

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

MFG

HEWLETT PACKARD CO

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12000.0 MAXIMUM REVERSE VOLTAGE, PEAK

CX149

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

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CX149

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

MFG

UNITRODE CORP HIGH VOLTAGE DEVICES INC

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12000.0 MAXIMUM REVERSE VOLTAGE, PEAK

VG12X

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

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VG12X

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003397773

NSN

5961-00-339-7773

MFG

L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.160 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12000.0 MAXIMUM REVERSE VOLTAGE, PEAK

MA4060A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003399376

NSN

5961-00-339-9376

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MA4060A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003399376

NSN

5961-00-339-9376

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

DESIGN CONTROL REFERENCE: MA4060A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 96341
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

532213040124

TRANSISTOR

NSN, MFG P/N

5961003400054

NSN

5961-00-340-0054

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532213040124

TRANSISTOR

NSN, MFG P/N

5961003400054

NSN

5961-00-340-0054

MFG

PHILIPS ELECTRONICS NEDERLAND BV

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 9330-283-40112
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

9330-283-40112

TRANSISTOR

NSN, MFG P/N

5961003400054

NSN

5961-00-340-0054

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9330-283-40112

TRANSISTOR

NSN, MFG P/N

5961003400054

NSN

5961-00-340-0054

MFG

COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 9330-283-40112
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

BSX59

TRANSISTOR

NSN, MFG P/N

5961003400054

NSN

5961-00-340-0054

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BSX59

TRANSISTOR

NSN, MFG P/N

5961003400054

NSN

5961-00-340-0054

MFG

BRITISH SAROZAL LTD

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 9330-283-40112
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN

209021000

TRANSISTOR

NSN, MFG P/N

5961003401613

NSN

5961-00-340-1613

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209021000

TRANSISTOR

NSN, MFG P/N

5961003401613

NSN

5961-00-340-1613

MFG

TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD

Description

DESIGN CONTROL REFERENCE: 209021000
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.390 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 6.600 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2SC627

TRANSISTOR

NSN, MFG P/N

5961003401613

NSN

5961-00-340-1613

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2SC627

TRANSISTOR

NSN, MFG P/N

5961003401613

NSN

5961-00-340-1613

MFG

FUJITSU LTD

Description

DESIGN CONTROL REFERENCE: 209021000
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.390 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 6.600 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

S0555-209021000

TRANSISTOR

NSN, MFG P/N

5961003401613

NSN

5961-00-340-1613

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S0555-209021000

TRANSISTOR

NSN, MFG P/N

5961003401613

NSN

5961-00-340-1613

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION

Description

DESIGN CONTROL REFERENCE: 209021000
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 9.390 MILLIMETERS MAXIMUM
OVERALL HEIGHT: 6.600 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

T9G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003402973

NSN

5961-00-340-2973

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T9G

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961003402973

NSN

5961-00-340-2973

MFG

ENTRON INDUSTRIES LIMITED PARTNERSHIP DBA ENTRON INDUSTRIES PROPERTY DIV

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS AMBIENT AIR
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL LENGTH: 1.500 INCHES MAXIMUM

SA2480

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

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SA2480

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 932142-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 06481
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

SQH1333

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

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SQH1333

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 932142-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 06481
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

STQ1013

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

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STQ1013

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961003409394

NSN

5961-00-340-9394

MFG

SILICON TRANSISTOR CORP SUB OF BBF INC

Description

COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
DESIGN CONTROL REFERENCE: 932142-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
MANUFACTURERS CODE: 06481
OVERALL LENGTH: 0.275 INCHES NOMINAL
OVERALL WIDTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

2N3720

TRANSISTOR

NSN, MFG P/N

5961003409407

NSN

5961-00-340-9407

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2N3720

TRANSISTOR

NSN, MFG P/N

5961003409407

NSN

5961-00-340-9407

MFG

NATIONAL SEMICONDUCTOR CORP

Description

DESIGN CONTROL REFERENCE: 932144-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06481
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

932144-1

TRANSISTOR

NSN, MFG P/N

5961003409407

NSN

5961-00-340-9407

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932144-1

TRANSISTOR

NSN, MFG P/N

5961003409407

NSN

5961-00-340-9407

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

DESIGN CONTROL REFERENCE: 932144-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06481
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

S19916

TRANSISTOR

NSN, MFG P/N

5961003409407

NSN

5961-00-340-9407

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S19916

TRANSISTOR

NSN, MFG P/N

5961003409407

NSN

5961-00-340-9407

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

DESIGN CONTROL REFERENCE: 932144-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 06481
OVERALL DIAMETER: 0.290 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.200 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA: