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5961-01-346-3958
20 Products
968C992-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013463958
NSN
5961-01-346-3958
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: HARRIER GR5
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MX0912B350YS
TRANSISTOR
NSN, MFG P/N
5961013463957
NSN
5961-01-346-3957
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: N/FRN-43 & 45
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.236 INCHES NOMINAL
OVERALL LENGTH: 0.905 INCHES NOMINAL
OVERALL WIDTH: 0.387 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 WATTS MINIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MINIMUM BREAKDOWN VOLTAGE, DC
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968C993-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013463959
NSN
5961-01-346-3959
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: HARRIER GR5
Related Searches:
6419986-1
TRANSISTOR
NSN, MFG P/N
5961013464155
NSN
5961-01-346-4155
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.8 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JANTX2N2222A TRANSISTOR SUPPLIED WITH ADAPTER,PLUG P/N 2439331-3; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.5000 INCHES MINIMUM AND 0.750 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACT
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JAN1N5538B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013465103
NSN
5961-01-346-5103
JAN1N5538B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013465103
NSN
5961-01-346-5103
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5538B-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-14
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/437
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/437 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIM
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131016
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013465153
NSN
5961-01-346-5153
131016
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013465153
NSN
5961-01-346-5153
MFG
FLUKE CORPORATION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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5322 130 32031
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013465153
NSN
5961-01-346-5153
5322 130 32031
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013465153
NSN
5961-01-346-5153
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
SKB2/02L5A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013465153
NSN
5961-01-346-5153
SKB2/02L5A
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013465153
NSN
5961-01-346-5153
MFG
SEMIKRON INTL INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
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RD-5-4216-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466071
NSN
5961-01-346-6071
RD-5-4216-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466071
NSN
5961-01-346-6071
MFG
RED DOT CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BU406D
TRANSISTOR
NSN, MFG P/N
5961013466282
NSN
5961-01-346-6282
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SPECIFICATION/STANDARD DATA: 04713-BU406D MANUFACTURERS STANDARD
Related Searches:
1594523-2
TRANSISTOR
NSN, MFG P/N
5961013466803
NSN
5961-01-346-6803
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
TRANSISTOR
Related Searches:
1594522-1
TRANSISTOR
NSN, MFG P/N
5961013466804
NSN
5961-01-346-6804
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
TRANSISTOR
Related Searches:
1594522-2
TRANSISTOR
NSN, MFG P/N
5961013466805
NSN
5961-01-346-6805
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-TUCSON
Description
TRANSISTOR
Related Searches:
1855-0527
TRANSISTOR
NSN, MFG P/N
5961013466806
NSN
5961-01-346-6806
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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28461-05105
TRANSISTOR
NSN, MFG P/N
5961013466806
NSN
5961-01-346-6806
MFG
SELEX GALILEO LTD
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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MTM2P50
TRANSISTOR
NSN, MFG P/N
5961013466806
NSN
5961-01-346-6806
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM DRAIN CURRENT AND 8.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 500.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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GZ74318A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466807
NSN
5961-01-346-6807
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
N04836
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466807
NSN
5961-01-346-6807
MFG
MBDA UK LTD
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PSW-1211
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466808
NSN
5961-01-346-6808
MFG
REACTEL INC.
Description
SEMICONDUCTOR DEVICE,DIODE
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SD10WEE/15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466809
NSN
5961-01-346-6809
SD10WEE/15
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013466809
NSN
5961-01-346-6809
MFG
MICRONETICS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
