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5961-01-422-4818
20 Products
2037AS928-01
TRANSISTOR
NSN, MFG P/N
5961014224818
NSN
5961-01-422-4818
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM ON-STATE DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: 6130-01-421-6360
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 230.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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345-264-036
TRANSISTOR
NSN, MFG P/N
5961014224818
NSN
5961-01-422-4818
MFG
INTERSTATE ELECTRONICS CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM ON-STATE DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: 6130-01-421-6360
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 230.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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APT5025AN
TRANSISTOR
NSN, MFG P/N
5961014224818
NSN
5961-01-422-4818
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM ON-STATE DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: 6130-01-421-6360
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.540 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 230.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014224891
NSN
5961-01-422-4891
019-006919-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014224891
NSN
5961-01-422-4891
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: ZENER DIODES BRAZED CATHODE TO CATHODE
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REGULATOR VOLTAGE, DC ALL SEMICONDUCTOR
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014224891
NSN
5961-01-422-4891
UDZ5818
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014224891
NSN
5961-01-422-4891
MFG
MICRO USPD INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: CERAMIC AND METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 2.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
SPECIAL FEATURES: ZENER DIODES BRAZED CATHODE TO CATHODE
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 18.0 MAXIMUM REGULATOR VOLTAGE, DC ALL SEMICONDUCTOR
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356A1450P23
TRANSISTOR
NSN, MFG P/N
5961014224900
NSN
5961-01-422-4900
MFG
BAE SYSTEMS CONTROLS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: ARC-222
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 0.268 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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381509-1
TRANSISTOR
NSN, MFG P/N
5961014224900
NSN
5961-01-422-4900
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: ARC-222
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 0.268 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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IRFR9210
TRANSISTOR
NSN, MFG P/N
5961014224900
NSN
5961-01-422-4900
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
III END ITEM IDENTIFICATION: ARC-222
INCLOSURE MATERIAL: PLASTIC AND METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.096 INCHES MAXIMUM
OVERALL LENGTH: 0.410 INCHES MAXIMUM
OVERALL WIDTH: 0.268 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
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381481-1
TRANSISTOR
NSN, MFG P/N
5961014226528
NSN
5961-01-422-6528
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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TRANSISTOR
NSN, MFG P/N
5961014226528
NSN
5961-01-422-6528
MFG
INTERFET CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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TRANSISTOR
NSN, MFG P/N
5961014226528
NSN
5961-01-422-6528
MFG
CALOGIC LLC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.098 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381481 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 NOMINAL BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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647468-1
TRANSISTOR
NSN, MFG P/N
5961014226529
NSN
5961-01-422-6529
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.061 INCHES MAXIMUM
OVERALL LENGTH: 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.103 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-647468 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961014226529
NSN
5961-01-422-6529
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.061 INCHES MAXIMUM
OVERALL LENGTH: 0.119 INCHES MAXIMUM
OVERALL WIDTH: 0.103 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-647468 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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381611-1
TRANSISTOR
NSN, MFG P/N
5961014226532
NSN
5961-01-422-6532
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: -10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.099 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381611 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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TRANSISTOR
NSN, MFG P/N
5961014226532
NSN
5961-01-422-6532
MFG
INTERFET CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: -10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.044 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.099 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381611 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014226533
NSN
5961-01-422-6533
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
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NSN, MFG P/N
5961014226533
NSN
5961-01-422-6533
MFG
COMPENSATED DEVICES INC
Description
SEMICONDUCTOR DEVICE,DIODE
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014226538
NSN
5961-01-422-6538
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.098 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381530 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014226538
NSN
5961-01-422-6538
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014226538
NSN
5961-01-422-6538
MFG
SKYWORKS SOLUTIONS INC.
Description
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.098 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
TEST DATA DOCUMENT: 37695-381530 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MINIMUM BREAKDOWN VOLTAGE, DC
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014226847
NSN
5961-01-422-6847
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 43.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
