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5961-00-225-4643

20 Products

10015610-025

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002254643

NSN

5961-00-225-4643

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10015610-025

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002254643

NSN

5961-00-225-4643

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-12
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.193 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.313 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

5082-2303

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002253412

NSN

5961-00-225-3412

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5082-2303

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002253412

NSN

5961-00-225-3412

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WASP CLASS LHD; AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; TICONDEROGA CLASS CG (47); KIDD CLASS DDG; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; TARAWA CLASS LHA; FORRESTAL CLASS LHA; ARLEIGH BURKE CLASS DDG; VIRGINIA CLASS CGN (41)
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL

G390206S1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002253412

NSN

5961-00-225-3412

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G390206S1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002253412

NSN

5961-00-225-3412

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: WASP CLASS LHD; AUSTIN SHIP CLASS LPD-4 AMPHIBIOUS TRANSPORT DOCKS; TICONDEROGA CLASS CG (47); KIDD CLASS DDG; SPRUANCE CLASS DD (963); NIMITZ CLASS CVN; TARAWA CLASS LHA; FORRESTAL CLASS LHA; ARLEIGH BURKE CLASS DDG; VIRGINIA CLASS CGN (41)
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.068 INCHES MINIMUM AND 0.076 INCHES MAXIMUM
OVERALL LENGTH: 0.150 INCHES MINIMUM AND 0.170 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL

1564-2770

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961002253424

NSN

5961-00-225-3424

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1564-2770

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961002253424

NSN

5961-00-225-3424

MFG

GENRAD INC

Description

DESIGN CONTROL REFERENCE: 1564-2770
MAJOR COMPONENTS: PRINTED WIRING BOARD 1; TRANSISTOR 13
MANUFACTURERS CODE: 24655
MOUNTING CONFIGURATION: FOUR 0.169 IN. DIA. MTG. HOLES SPACED ON 2.625 IN. BY 5.625 IN. MTG. CENTERS
OVERALL HEIGHT: 0.469 INCHES NOMINAL
OVERALL LENGTH: 6.000 INCHES NOMINAL
OVERALL WIDTH: 3.000 INCHES NOMINAL
THE MANUFACTURERS DATA:

131503

TRANSISTOR

NSN, MFG P/N

5961002253941

NSN

5961-00-225-3941

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131503

TRANSISTOR

NSN, MFG P/N

5961002253941

NSN

5961-00-225-3941

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

DESIGN CONTROL REFERENCE: 131503
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 06481
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:

341C815G01

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002254129

NSN

5961-00-225-4129

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341C815G01

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961002254129

NSN

5961-00-225-4129

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

COMPONENT FUNCTION RELATIONSHIP: UNMATCHED
COMPONENT NAME AND QUANTITY: 12 SEMICONDUCTOR DEVICE DIODE
DESIGN CONTROL REFERENCE: 341C815G01
MANUFACTURERS CODE: 97942
SPECIAL FEATURES: JAN CONTROLLING AGENCY
THE MANUFACTURERS DATA:

1N2038-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002254643

NSN

5961-00-225-4643

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1N2038-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002254643

NSN

5961-00-225-4643

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-12
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.193 INCHES NOMINAL
OVERALL LENGTH: 0.350 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.313 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.7 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -10.0 TO 10.0

FBL00-053

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002256773

NSN

5961-00-225-6773

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FBL00-053

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002256773

NSN

5961-00-225-6773

MFG

VEECO INSTRUMENTS INC LAMBDA DIV

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS AND 100.0 MAXIMUM REVERSE VOLTAGE, PEAK

20-00386-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002256785

NSN

5961-00-225-6785

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20-00386-000

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002256785

NSN

5961-00-225-6785

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES FORWARD CURRENT, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 00724
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 20-00386-000
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -54.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MINIMUM
OVERALL LENGTH: 2.000 INCHES MINIMUM
OVERALL WIDTH: 1.125 INCHES MINIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 WIRE LEAD

F861-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002256785

NSN

5961-00-225-6785

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F861-1

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961002256785

NSN

5961-00-225-6785

MFG

SOLITRON DEVICES INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES FORWARD CURRENT, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 00724
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: 20-00386-000
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -54.0 TO 75.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES MINIMUM
OVERALL LENGTH: 2.000 INCHES MINIMUM
OVERALL WIDTH: 1.125 INCHES MINIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 WIRE LEAD

1-135-008

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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1-135-008

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

RAYMOND CORPORATION THE

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

10D2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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10D2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

10D6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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10D6

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

INTERNATIONAL RECTIFIER CO GB LTD

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

602809

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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602809

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

ULTRA ELECTRONICS LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

7351533

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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7351533

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

ITW LIMITED T/A HOUCHIN AEROSPACE

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

B52099

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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B52099

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

MBDA UK LTD

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

BBZ8282

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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BBZ8282

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

GIAT INDUSTRIES CENTRE DE TARBES

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

CV10859

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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CV10859

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

MINISTRY OF DEFENCE PROCUREMENT EXEC UTIVE

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

M668

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

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M668

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002258390

NSN

5961-00-225-8390

MFG

MINARIK CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.150 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK

2N1076

TRANSISTOR

NSN, MFG P/N

5961002258544

NSN

5961-00-225-8544

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2N1076

TRANSISTOR

NSN, MFG P/N

5961002258544

NSN

5961-00-225-8544

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN